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Solid-State Electronics

IF1.4
论文数96
被引数6331
期刊论文 96
发表时间
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Enhancement of IGZO TFT performance and reliability by controlling the N2/O2 annealing ambient通过控制N2/O2退火气氛提升IGZO TFT的性能和可靠性
deleteSolid-State Electronics
IF1.4
delete2026-08-01
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PREAI
deleteHong, Sangmin; Oh, Ire; Chu, Seungwoo; Choi, Suji; Song, Jang-Kun; Kim, Yong-Sang; Yi, Junsin
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Wide-range characterization of GaN HEMTs and its associated compact modeling procedure宽范围GaN HEMTs表征及其相关紧凑建模过程
deleteSolid-State Electronics
IF1.4
delete2026-05-01
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deleteOAAI
deleteDahmani, Salim; Buttay, Cyril; Allard, Bruno; Lu, Xuyang; Li, Ke; Seck, Elhadji Adama; Soltani, Ali; Maher, Hassan
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Fabrication and characterization of MnxZn(1-x)Ob (x=0.02, 0.04, 0.06, 0.08 & 0.10) as a buffer layer for CZTS thin film solar cellsMnxZn(1-x)Ob (x=0.02, 0.04, 0.06, 0.08 & 0.10)作为CZTS薄膜太阳能电池缓冲层的制备与表征
deleteSolid-State Electronics
IF1.4
delete2026-03-01
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PREAI
deleteAbdullah, Huda; Abidin, Muhammad Syazwan Akmal Zainal; Xian, Kang Jian; Naim, Norshafadzila Mohammad; Mustaza, Seri Mastura; Mohmad, Abdul Rahman; Mohammad, Masita; Othman, Mohd Hafiz Dzarfan; Septiani, Ni Luh Wulan; Fen, Yap Wing; Rizwan, Muhammad
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Improving the analog switching behavior in HfO2-based RRAM with simple 1T1R structure configuration通过简单1T1R结构配置改善HfO2基RRAM的模拟开关特性
deleteSolid-State Electronics
IF1.4
delete2026-02-01
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PREAI
deleteXia, Jian; He, Huikai; Shen, Dingyi; Jiang, Xiangyang; Yang, Juntao
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Unified approach for considering the effect of doping and device temperature on the band structure and electrostatics of UTB SOI DG MOS devices统一方法用于考虑掺杂和器件温度对超薄体SOI双栅MOS器件能带结构和静电学的影响
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IF1.4
delete2026-02-01
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PREAI
deleteDhote, Yogesh; Mishra, Nalin Vilochan; Medury, Aditya Sankar
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Numerical analysis of defects passivation for tungsten-doped indium oxide thin film transistors by using hydrogen peroxide as cosolvent in a supercritical fluid system通过在超临界流体系统中使用过氧化氢作为共溶剂对钨掺杂氧化铟薄膜晶体管缺陷钝化的数值分析
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IF1.4
delete2026-02-01
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PREAI
deleteTang, Zeqiu; Gan, Kai-Jhih; Chang-Liao, Kuei-Shu; Zhao, Zefu; Xiang, Jialong; Zhang, Bojun; Chin, Chih-Cheng; Cheng, Yi-Hsuan; Yu, Cheng-Chang; Huang, Po-Chung; Fang, Chao-Yi; Ruan, Dun-Bao
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Assessment of dual-oxide options for LDMOS transistors in FinFET technology评估FinFET技术中LDMOS晶体管的双氧化物方案
deleteSolid-State Electronics
IF1.4
delete2026-02-01
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deleteOAAI
deleteRuggieri, Alessandro; Tondelli, Lisa; Selmi, Luca
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A probabilistic compact model of ReRAM memories for accurate and high-performance simulationReRAM存储器的概率紧凑模型，用于准确和高性能仿真
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IF1.4
delete2026-02-01
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PREAI
deleteGuitarra, S.; Gavilanez, M.; Cevallos, J.; Velez, A.
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Unveiling the output conductance dynamics in Nanosheet FET: Does cryogenic temperature Make a Difference?揭示纳米片FET中的输出电导动力学：低温是否产生影响？
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IF1.4
delete2026-02-01
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PREAI
deleteMalvika; Singh, Prabhat; Bagga, Navjeet; Shakir, Mohd.; Dixit, Ankit; Kumar, Naveen; Georgiev, Vihar; Dasgupta, S.
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Investigation of cap layer effects on low-contact-resistance vanadium-based Au-free low-temperature ohmic contacts for AlGaN/GaN HEMT研究盖层对低接触电阻无金钒基低温欧姆接触在AlGaN/GaN HEMT中影响
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IF1.4
delete2026-02-01
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PREAI
deleteXie, Zijing; Ma, Xiao; Li, Xinghuan; Tang, Jun; Wang, Hong
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Ag-Cu2O nano composite: A comprehensive study on Ag concentration effect on physical properties for a two-band laser detectorAg-Cu2O纳米复合材料：Ag浓度对双带激光探测器物理性质影响的全面研究
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IF1.4
delete2026-01-01
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PREAI
deleteSalim, Evan T.; Mahdi, Rana O.; Abbas, Roaa A.; Salim, Zaid T.; Gopinath, Subash C. B.; Al-Amiery, Ahmed A.
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Difference in kinetics between thermal nitridation and radical nitridation processes of 4H-SiC surface considering simultaneous N-incorporation and N-desorption reactions考虑同时进行N-掺入和N-脱附反应的4H-SiC表面热氮化和自由基氮化过程动力学差异
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IF1.4
delete2026-01-01
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PREAI
deleteYoshida, Haruki; Onaya, Takashi; Tamura, Atsushi; Kita, Koji
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1T-DRAM with retrograde doping (vol 232, 109315, 2026)反向掺杂的1T-DRAM（第232卷，第109315页，2026年）
deleteSolid-State Electronics
IF1.4
delete2026-01-01
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PREAI
deleteUlla, Maki; Bashir, M. D. Yasir; Siddiqui, Mohammad Jawaid
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Bonding of micro LEDs using wet reflow process of indium bumps based on SU-8 solder mask基于SU-8焊料掩模的铟凸点湿法回流工艺微LED键合
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IF1.4
delete2026-01-01
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deleteBai, Shuangjia; Lang, Taifu; Lin, Xin; Wang, Shuaishuai; Wang, Zhihua; Lin, Chang; Yan, Qun; Sun, Jie
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Application of forksheet transistor in operational transconductance amplifier叉指式晶体管在运算跨导放大器中的应用
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IF1.4
delete2026-01-01
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PREAI
deleteMartino, Joao Antonio; de Paula, Julius Andretti Peixoto Pires; Agopian, Paula Ghedini Der; Ritzenthaler, Romain; Mertens, Hans; Veloso, Anabela; Horiguchi, Naoto
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Impact of top electrode materials on resistive switching characteristics of TiOx-based MIM structures顶电极材料对TiOx基MIM结构电阻开关特性的影响
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IF1.4
delete2026-01-01
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PREAI
deleteIslam, Karimul; Sultana, Rezwana; Dziegielewska, Aleksandra; Mroczynski, Robert
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Exploring low-k/high-k multilayers as high breakdown strength dielectrics for capacitors探索低介电常数/高介电常数多层结构作为电容器的高击穿强度介电材料
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IF1.4
delete2026-01-01
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deleteChaussard, Julie; Guerin, Chloe; Lefevre, Aude; Gonon, Patrice; Jousseaume, Vincent
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Short-term charge trapping effects in ferroelectric FETs: impact of pulse amplitude and timing铁电FET中的短期电荷俘获效应：脉冲幅值和时间的影响
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IF1.4
delete2026-01-01
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PREAI
deleteKleimaier, Dominik; Dunkel, Stefan; Mulaosmanovic, Halid; Muller, Johannes; Beyer, Sven; Havel, Viktor; Mikolajick, Thomas
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Warm white electrical sensitivities of pentacene-based Schottky photodiode基于五苯基的肖特基光电二极管的暖白色电灵敏度
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IF1.4
delete2026-01-01
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PREAI
deleteAli, Ghusoon M.; Hussain, Kahtan Adnan; Armoot, Shahad T.
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Radio-frequency variability of GAA Si NS CFETs induced by PVE and IPF simultaneously由PVE和IPF同时引起的GAA Si NS CFETs射频变异性
deleteSolid-State Electronics
IF1.4
delete2026-01-01
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deleteKola, Sekhar Reddy; Chuang, Min-Hui; Li, Yiming
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