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Journal of Semiconductor Technology and Science

IF0.8
论文数51
被引数
期刊论文 51
发表时间
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A 5G Millimeter-wave n257 Band CMOS Down-conversion Mixer with Inner-diameter-shared Source Degeneration Inductors5G毫米波n257频段CMOS下变频混频器，具有内径共享的源极退耦电感器
deleteJournal of Semiconductor Technology and Science
IF0.8
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deleteMyung, Jinman; Park, Geonwoo; Kim, Ho; Lee, Suyeon; Nam, Ilku
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Heat Dissipation Improvement Using Plugged Sidewall for Three-dimensional (3D) Package of High-stacked High Bandwidth Memory (HBM)使用封闭侧壁改善高堆叠高带宽内存(HBM)三维(3D)封装的散热性能
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deleteHong, Eun Pyo; Yoon, Sang Won
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Analysis of Non-ideal Ohmic Characteristics in Mg-incorporated P-type GaN ContactsMg掺杂p型GaN接触中的非理想欧姆特性分析
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deleteKim, Nak Hyeon; Kim, Min-Jeoung; Cha, Ho-Young
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ML-Driven Optimization of Standard Cell Performance and Timing in Advanced Nodes机器学习驱动的先进节点标准单元性能与时序优化
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deleteJeong, HyunJoon; Suk, Junha; Kong, Jeong-Taek; Kim, SoYoung
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A Novel Parameter Extraction Technique for Off-state Equivalent Circuit Model of Body-Contact PD-SOI MOSFETs一种用于体接触PD-SOI MOSFETs关态等效电路模型的新型参数提取技术
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deleteYi, Seunghun; Lee, Seonghearn
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Inter-deck-body Architecture to Enhance Erase Speed in 3D NAND Flash Memory层间架构以提升3D NAND闪存擦除速度
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deleteLee, Shihun; Park, Gihong; Sung, Suk-Kang; Kim, Yoon
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A 7.6-GHz Fractional-N Digital PLL with Time Amplifier-based Time-to-digital Converter7.6-GHz分数-N数字锁相环及基于时间放大器的时间-数字转换器
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deleteChoi, Yekwang; Kim, Youngsik; Kim, Shinwoong
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Performance and Reliability Improvement of Double-gate Structure-based Flexible PBTTT Organic Thin-film Transistors基于双栅结构的柔性PBTTT有机薄膜晶体管的性能和可靠性提升
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deleteHong, Ah-Hyun; Choi, Hyungjun; Kim, Kyeungbin; Park, Dong-Wook
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Investigation of Ternary Operation 1T DRAM with Double Quantum Well Structure探究具有双量子阱结构的Ternary Operation 1T DRAM
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deleteLee, Min-Ju; Kim, Seong-Ho; Shin, Ga-Hyun; Park, Jae-Sung; Choi, Woo Young; Cho, Il Hwan
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Effect of Top Electrode Work Function on Switching and Synaptic Characteristics of HfO2/ZnO-based Memristive Device顶部电极功函数对HfO2/ZnO基忆阻器开关和突触特性的影响
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deleteKim, Yu-Bin; Kim, Sung-Ho; Kim, Dong-Min; Yeom, Chae-Min; Gautam, Shivam Kumar; Kim, Yong-Goo; Kwon, Hyuk-Min; Lee, Hi-Deok
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Process Parameter Effects on the Electrical Characteristics of Bottom-gated IGZO TFT Integrated Monolithically on CMOS Circuit在CMOS电路上单片集成的底栅IGZO TFT的电气特性受工艺参数的影响
deleteJournal of Semiconductor Technology and Science
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deleteChi, Seo Yong; Park, Jong Wan; Lee, Hi-Deok; Lee, Wan-Gyu
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Demonstration of Performance Enhancement in Semiconductor Devices Utilizing TiO2-Based High-k Triple-Layer Dielectric利用TiO2基高-k三明治层介质提升半导体器件性能的演示
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deleteKim, Seong Kyum; Hong, Seul Ki
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SCR-Based ESD Protection Device with an Added Metal Discharge Path for 5-V Applications基于SCR的ESD保护器件，附加金属放电路径，适用于5-V应用
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deleteKim, Dong-Hyeon; Oh, Jae-Yoon; Kim, Min-Seo; Jeon, Cheon-Hoo; Kang, Jung-Won; Koo, Yong-Seo
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An Efficient Dual-State ChaCha20 Accelerator for Secure and Real-time CAV Communications高效双态ChaCha20加速器用于安全实时CAV通信
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deleteKwak, Myeongjin; Jeong, Jaewoong; Lee, Tae Hee; Lee, Do Hoon; Kim, Tae-Hyoung; Kim, Yongtae
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Gate Edge Sidewall Integration for Breakdown Voltage Enhancement in GaN HEMTs氮化镓HEMT器件中用于提高击穿电压的栅极边缘侧墙集成技术
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deletePark, Sang Woo; Lee, Jongmin; Kim, Jang Hyun
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Fast and Highly Selective GaN-over-AlGaN Etching with Low Surface Damage快速且高选择性的GaN在AlGaN上刻蚀，表面损伤低
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deleteJang, Kiyoung; Heo, Junseok
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Resistor-BJT-less PTAT Current Generator with Single Threshold MOSFET基于单阈值MOSFET的电阻器和BJT-less PTAT电流发生器
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deleteUhm, Donghyun; Kim, Kwanwoo; Kim, Hojun; Park, Himchan; Yang, Jun-Hyeok; Lim, Jaemyung
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Image Lookup Table Compression Using Scaled Partitioning with Memory Data Compression基于缩放分区与内存数据压缩的图像查找表压缩
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deleteLee, Jeonghun; Lim, Sanghyun; Youn, Seongjo; You, Jaehee
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20Gb/s Energy Efficient and Linearity Enhanced Integrated Summer Latch-based PAM-4 DFE20Gb/s节能且线性度增强的基于集成求和锁存器的PAM-4 DFE
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deleteAn, Seung-Heon; Kang, Jin-Ku
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Implantable Thin and Flexible Neural Electrode with a Plastically Deformable Fixation Element and an Integrated Temperature Transducer可植入的薄型柔性神经电极，带有塑性可变形固定元件和集成温度传感器
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deleteLee, Sieun; Kim, Jong Pal
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