Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitationSCIENTIFIC REPORTSIF3.92025-01-020OAAI
Ion-implanted Al0.6Ga0.4N deep-ultraviolet avalanche photodiodesAPPLIED PHYSICS LETTERSIF3.62023-09-202PRE
Structural and Electrical Characterization of 2 Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot ProductionMATERIALSIF3.22019-06-1415OAAI
Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contactsAPPLIED PHYSICS LETTERSIF3.62018-06-1932OAAI
Sub 250nm deep-UV AlGaN/AlN distributed Bragg reflectorsAPPLIED PHYSICS LETTERSIF3.62017-01-0433PREAI
Strain management of AlGaN-based distributed Bragg reflectors with GaN interlayer grown by metalorganic chemical vapor depositionAPPLIED PHYSICS LETTERSIF3.62016-08-2519OAAI
Radiative recombination in GaN/InGaN heterojunction bipolar transistorsAPPLIED PHYSICS LETTERSIF3.62015-12-172PREAI
Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrateAPPLIED PHYSICS LETTERSIF3.62015-01-3052OAAI
Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substratesAPPLIED PHYSICS LETTERSIF3.62014-10-0881OAAI
Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrorsAPPLIED PHYSICS LETTERSIF3.62013-11-1838PREAI
Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrateAPPLIED PHYSICS LETTERSIF3.62013-03-1487PREAI
Polarization Matching in AlGaN-Based Multiple-Quantum-Well Deep Ultraviolet Laser Diodes on AlN Substrates Using Quaternary AlInGaN BarriersJOURNAL OF LIGHTWAVE TECHNOLOGYIF4.82012-09-019PREAI
NpN-GaN/InxGa1-xN/GaN heterojunction bipolar transistor on free-standing GaN substrateAPPLIED PHYSICS LETTERSIF3.62011-11-0723PREAI
Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion- and enhancement-mode operationAPPLIED PHYSICS LETTERSIF3.62010-06-1819PREAI
Low-noise GaN ultraviolet p-i-n photodiodes on GaN substratesAPPLIED PHYSICS LETTERSIF3.62009-06-0461PREAI
III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface chargeAPPLIED PHYSICS LETTERSIF3.62008-04-0429PREAI
Graded-base InGaN/GaN heterojunction bipolar light-emitting transistorsAPPLIED PHYSICS LETTERSIF3.62006-08-2530PREAI
GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor depositionAPPLIED PHYSICS LETTERSIF3.62006-07-07117PREAI
Device operation of InGaN heterojunction bipolar transistors with a graded emitter-base designAPPLIED PHYSICS LETTERSIF3.62006-05-0110PREAI
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