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Normally-Off Top-Gate Self-Aligned Field-Effect Transistor Including Crystal InOx Formed by Hydrogen Gas-Free Sputtering With Channel Length of 3 μm and High Field-Effect Mobility Over 75 cm2/Vs Fabricated through 400°C Process常断态顶栅自对准场效应晶体管,包括通过无氢气溅射形成的晶态InOx,沟道长度为3 μm,通过400°C工艺制备,具有超过75 cm²/Vs的高场效应迁移率
Shima, Yukinori; Kurosaki, Daisuke; Jincho, Masami; Mashiyama, Mitsuo; Watanabe, Masahiro; Kumakura, Kayo; Yasumoto, Seiji; Dobashi, Masayoshi; Koezuka, Junichi; Saito, Motoharu; Kusunoki, Koji; Yamazaki, Shunpei
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收藏 Boosting the Efficiencies of OLEDs Through ViP Technology通过ViP技术提升OLED效率
Cai, Minghan; Li, Zhenzhen; Li, Guomeng; Xia, Zengqiang; Zu, Zhao; Li, Hui; Zhao, Wenyan; Zhang, Haohan; Qu, Cheng; Zhang, Yuewei; Zhang, Dongdong; Ha, Mihwa; Song, Wonjun; Huang, Genmao; Duan, Lian; Shen, Ying; Lee, C. c.; Zhang, Deqiang
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收藏 8.3-in. 1058 ppi Crystal Indium Oxide Display With Side-by-Side Method Using Fine Metal Mask and Partition Wall Dividing OLED in Subpixels8.3英寸1058 ppi晶体氧化铟显示屏,采用细金属掩膜和分区墙分割OLED子像素的并排方法
Eguchi, Shingo; Aoyama, Tomoya; Kato, Sho; Oide, Takayuki; Inoue, Seiko; Yamagata, Sachiko; Kubota, Daisuke; Kusunoki, Koji; Idojiri, Satoru; Nakazawa, Yasutaka; Sato, Rai; Yamazaki, Shunpei
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