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Semiconductor Science and Technology 封面图

Semiconductor Science and Technology

IF2.1
论文数231
被引数8609
期刊论文 231
发表时间
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Recent advances in diamond-gallium oxide heterojunction photodetectors: a review of emerging technologies金刚石-氧化镓异质结光电探测器的研究进展：新兴技术综述
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deleteLi, Xiaoyan; Jiang, Nan; Wang, Fangjun; Wei, Xianquan; Hu, Wei
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Investigation of mechanical properties and dislocation glide in homoepitaxial and heteroepitaxial Mg-doped GaN研究同质外延和异质外延Mg掺杂GaN的力学性能和位错滑移
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deleteShu, Zhengdong; Wu, Wenxuan; Wang, Xiaodan; Xu, Da; Ke, Lei; Zeng, Xionghui; Xu, Ke
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Ultra-low on-state voltage and saturation current carrier stored trench bipolar transistor with orthogonal 3D arranged dual-trench具有正交3D排列双沟槽结构、超低导通电压和饱和电流的载流子存储沟槽双极晶体管
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deleteZhang, Jinping; Feng, Yunlong; Deng, Haonan; Zhu, Rongrong; Zhang, Bo
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Monolithically integrated GaN hysteresis comparator based on complementary logic基于互补逻辑的单片集成GaN滞回比较器
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deleteMa, Shaoyan; Jiang, Qimeng; Huang, Sen; Yang, Yang; Zhang, Xuanming; Liu, Jianfei; Wang, Xinhua; Wei, Ke; Gao, Xinguo; Cen, Lizhao; Liu, Wen; Liu, Xinyu
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Design and investigation of a label-free biosensor based on GaSb-source dual-material gate heterojunction tunneling field-effect transistor基于GaSb源双材料栅异质结隧穿场效应晶体管的标签自由生物传感器的设计与探究
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deleteHe, Xiaoqiang; Xie, Haiwu; Dong, Feng
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A novel 1.2 kV GaN trench MOSFET with reduced saturation current一种新型1.2 kV GaN沟槽MOSFET，具有降低的饱和电流
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deleteJamal, Rashid; Gupta, Partha Sarathi; Rahaman, Hafizur
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Preparation and properties of Cu2O\Al2O3\ZnSnN2 heterojunctionsCu2O/Al2O3/ZnSnN2异质结的制备与性能
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deleteCai, Xing-Min; Liang, Jian-Lin; Xiong, Wan-Fang; Xie, Yi-Zhu; Zhang, Dong-Ping; Wang, Fan; Li, Jian-Wei; Ye, Fan
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Performance trade-off and optimization strategies for capacitance, DCR and PDP in SPAD devicesSPAD器件中电容、直流电阻和PDP的性能权衡与优化策略
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deleteLiu, Junliang; Liu, Wangyang; Wang, Chunwang; Zhang, Zekai
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Influence of aluminium incorporation on the semiconducting properties of p-type tin monoxide铝掺杂对p型氧化亚锡半导体性质的影响
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deletePeek, Benjamin J.; Werner, Matthew; Niang, Kham; Chen, Xiao; Flewitt, Andrew J.; Clark, Oliver W. S.; Goodall, Joe C.; Johnson, Andrew L.; Das, Satyajit; Alkhalil, Feras; Williams, Paul A.; Chalker, Paul R.
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Metallisation-associated degradation of silicon coated with thin dielectric layers硅涂层薄介电层相关的金属化降解
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deleteKhorani, Edris; Pain, Sophie L.; Yadav, Anup; Hall, Kelsey J.; Niewelt, Tim; Grant, Nicholas E.; Murphy, John D.
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Electrical characterization of high-k (k > 115) crystalline SrTiO3 (STO) thin film integration with GaN with nanomembrane transfer process高介电常数（k > 115）晶态SrTiO3（STO）薄膜与GaN的纳米薄膜转移工艺集成电学特性表征
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deleteAlam, Md Tahmidul; Lee, Kyoungjun; Wang, Guangying; Eom, Chang-beom; Gupta, Chirag
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Impact of miscut angles on mechanical properties and surface damage of (100) β-Ga2O3切角角度对(100) β-Ga₂O₃的力学性能及表面损伤的影响
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deleteBi, Yuefei; Jin, Zhu; Wu, Defan; Bao, Chenchen; Liu, Yingying; Li, Cheng; Xia, Ning; Zhu, Qi; Zhang, Hui; Yang, Deren
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Effective mobility in N-MOSFET: comparison of McLarty and split C-V methods, and the mobility degradation factors effectsN-MOSFET中的有效迁移率：McLarty与分割C-V方法的比较，以及迁移率退化因子的影响
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deleteMasson, P.; Kubica, R. M. R.; Dahbi, S.; Bousmaha-Jouve, R.; Amouroux, J.; Dura, J.; Julien, F.; Misra, V
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A numerical simulation of thermal field optimization and stress distribution in β-Ga2O3 single crystals grown by the vertical Bridgman method垂直布里奇曼法生长的β-Ga₂O₃单晶中热场优化和应力分布的数值模拟
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deleteMeng, Biao; Zhai, Xiaolin; Wang, Minrui; Zhou, Shun; Hu, Zhihao; Wang, Xiangjin; Zhang, Zhaofu
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Electro-thermal analysis of device geometry dependence on the amorphous cap size in phase change memory devices器件几何结构对相变存储器器件中非晶盖尺寸的机电热分析
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deleteMishra, Amiya Kumar; Pandey, Shivendra Kumar
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Review on fabrication and applications of GaN nanorods氮化镓纳米棒制备与应用综述
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deleteWei, Dushuai; Zhang, Boen; Zhang, Shiying; Yang, Boyuan; Sun, Defu; Yu, Huidong; Jiang, Kaize; Wang, Benfa; Wu, Yuzhu; Li, Qiubo; Wang, Lihuan; Zhang, Lei; Wang, Guodong; Wang, Shouzhi; Zhang, Yu; Xu, Qingjun
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Efficacy of π-gate in LDMOS for improved safe operating area and figure of meritsLDMOS中π-栅的效能及其对安全工作区与性能指标的改善
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deleteHussain, Md Sheeraz; Sirohi, Ankit; Lahgere, Avinash; Chauhan, Yogesh Singh; Akram, Md Waseem
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Explicit lattice parameter determination and Raman study of GeSn-epilayers on Ge/Gd2O3/Si(111) substrates显式确定GeSn外延层在Ge/Gd₂O₃/Si(111)衬底上的晶格参数及拉曼研究
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deleteTharundev, V. V.; Singh, Dushyant; Vigneshwari, S. R.; Maity, Subha; Khiangte, Krista R.
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High ultraviolet stability red phosphorescent organic light-emitting diode based on fluorinated copper phthalocyanine interface modification基于氟化铜酞菁界面修饰的高紫外稳定性红光有机发光二极管
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deleteZhang, Yixiao; Zhou, Lulu; Zhou, Qi; Liu, Shulei; Wan, Quanpeng; Ye, Zhonghua; Li, Jiao; Shi, Wei; Wei, Bin
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Modulation of optoelectronic performance in MoTe2/MoS2 heterojunction via strain engineering通过应变工程调控MoTe2/MoS2异质结的光电器件性能
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deleteLi, Yike; Wang, Jiaju; Wang, Yunfei; Gao, Yuan; Nan, Haiyan; Bing, Dan
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