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Electronic nature of the surface defect layer in Cu(In,Ga)Se2: Sensitivity analysis of carrier mobility and defect states via Muon-SCAPS study Cu(In,Ga)Se2表面缺陷层的电子性质:通过μ子-SCAPS研究对载流子迁移率和缺陷态的敏感性分析 Violas, A. F.; Castelo-Branco, J.; Alberto, H., V; Vilao, R. C.; Gil, J. M.; Oliveira, A.; Teixeira, J. P.; Fernandes, P. A.; Salome, P. M. P. 分享 收藏
Quantum dot-coated graphene/MoS2 barristor for high-responsivity infrared photodetection (vol 86, pg 118, 2026) 量子点涂层石墨烯/MoS2巴里斯特红外光电探测高响应度(卷86,页118,2026) Shin, Jinsoo; Park, Do-Hyun; Choi, Inchul; Yu, Jaeho; Lee, Gil-Woo; No, You-Shin; Kim, Un Jeong; Chung, Hyun-Jong 分享 收藏
Effect of top electrode on interfacial layer formation and polarization switching kinetics in post-deposition annealed Hf0.5Zr0.5O2 capacitors 后沉积退火Hf0.5Zr0.5O2电容器中顶电极对界面层形成及极化开关动力学的影响 Bin Park, Yu; Jung, Tae Hyun; Kim, Beomjun; Kim, Jeonglyul; Lee, Jung Kyu; An, Sang Won; Woo, Chang-Su; Kim, Beomjong; Jung, Hyung-Suk; Yoo, Hyobin; Yang, Sang Mo 分享 收藏