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Dirk J. Wouters

rwth aachen university aachen

46H-index
347Paper Count
7.5KCitation Count
Published Papers 48
Publication Date
Volume Contraction Upon Resistive Switching in Cr-Doped V2O3 as a Key Mechanism for Mottronics Applications
err2025-10-13
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errOAAI
errDanylo Babich; Julien Tranchant; Coline Adda; Benoit Corraze; Marie-Paule Besland; Peter Warnicke; Daniel Bedau; Patricia Bertoncini; Jean-Yves Mevellec; Bernard Humbert; Jonathan Rupp; Tyler Hennen; Dirk Wouters; Roger Llopis; Laurent Cario; Etienne Janod
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Exploiting Read Noise of Filamentary VCM ReRAM for Robust TRNG
err2025-09-25
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errOAAI
errKristoffer Schnieders; Peixuan Bai; Yongmin Wang; Tim Kempen; Alexandros Sarantopoulos; Dirk Wouters; Vikas Rana; Regina Dittmann; Rainer Waser; Stephan Menzel; Stefan Wiefels
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Origin of the inhomogeneous nanoscale resistivity in chromium doped V2O3
err2025-05-06
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errOAAI
errMohr, Johannes; Wang, Yudi; Xu, Xiaoyu; Wang, Ruilin; Wouters, Dirk J.; Waser, Rainer; Nag, Joyeeta; Bedau, Daniel
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Electronic vs phononic thermal transport in Cr-doped V2O3 thin films across the Mott transition
err2024-09-30
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PREAI
errMohr, Johannes; Aryana, Kiumars; Islam, Md. Rafiqul; Wouters, Dirk J.; Waser, Rainer; Hopkins, Patrick E.; Nag, Joyeeta; Bedau, Daniel
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Accurate evaluation method for HRS retention of VCM ReRAM
err2024-03-08
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errOAAI
errKopperberg, N.; Wouters, D. J.; Waser, R.; Menzel, S.; Wiefels, S.
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Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices
err2024-01-01
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errOAAI
errStasner, Pascal; Kopperberg, Nils; Schnieders, Kristoffer; Hennen, Tyler; Wiefels, Stefan; Menzel, Stephan; Waser, Rainer; Wouters, Dirk J.
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Improved Arithmetic Performance by Combining Stateful and Non-Stateful Logic in Resistive Random Access Memory 1T-1R Crossbars
err2023-12-27
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errOAAI
errBrackmann, Leon; Ziegler, Tobias; Jafari, Atousa; Wouters, Dirk J.; Tahoori, Mehdi B.; Menzel, Stephan
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System model of neuromorphic sequence learning on a memristive crossbar array
err2023-05-02
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errOAAI
errSiegel, Sebastian; Bouhadjar, Younes; Tetzlaff, Tom; Waser, Rainer; Dittmann, Regina; Wouters, Dirk J.
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A high throughput generative vector autoregression model for stochastic synapses
err2022-08-18
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errOAAI
errHennen, Tyler; Elias, Alexander; Nodin, Jean-Francois; Molas, Gabriel; Waser, Rainer; Wouters, Dirk J. J.; Bedau, Daniel
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Reliability aspects of binary vector-matrix-multiplications using ReRAM devices
err2022-06-22
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errOAAI
errBengel, Christopher; Mohr, Johannes; Wiefels, Stefan; Singh, Abhairaj; Gebregiorgis, Anteneh; Bishnoi, Rajendra; Hamdioui, Said; Waser, Rainer; Wouters, Dirk; Menzel, Stephan
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Endurance of 2 Mbit Based BEOL Integrated ReRAM
err2022-01-01
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errOAAI
errKopperberg, Nils; Wiefels, Stefan; Hofmann, Karl; Otterstedt, Jan; Wouters, Dirk J.; Waser, Rainer; Menzel, Stephan
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In-Memory Binary Vector-Matrix Multiplication Based on Complementary Resistive Switches
err2020-08-17
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errOAAI
errZiegler, Tobias; Waser, Rainer; Wouters, Dirk J.; Menzel, Stephan
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Control of stoichiometry and morphology in polycrystalline V2O3thin films using oxygen buffers
err2020-07-17
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errOAAI
errRupp, Jonathan A. J.; Corraze, Benoit; Besland, Marie-Paule; Cario, Laurent; Tranchant, Julien; Wouters, Dirk J.; Waser, Rainer; Janod, Etienne
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Analyses of a 1-layer neuromorphic network using memristive devices with non-continuous resistance levels
err2019-09-19
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errOAAI
errSiemon, A.; Ferch, S.; Heittmann, A.; Waser, R.; Wouters, D. J.; Menzel, S.
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On the role of the metal oxide/reactive electrode interface during the forming procedure of valence change ReRAM devices
err2019-01-01
err31
PREAI
errKindsmueller, Andreas; Meledin, Alexander; Mayer, Joachim; Waser, Rainer; Wouters, Dirk J.
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Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with x ∼ 1
err2019-01-01
err21
PREAI
errRosario, Carlos M. M.; Thoener, Bo; Schoenhals, Alexander; Menzel, Stephan; Meledin, Alexander; Barradas, Nuno P.; Alves, Eduardo; Mayer, Joachim; Wuttig, Matthias; Waser, Rainer; Sobolev, Nikolai A.; Wouters, Dirk J.
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On the universality of the I-V switching characteristics in non-volatile and volatile resistive switching oxides
err2019-01-01
err21
PREAI
errWouters, Dirk J.; Menzel, Stephan; Rupp, Jonathan A. J.; Hennen, Tyler; Waser, Rainer
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Synaptic and neuromorphic functions: general discussion
err2019-01-01
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errOAAI
errBerg, Alexandra I.; Brivio, Stefano; Brown, Simon; Burr, Geoffrey; Deswal, Sweety; Deuermeier, Jonas; Gale, Ella; Hwang, Hyunsang; Ielmini, Daniele; Indiveri, Giacomo; Kenyon, Anthony J.; Kiazadeh, Asal; Koymen, Itir; Kozicki, Michael; Li, Yang; Mannion, Daniel; Prodromakis, Themis; Ricciardi, Carlo; Siegel, Sebastian; Speckbacher, Maximilian; Valov, Ilia; Wang, Wei; Williams, R. Stanley; Wouters, Dirk; Yang, Yuchao
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Valence change ReRAMs (VCM)-Experiments and modelling: general discussion
err2019-01-01
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errOAAI
errAono, Mazakazu; Baeumer, Christoph; Bartlett, Philip; Brivio, Stefano; Burr, Geoffrey; Burriel, Monica; Carlos, Emanuel; Deswal, Sweety; Deuermeier, Jonas; Dittmann, Regina; Du, Hongchu; Gale, Ella; Hambsch, Sebastian; Hilgenkamp, Hans; Ielmini, Daniele; Kenyon, Anthony J.; Kiazadeh, Asal; Kindsmueller, Andreas; Kissling, Gabriela; Koymen, Itir; Menzel, Stephan; Asesio, Dolors Pla; Prodromakis, Themis; Santamaria, Monica; Shluger, Alexander; Thompson, Damien; Valov, Ilia; Wang, Wei; Waser, Rainer; Williams, R. Stanley; Wrana, Dominik; Wouters, Dirk; Yang, Yuchao; Zaffora, Andrea
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