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Semiconductors

IF0.6
论文数82
被引数
期刊论文 82
发表时间
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First-Principles Investigation of Semiconducting d0 Heusler Alloys Li2BaZ (Z = C, Ge, and Si) for Optoelectronic Applications基于第一性原理对用于光电子应用的半导体d0型赫斯勒合金Li2BaZ（Z = C, Ge和Si）的研究
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IF0.6
delete2026-05-01
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PREAI
deleteAmari, Djilali; Rouag, Salah Eddine; Mokhtari, Mohamed; Dahmane, Fethallah; Rached, Habib; Belakhdar, Khalil
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Rashba Effect of Strong-Coupling Bound Polaron in a Triangular Quantum Well强耦合束缚极化子在三角量子阱中的拉什巴效应
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IF0.6
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deleteXiong-Liang
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Hydrogenic Impurity Effect of the Strong-coupling Polaron in Perovskite Parabolic Potential Quantum Wells强耦合极化子中氢杂质效应对钙钛矿抛物势量子阱的影响
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deleteZhang, Hong-Xia; Zhang, Yi-Min; Ma, Xin-Jun; Sun, Yong
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Design and Performance Investigation of a Dual p-GaN Recessed Gate High Electron Mobility Transistors for High Threshold Voltage Applications双p-GaN凹槽栅高电子迁移率晶体管的高阈值电压应用设计与性能研究
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deleteBhattacharjee, H.; Chowdhury, J.; Dey, A.; Meher, Preetisudha
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Simulation Study of Enhancement-Mode HEMTs with Graded AlGaN Barriers and GaN/InGaN Double Quantum Well Caps渐变AlGaN势垒和GaN/InGaN双量子阱帽增强型HEMT的仿真研究
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IF0.6
delete2026-05-01
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deleteLiu, Xiang-Yu; Cai, Li-E; Chen, Yi-Fei; Ma, Zhi-Yu; Feng, Da; Lin, Hai-Feng; Sun, Chuan-Tao; Zai-Jun, Cheng; Hai-Feng, Lin; Zheng, Rong-Sheng
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Investigating the Effect of AlGaN Back Barrier in Buffer Free AlGaN/GaN HEMTs with Stacked HfO2/SiN Passivation for High Frequency Applications研究用于高频应用的堆叠HfO2/SiN钝化缓冲层自由AlGaN/GaN HEMT中AlGaN背势垒的影响
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deleteDadi, Anil Prasad; Prakash, Ellapu Bhanu; Maitra, Vijay; Ghose, Tathagata; Ray, Ashok; Bordoloi, Sushanta
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Optimizing the ABX3 Perovskite/Transport Layer Interface in the Perovskite Solar Cell: Interfacial Layer Selection for Tripartite Heterostructures through Defect Passivation钙钛矿太阳能电池中ABX3钙钛矿/传输层界面的优化：通过缺陷钝化选择三组分异质结构中的界面层
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IF0.6
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deleteThiyagarajan, Bhuvaneswari; Murugan, Kathirvelu
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Optimization of Low-Cost Zinc Sulfide Antireflection Coating by Eco-Friendly Route for Large Area Multi-Crystalline Silicon Solar Cells通过环保路线优化低成本硫化锌减反射涂层，用于大面积多晶硅太阳能电池
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deleteChakraborty, M.; Jana, Sukhendu; Chowdhury, Kunal; Das, Sayan; Gangopadhyay, Utpal
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Influence of Defects on the Electrical Performance of InAlAs/InGaAs Schottky Barrier Diodes缺陷对InAlAs/InGaAs肖特基势垒二极管电性能的影响
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deleteSun, S. X.; Zhai, Z. M.; Chen, L. H.; Mei, H. Y.; Ajayan, J.
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Combined Optical and Quantum Simulation of a Resonant Tunneling Diode Photodetector with an Integrated Microlens结合光学和量子模拟的共振隧穿二极管光电探测器与集成微透镜
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delete2026-04-01
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deleteLabiod, S.; Smaani, B.; Hadef, S.
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Drain Work-Function-Engineered Electrically Doped PNPN Tunnel Field-Effect Transistor for Ambipolar Current Suppression漏极功函数工程化电学掺杂PNPN隧穿场效应晶体管用于双极电流抑制
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deleteXu, Wen-Bin; Liu, Ying; Ting, Tin Tin
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Electron Structure and Optical Properties Tuning of HfNBr/ZrNBr HeterostructuresHfNBr/ZrNBr异质结构的电子结构与光学性能调控
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deleteMa, Yaqiang; Yang, Guoliang; Liu, Ming; Wang, Zhen; Dai, Xianqi
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Thermoelectric Properties of Expanded Graphite: Semiconducting Polymer/Compound Composites膨胀石墨的热电性能：半导体聚合物/化合物复合材料
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deleteRastegaralam, Mina; Carroll, David; Roth, Siegmar; Martynkova, Grazyna Simha
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Exciton States in InGaAsP/InP Core-Shell Quantum Dots under Magnetic Field磁场下InGaAsP/InP核壳量子点的激子态
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deleteHu, Min; Yao, HongYan
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Electrically Injected GeSn Laser with Dual-layer SiN Stressor电注入GeSn激光器与双层SiN应力层
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deleteShen, Yue; Shu, Bin; Wu, Wenqing; Zhu, Bingzhang; Yu, Zhichao; Hu, Huiyong; Miao, Tian; Wang, Liming; Zhang, Ningning
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High-Q Shear Mode ZnO-based Film Bulk Acoustic Resonators with Air Cavity for Liquid-Phase Sensing Applications高Q剪切模式ZnO基薄膜体声波谐振器及其在液相传感应用中的空气腔
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deleteTakuli, Aditya Pratap Singh; Patel, Raju; Majumder, Tanmoy; Adhikari, Manoj Singh; Bansal, Deepak
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AlGaN-based Avalanche Photodiodes with a Graded Al Composition Multiplication Layer基于AlGaN的具有渐变Al组分倍增层的雪崩光电二极管
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deleteHou, Fangzhong; Zhang, Liyao
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Broadband Hybrid Plasmonic Waveguide Modulator based on Graphene-sodium in the Near Infrared Region with Ultra-low Attenuation基于石墨烯-钠的宽带混合等离极化激元波导调制器，在近红外区域具有超低衰减
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IF0.6
delete2026-03-01
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deleteAsadi, Akbar
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Investigation of GaSb (p plus ) Pocket doped GaSb/Si Vertical TFETs for High-Frequency Analog CircuitsGaSb (p plus ) 掺杂 GaSb/Si 垂直TFET在高频模拟电路中的应用研究
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delete2026-03-01
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deleteSathishkumar, M.; Geege, A. Sharon; Samuel, T. S. Arun; Anand, I. Vivek; Ramkumar, K.
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Effect of Al Composition in AlxGa1-xN Barrier on Performance of Gate Field-Plate GaN HEMTs on SiC SubstratesAlxGa1-xN势垒中Al组分对SiC衬底上栅场板GaN HEMT性能的影响
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delete2026-03-01
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deleteSaravanan, M.; Bhuvaneshwari, V.; Rajam, K.; Karthikeyan, S.
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