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IEEE Transactions on Device and Materials Reliability

IF2.3
论文数84
被引数2623
期刊论文 84
发表时间
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Digital Probing of Activation Energy for Evaluating Reliability in 2-D and 3-D NAND Flash Memory通过数字探针评估2-D和3-D NAND闪存可靠性的激活能
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deleteSingh, Dharmendra Kumar; Marothya, Himanshu; Shetty, Arjun; Mondal, Sandip
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High Gate Reliability and Breakdown Voltage p-GaN HEMTs Based on Post-Annealing-Free Oxygen Plasma Treatment基于后退火自由氧等离子体处理的具有高栅极可靠性和击穿电压的p-GaN HEMT
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deleteQu, Zifeng; Duan, Jiachen; Li, Ang; Zhang, Xuanming; Tian, Hao; Wu, Jingyue; Guo, Qiyi; Zhang, Qiyuan; Jiang, Yizhou; Luo, Ningyu; Zhang, Xiaodong; Yu, Guohao; Long, Chao; Liu, Wen; Wen, Huiqing
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Effects of Electrolyte Volume on Electrochemical Migration of Tin in Water Drop Test水滴试验中电解液体积对锡电化学迁移的影响
deleteIEEE Transactions on Device and Materials Reliability
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deleteLee, Ee Lynn; Sing Goh, Yi; Haseeb, A. S. M. A.; Hoong Wong, Yew; Faizul Mohd Sabri, Mohd; Yew Low, Boon
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Deep Learning-Driven Ensemble Learning for Solar PV Faults Detection Under Low Irradiance Condition深度学习驱动的集成学习在低照度条件下的太阳能光伏故障检测
deleteIEEE Transactions on Device and Materials Reliability
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deleteIsmail, Harun; Su, Shun-Feng
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Radiation-Hardened SRAM Designs for Self-Recovery From all Single- and Double-Node Upsets抗辐射加固SRAM设计，用于从所有单节点和双节点翻转中实现自恢复
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deleteYan, Aibin; Li, Jinpeng; Li, Kun; Wang, Wenhao; Huang, Zhengfeng; Ni, Tianming; Wang, Qijun; Girard, Patrick; Wen, Xiaoqing
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Modeling Short- and Long-Term NTC Thermistor Resistance DriftNTC热敏电阻短期和长期电阻漂移建模
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deleteVecchio, Michael A.; Osenbach, John
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Enhancing the Electrical Performance of Solution-Processed In2O3 Thin-Film Transistors Using a Concentrated Plasma Beam利用高浓度等离子体束提升溶液法制备的In2O3薄膜晶体管的电学性能
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deleteWang, Xiao-Lin; Zhao, Han-Lin; Kim, Sung-Jin
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Experimental Analysis and Circuit-Level Mitigation Strategies for Intermittent Errors in Resistive RAMs阻变存储器中间歇性误差的实验分析与电路级缓解策略
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deleteAziza, H.; Xun, H.; Fieback, M.; Taouil, M.; Hamdioui, S.
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Capacitor-Coupled Offset-Canceled DRAM Sense Amplifier With Ultralow Offset Voltage and Hidden Cancelation Time具有超低偏移电压和隐藏消除时间的电容耦合偏移消除DRAM读出放大器
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deleteDai, Chenghu; Qin, Yongqi; Lv, Jing; Zhang, Beibei; Peng, Chunyu; Li, Xin; Liu, Yu; Wu, Xiulong; Lin, Zhiting
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Impact of Radiation Degradation in CIS on Star Sensor's Detection and Positioning Capabilities辐射降解对CIS中星敏感器检测和定位能力的影响
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deleteLi, Kunfang; Feng, Jie; Wen, Lin; Zhang, Wei; Guo, Qi; Li, Yudong
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Impact of EP-CG Interlayer Dielectric on Performance of L-Shaped Split-Gate Flash MemoryEP-CG互层介电层对L形分裂栅闪存性能的影响
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deleteLing, Wanyi; Ren, Kun; Qi, Dianyu; Wu, Yongyu; Li, Guangji; Zhou, Miao; Xu, Qingshuang; Li, Xuan; Fan, Dertsyr; Chuang, Ichun; Cheng, Tzungwen; Tsai, Chenming; Gao, Dawei
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TCAD Investigation on a Novel SiC Trench MOSFET With Integrated N+-PolySi/SiC Heterojunction Diode for Improved Third-Quadrant and High-Temperature Performances具有集成n-polusi/SiC异质结二极管的新型SiC沟槽MOSFET的TCAD研究，可改善第三象限和高温性能
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deleteYi, Bo; Zhang, Gaolei; Wu, Xinyi; Li, Huan; Cheng, Junji; Huang, Haimeng; Kong, Moufu; Yang, Hongqiang
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Bypass Diode Performance Analysis and Improvement for Enhanced Electrothermal Response of PV Arrays旁路二极管性能分析与改进以提高光伏阵列的电热响应
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deleteBaranwal, Kashika; Prakash, Prem; Yadav, Vinod Kumar
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Cost-Efficient Bidirectional ESD Protection for 650-V GaN Power HEMT With Co-Packaged Transient Voltage Suppressor经济高效的650-V GaN功率HEMT双向ESD保护，带有共封装瞬态电压抑制器
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deleteKer, Chieh-Chen; Lin, Chun-Yu; Ker, Ming-Dou; Chiang, Tsung-Yin; Wang, Chun-Chi; Jiang, Ryan
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Analysis of Multicrystalline Si Solar Cell Degradation Due to Reverse Bias and High Temperature Aging由于反向偏压和高温度老化导致的多晶硅太阳能电池衰减分析
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deleteTakeshita, T.; Abe, Y.
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A Novel Radiation-Hardened 14T SRAM Bitcell Based on 16nm FinFET基于16nm FinFET的新型抗辐射14T SRAM存储单元
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deleteHu, Minchi; Shen, Lei; Xie, Sisi; Zheng, Xuezhi; Zhang, Jing; Zeng, Hongjie; Wu, Zehao; Cai, Chang
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On the Response Time Constant of Interface Defects in Accumulation关于积累区界面缺陷响应时间常数的研究
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deleteCheung, Kin P.; Wen, Yu-Xin; Tsui, Bing-Yue
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Layered Trench Gate Exhibiting Source/Drain Over-Etch Immunity Without Punch-Through Stopper具有源/漏过刻蚀免疫性的无穿通停止器的层叠沟槽栅极
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deleteJeong, Seungjoon; Kim, Myongjin; Lim, Subin; Shin, Huiseong; Shin, Changhwan
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Enhanced Stability in Sn-Doped InGaZnO TFTs: The Critical Role of Channel Length and the Dual Effect of Lateral Field Revealed by eMSM AnalysisSn掺杂InGaZnO TFTs中稳定性的增强：通过eMSM分析揭示沟道长度和横向电场的双重效应的关键作用
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deleteLi, Xue; Chen, Kai; Yin, Weinan; Li, Yunlong
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Performance-Limiting Trapping Effects in n-Type Ga2O3 Schottky Barrier Diodesn型Ga2O3肖特基势垒二极管中的性能限制性陷阱效应
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deleteKumari, Shikha; Singh, Shreesh; Piyush, Kumar; Vigneshwara Raja, P.
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