未登录返回期刊详情
Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity沟道全环绕可重构场效应晶体管及其栅控极性的可扩展性仿真研究
Huo, Ran; Ou, Shijun; Wu, Zhehao; Zhang, Han; Lv, Bowen; Shao, Yvyang; Ma, Zichao; Zhang, Min; Chan, Mansun; Zhou, Changjian.png)
分享.png)
收藏 Measurement and Analysis of Multistate Ferroelectric Transistors in 28 nm CMOS Process28 nm CMOS工艺中多态铁电晶体管的测量与分析Chowdhury, Sayma Nowshin; Mazzoni, Alex L.; Zhang, Xiaohang; Glasmann, Andreu L.; Mulaosmanovic, Halid; Dunkel, Stefan; Beernink, Gunda; Beyer, Sven; Najmaei, Sina; Shah, Sahil 分享 收藏 Dynamic Evolution of Hydrogen in IGZO Transistors for PBTI Improvement by Low-Temperature Atmosphere Annealing通过低温气氛退火改善PBTI的IGZO晶体管中氢的动态演化Xiang, Liang; Yan, Gangping; Yang, Hong; Yang, Shangbo; Xu, Gaobo; Sun, Mingyang; Wang, Guilei; Yin, Huaxiang; Wang, Xiaolei; Luo, Jun; Wang, Wenwu 分享 收藏 Miller-Current Suppressing Technology for False Turn-On Protection of Commercial p-GaN HEMTs商业p-GaN HEMTs假开启保护的Miller电流抑制技术Liu, Ziheng; He, Jiayin; Peng, Hongjie; Gao, Ju; Xia, Wenbo; Ao, Chengkang; Wang, Jinyan; Wang, Maojun; Wei, Jin; Xie, Yong 分享 收藏 Evaluation of Interface Traps Within Drift Region in LDMOS Using a Multi-Pulse Test Method采用多脉冲测试方法对LDMOS漂移区内部界面的陷阱进行评估Guo, Qianwen; Cao, Jiawei; Zhou, Ke; Liu, Fang; Zhao, Dongyan; Chen, Yanning; Wu, Bo; Deng, Yongfeng; Gao, Dawei; Ke, Xugang; Li, Junkang; Zhang, Rui 分享 收藏 Overcoming the Mobility-Stability Trade-Off Using an Ultra-Thin Oxide Capping Layer via N2O Plasma Treatment通过N2O等离子体处理使用超薄氧化物覆盖层克服迁移率-稳定性权衡Chen, Yi-Xuan; He, Yi-Xin; Hsieh, Yu-Shan; Liu, Cheng-Kun; Li, Hui-Hsuan; Pao, Po-Heng; Chih, Jia-Hao; Liu, Bo-Heng; Chou, Tsung-Te; Su, Chien-Ying; Lin, Yu-Hsien; Chien, Chao-Hsin 分享 收藏 A Cryogenic Ultra-Thin Body SiGeSn Transistor低温超薄体SiGeSn晶体管Fuchsberger, Andreas; Knaller, Nikolas; Nazzari, Daniele; Marboeck, Jacqueline; Navarrete, Enrique Prado; Brehm, Moritz; Pacheco-Sanchez, Anibal; Vogl, Lilian; Schweizer, Peter; Weber, Walter M.; Sistani, Masiar 分享 收藏 Investigation of PBTS-Induced Degradation Mechanisms in SA TG Coplanar IGZO TFTs Using Low-Frequency Noise Analysis利用低频噪声分析研究PBTS诱导的SA TG共面IGZO TFTs中的降解机制Lee, Hyeon-Woo; Lee, Su-Hyeon; Lee, Dong-Ho; Oh, Chae-Eun; Son, Dong-Hwi; Kim, Chang-Hyeon; Jeong, Chan-Yong; Jang, Jaeman; Ahn, Byung-Du; Bae, Jong-Uk; Song, Sang-Hun; Kwon, Hyuck-In 分享 收藏 
.png){kind=icon}
.png){kind=icon}
.png){kind=icon}
.png){kind=icon}
