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Microelectronic Engineering 封面图

Microelectronic Engineering

IF3.1
论文数166
被引数8106
期刊论文 166
发表时间
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Enhancing SRAM design with a novel staggered-gate CFET: A path to area reduction and performance optimization采用新型交错栅CFET提升SRAM设计：实现面积缩减与性能优化的途径
deleteMicroelectronic Engineering
IF3.1
delete2026-10-06
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PREAI
deleteXin Wang; Longyu Sun; Haoyan Liu; Shiqi Cao; Fei Zhao; Yongliang Li
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Ultra-low power electronics with steep sub-threshold swing devices, ferroelectric materials, and cryogenic operation具有陡峭亚阈值摆幅器件、铁电材料和低温操作的极低功耗电子学
deleteMicroelectronic Engineering
IF3.1
delete2026-09-01
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PREAI
deleteLu, Darsen D.; Lu, Hao-Yu; Hsieh, Chia-Chi; Huang, Ting-Yin; De, Sourav; Lee, Yao-Jen; Kao, Kuo-Hsing; Chiang, Meng-Hsueh; Wang, Yeong-Her
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Design of temperature resistant dual band VCO with integrated TFC circuit for studying aging affect using machine learning framework基于机器学习框架研究老化影响的耐温双频VCO及集成TFC电路的设计
deleteMicroelectronic Engineering
IF3.1
delete2026-09-01
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PREAI
deleteBorgohain, Susankar; Dutta, Khrishtina; Choudhury, Rashmi; Mazumdar, Ruchira; Borah, Niranjan Jyoti; Dutta, Pranab Kishore; Gogoi, Mriganka
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Cu-ion dynamics-regulated forming-free resistive switching in two-dimensional Ferroionic CuBiP2Se6二维铁离子性CuBiP2Se6中铜离子动力学调控的无需成膜电阻开关
deleteMicroelectronic Engineering
IF3.1
delete2026-09-01
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PREAI
deleteLi, Yutao; Zhen, Weili; Li, Ce; Zhang, Zirui; Yu, Tianze; Deng, Qixin; Sun, Linfeng
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Modified compact modeling of tunnel diodes and its applications in ternary logic circuits隧道二极管的改进紧凑建模及其在三值逻辑电路中的应用
deleteMicroelectronic Engineering
IF3.1
delete2026-09-01
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PREAI
deleteLiu, Jingyi; Zhao, Guangchao; Coquet, Philippe; Huang, Mingqiang; Wang, Xingli; Tay, Beng Kang
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Monolayer germanium-sulfide nanoribbons with edge defects: A quantum-transport study含边缘缺陷的单层锗硫纳米带：一项量子输运研究
deleteMicroelectronic Engineering
IF3.1
delete2026-08-22
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PREAI
deleteTomo Vukadin; Josip Jaram; Mislav Matić; Mirko Poljak
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High-robustness and high-density VCMA-MRAM with energy-efficient BL-write scheme高鲁棒性和高密度VCMA-MRAM及其能效BL写入方案
deleteMicroelectronic Engineering
IF3.1
delete2026-08-06
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PREAI
deleteYaling Wang; Chao Wang; Jiaxin Li; Xiaoyang Xu; Hanbin Wang; Mingche Li; Weimeng Zhao; Zhongzhen Tong; Bi Wang; Zhaohao Wang
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Challenges in Cu PVD optimization for high-aspect-ratio via metallization高深宽比通孔金属化中Cu PVD优化的挑战
deleteMicroelectronic Engineering
IF3.1
delete2026-08-04
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PREAI
deleteHugo Nuez; Alice De Sousa Martins; Magali Gregoire; Rodolphe Bancheri; Julie Loche; Nassere Dine Hamdani
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WOx interfacial engineering for imprint suppression in HfZrO2 ferroelectric capacitorsWOx界面工程用于抑制HfZrO2铁电电容器的印痕效应
deleteMicroelectronic Engineering
IF3.1
delete2026-08-04
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PREAI
deleteZibo Dong; Zeping Weng; Daolin Cai; Yi Zhao
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Understanding the impact of vdW gap on the reliability of nanoscale MoS FETs by TCAD modeling通过TCAD建模理解范德华间隙对纳米尺度MoS₂ FETs可靠性的影响
deleteMicroelectronic Engineering
IF3.1
delete2026-08-03
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PREAI
deleteYezhu Lv; Yehao Wu; Yury Yu. Illarionov
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Pt redistribution in Ni(Pt)Si layers obtained via total vs. partial reactions and its impact on specific contact resistivity通过完全与部分反应获得的Ni(Pt)Si层中Pt的再分布及其对特定接触电阻率的影响
deleteMicroelectronic Engineering
IF3.1
delete2026-08-01
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PREAI
deleteGuillemin, Sophie; Ferreint-Roselli, Lilla; Gergaud, Patrice; Bernier, Nicolas; Tinti, Isabelle; Bomme, Cedric; Gauthier, Nicolas; Rodriguez, Philippe
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Logic and SRAM design co-optimization for A7 monolithic CFETs using backside gate contact-enabled hybrid power delivery通过背面栅极接触启用的混合电源供电实现A7单片CFET的逻辑与SRAM设计协同优化
deleteMicroelectronic Engineering
IF3.1
delete2026-08-01
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PREAI
deleteHe, Hao; Xu, Lijun; Ma, Xiaoning; An, Kunlong; Jia, Yuntian; Zhang, Yajia; Li, Zhiqiang; Liu, Jianyun; Cao, He; Wu, Zhenhua; Xu, Qinzhi
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LWR-driven hot carrier degradation-induced variability in CMOS devices: mechanisms and mitigationLWR驱动的热载流子退化引起的CMOS器件变化：机理与缓解
deleteMicroelectronic Engineering
IF3.1
delete2026-07-06
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PREAI
deleteYaoting Wang; Yongyu Wu; Dawei Gao; Kai Xu; Hai Wang; Zenan Wang; Kai Xu
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Design of a memristive Chen chaotic system featuring hardware-friendly nonlinearity and its fully integrated circuit validation using SMIC 180 nm CMOS process基于硬件友好非线性特性的忆阻蔡氏混沌系统设计及其基于SMIC 180 nm CMOS工艺的完全集成电路验证
deleteMicroelectronic Engineering
IF3.1
delete2026-07-03
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PREAI
deleteZhikui Duan; Yuqi Wang; Jiacheng Li; Xinmei Yu; Shaobo He
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40 nm-thick Pt/(Al0.9Sc0.1)N/Pt ferroelectric capacitor stacks for logic-embedded memory on 300 mm Si with wafer-scale uniformity and process stability40 nm厚的Pt/(Al0.9Sc0.1)N/Pt铁电电容器堆栈，用于300 mm硅片上的逻辑嵌入式存储器，具有晶圆级均匀性和工艺稳定性
deleteMicroelectronic Engineering
IF3.1
delete2026-07-01
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deleteDoko, Soshun; Matsui, Naoko; Irisawa, Toshikazu; Tsunekawa, Koji; Okamoto, Kazuki; Funakubo, Hiroshi
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Graphene materials and devices for 6G networks: A critical review石墨烯材料与器件在6G网络中的应用：综述
deleteMicroelectronic Engineering
IF3.1
delete2026-06-22
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deleteA.S. Augustine Fletcher; P. Murugapandiyan; J. Ajayan; Asisa Kumar Panigrahy; S. Bestley Joe; V. Vanitha
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Interface engineering for dual-gated graphene transistors with high-k Bi4Ti3O12 dielectric layer高介电常数Bi4Ti3O12介电层双栅石墨烯晶体管的界面工程
deleteMicroelectronic Engineering
IF3.1
delete2026-06-18
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PREAI
deleteTian Tian; Hui Xie; Haihua Wang; Jing Wan; Sui-Dong Wang
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Exploring the relationship between doping and Ti-silicidation for advanced FDSOI applications探索掺杂与Ti硅化物形成之间的关系，以用于先进FDSOI应用
deleteMicroelectronic Engineering
IF3.1
delete2026-06-11
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deleteMarie Merlin; Théo Cabaret; Helen Grampeix; Nicolas Gauthier; Mario Ghostine; Joel Kanyandekwe; Philippe Rodriguez; Patrice Gergaud
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From dopant diffusion to optical functionality: A computational study of hyperdoped silicon从掺杂剂扩散到光学功能：超掺杂硅的计算机研究
deleteMicroelectronic Engineering
IF3.1
delete2026-06-08
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deleteAlberto Debernardi
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Defect engineering effects on the structural and electronic properties of scandium oxychloride monolayers氧化氯化钪单层的缺陷工程效应对其结构和电子性质的影响
deleteMicroelectronic Engineering
IF3.1
delete2026-06-01
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PREAI
deleteBarhoumi, Mohamed; Rhimi, Lamia; Bouzidi, Saidi; Zeiri, Nabil; Sayed, Mohamed E.; Samir, Ahmed; Said, Moncef
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