Hubei Yangtze Memory Laboratories

学者数10

论文数7

被引数0

关联论文 (5)

发表时间

Doping engineering in tantalum oxide-based RRAM with enhanced resistive switching behaviors and synaptic features for neuromorphic applications 基于钽氧化物RRAM的掺杂工程，具有增强的电阻开关行为和突触特性，用于神经形态应用

Materials & Design

IF7.9

2025-11-22

OAAI

Mingmin Zhu; Hui Ouyang; Zhendi Yu; Yu Du; Guangxiao Song; Wenjing Dong; Jiawei Wang; Yang Qiu; Guoliang Yu; Yan Li; Xufeng Jing; Haibin Zhu; Hao-Miao Zhou

Challenges and Advancements in High-Nickel Layered Oxides Cathode Material for Lithium-Ion Batteries 高镍层状氧化物正极材料在锂离子电池中的挑战与进展

ENERGY & ENVIRONMENTAL MATERIALS

IF14.1

2025-09-12

OAAI

Yunshan Zheng; Junfeng Li; Yijing Liu; Lanlan Feng; Wen Liu; LiLi Lin; Yiming Wang; Haoyang Peng; Jian Lu; Dong Zhou; Baohua Li

Bio-Consistent Direction-Selective Neurons Based on Threshold Switching Devices 基于阈值开关器件的生物一致性方向选择性神经元

IEEE Electron Device Letters

IF4.5

2025-08-01

PREAI

Qian Cheng; Guokun Ma; Ao Chen; Haoran Chen; Yiqun Wang; Shujuan Liu; Jie Wu; Li Tao; Hanbing Wang; Jun Zhang; Hao Wang

Upcycling Degraded LiNi0.5Co0.2Mn0.3O2 to Highly Stable Single-Crystalline Cathode Materials through Molten Salt-Assisted Reconstruction 通过熔盐辅助重构将降级LiNi0.5Co0.2Mn0.3O2升级回收为高稳定性单晶正极材料

ACS Sustainable Chemistry & Engineering

IF7.3

PREAI

Yimeng Yu; Fang Liu; Jiashen Meng; Yutao Wang; Weihao Zeng; Haoyang Peng; Hong Wang; Guan Wang; Yao Ding; Jinsong Wu

High-Threshold-Stability GeSe-Based Selector-Only Memory Enabled by Gallium Doping 高阈值稳定性GeSe基选择器唯存忆阻器通过镓掺杂实现

IEEE Electron Device Letters

IF4.5

PREAI

Yaru Zhang; Jinyu Wen; Chuanqi Yi; Lun Wang; Zixuan Liu; Ziqi Chen; Hao Tong; Xiangshui Miao