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F

Filippo Giannazzo

Institute for Microelectronics and Microsystems

51H-index
453Paper Count
9.3KCitation Count
Published Papers 158
Publication Date
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AVA-MAPbI3 Cap-and-Root Islands on Mesoporous TiO2 Toward Neutral-Color Semi-Transparent Perovskite Solar Cells in Agrivoltaics
errAdvanced Energy and Sustainability Research
IF5.7
err2026-09-27
err0
errOAAI
errSalvatore Valastro; Gaetano Calogero; Emanuele Smecca; Giovanni Mannino; Valentina Arena; Ioannis Deretzis; Corrado Bongiorno; Salvatore Ethan Panasci; Filippo Giannazzo; Miriam Distefano; Giovanni Avola; Ezio Riggi; Antonino La Magna; Alessandra Alberti
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Electrical Properties and Interfacial Strain in Thermally Oxidized 4H-SiC MOS Structures Under Different Post-Oxidation Annealing
errAdvanced Electronic Materials
IF5.3
err2026-08-30
err0
errOAAI
errFabrizio Roccaforte; Salvatore Ethan Panasci; Valerio Votadoro; Salvatore Di Franco; Marilena Vivona; Simone Milazzo; Marco Zignale; Filippo Giannazzo; Béla Pécz; Patrick Fiorenza
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Electrical properties of Schottky diodes on ammonothermal and hydride vapor phase epitaxy GaN substrates
errMaterials Science in Semiconductor Processing
IF4.6
err2026-08-22
err0
errOAAI
errG. Greco; S. Milazzo; P. Rocha; T.S. Tlemcani; P. Fiorenza; S.E. Panasci; F. Bartoli; E. Frayssinet; F. Giannazzo; D. Alquier; Y. Cordier; M. Bockowski; F. Roccaforte
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Insights into ALD Growth of Al-Based Dielectric Stack on 4H-SiC
errNanomaterials
IF4.3
err2026-07-27
err0
errOAAI
errBruno Galizia; Emanuela Schilirò; Patrick Fiorenza; Filippo Giannazzo; Bela Pecz; Zsolt Fogarassy; Fabrizio Roccaforte; Raffaella Lo Nigro
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Structural Properties and Energy Band Alignment of Crystalline AlN Grown by Atomic Layer Deposition on Epitaxial Graphene
errNanomaterials
IF4.3
err2026-05-24
err0
errOAAI
errEmanuela Schilirò; Salvatore Ethan Panasci; Raffaella Lo Nigro; Fabrizio Roccaforte; Blagoy Blagoev; Vladimir Mehandzhiev; Borislava Georgieva; Ivalina Avramova; Rositsa Yakimova; Milena Beshkova; Filippo Giannazzo
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Energy Band Alignment and Electro-Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN
errAdvanced Materials Interfaces
IF4.4
err2026-05-04
err0
errOAAI
errSalvatore Ethan Panasci; Emanuela Schilirò; Giuseppe Greco; Patrick Fiorenza; Fabrizio Roccaforte; Fiorenza Esposito; Igor Píš; Federica Bondino; Antonino Madonia; Marco Cannas; Simonpietro Agnello; Luca Seravalli; Filippo Giannazzo
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Scalable Dielectrics Technology for 2D Materials Electronics
errAdvanced Electronic Materials
IF5.3
err2025-10-31
err0
errOAAI
errEmanuela Schilirò; Salvatore Ethan Panasci; Raffaella Lo Nigro; Fabrizio Roccaforte; Filippo Giannazzo
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Impact of the Schottky Barrier and Contact-Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors
errSmall Science
IF8.3
err2025-09-28
err0
errOAAI
errSalvatore Ethan Panasci; Emanuela Schilirò; Giuseppe Greco; Patrick Fiorenza; Marilena Vivona; Salvatore Di Franco; Fabrizio Roccaforte; Fiorenza Esposito; Matteo Bosi; Giovanni Attolini; Igor Píš; Federica Bondino; Maddalena Pedio; Antonino Madonia; Marco Cannas; Simonpietro Agnello; Luca Seravalli; Filippo Giannazzo
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2D Materials: Processing and applications
errMaterials Science in Semiconductor Processing
IF4.6
err2025-07-30
err0
PREAI
errFilippo Giannazzo; Luigi Colombo; Fei Hui
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Thermal annealing effects on the electrical and structural properties of Mo Schottky contacts to n-type 4H-SiC
errMaterials Science in Semiconductor Processing
IF4.6
err2025-06-19
err0
errOAAI
errM. Vivona; I. Streicher; L. Kirste; A.M. Mio; G. Nicotra; P. Fiorenza; F. Giannazzo; F. Roccaforte
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Scalable growth of optically uniform MoWS2 alloys by sulfurization of ultrathin Mo/W stacks
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2025-05-30
err0
errOAAI
errPanasci, Salvatore Ethan; Schiliro, Emanuela; Koos, Antal; Kutlu, Tayfun; Sahin, Hasan; Roccaforte, Fabrizio; Pecz, Bela; Giannazzo, Filippo
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Understanding the impact of extended crystalline defects on 4H-SiC power MOSFETs by multiscale correlative electrical, optical and thermal characterizations
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2025-05-06
err0
errOAAI
errFiorenza, P.; Zignale, M.; Maira, G.; Fontana, E.; Bottari, C.; Adamo, S.; Carbone, B.; Alessandrino, M. S.; Russo, A.; Panasci, S. E.; Vivona, M.; Giannazzo, F.; Roccaforte, F.
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Mild Temperature Thermal Treatments of Gold-Exfoliated Monolayer MoS2
errNANOMATERIALS
IF4.3
err2025-01-22
err0
errOAAI
errSangiorgi, Emanuele; Madonia, Antonino; Laurella, Gianmarco; Panasci, Salvatore Ethan; Schiliro, Emanuela; Giannazzo, Filippo; Pis, Igor; Bondino, Federica; Radnoczi, Gyorgy Zoltan; Kovacs-Kis, Viktoria; Pecz, Bela; Buscarino, Gianpiero; Gelardi, Franco Mario; Cannas, Marco; Agnello, Simonpietro
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Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures
errAPPLIED SURFACE SCIENCE
IF6.9
err2025-01-01
err1
errOAAI
errMilazzo, Simone; Greco, Giuseppe; Di Franco, Salvatore; Fiorenza, Patrick; Giannazzo, Filippo; Bongiorno, Corrado; Gervasi, Leonardo; Mirabella, Salvatore; Iucolano, Ferdinando; Roccaforte, Fabrizio
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Gold-Assisted Exfoliation of Large-Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications
errADVANCED FUNCTIONAL MATERIALS
IF19
err2024-11-22
err0
errOAAI
errPanasci, Salvatore Ethan; Schiliro, Emanuela; Roccaforte, Fabrizio; Giannazzo, Filippo
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Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-06-11
err2
errOAAI
errPanasci, Salvatore Ethan; Schiliro, Emanuela; Koos, Antal; Roccaforte, Fabrizio; Cannas, Marco; Agnello, Simonpietro; Pecz, Bela; Giannazzo, Filippo
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Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2024-05-01
err3
errOAAI
errGiannazzo, Filippo; Panasci, Salvatore Ethan; Schiliro, Emanuela; Koos, Antal; Pecz, Bela
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Schottky contacts on sulfurized silicon carbide (4H-SiC) surface
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-03-04
err1
errOAAI
errRoccaforte, Fabrizio; Vivona, Marilena; Panasci, Salvatore Ethan; Greco, Giuseppe; Fiorenza, Patrick; Sulyok, Attila; Koos, Antal; Pecz, Bela; Giannazzo, Filippo
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Interface Properties of MoS2 van der Waals Heterojunctions with GaN
errNANOMATERIALS
IF4.3
err2024-01-05
err8
errOAAI
errPanasci, Salvatore Ethan; Deretzis, Ioannis; Schiliro, Emanuela; La Magna, Antonino; Roccaforte, Fabrizio; Koos, Antal; Nemeth, Miklos; Pecz, Bela; Cannas, Marco; Agnello, Simonpietro; Giannazzo, Filippo
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Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2024-01-01
err3
errOAAI
errFiorenza, Patrick; Zignale, Marco; Camalleri, Marco; Scalia, Laura; Zanetti, Edoardo; Saggio, Mario; Giannazzo, Filippo; Roccaforte, Fabrizio
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Research Directions

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Co-authors
Cooperation Journals
D
Dante Gatteschi
H-index: 103 · Papers: 1.0K
L
Leroy Cronin
H-index: 99 · Papers: 1.4K
A
Andréa Caneschi
H-index: 90 · Papers: 807
A
Aldo Di Carlo
H-index: 81 · Papers: 1.1K
T
Tsutomu Miyasaka
H-index: 75 · Papers: 413
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