未登录

T

Theeradetch Detchprohm

University of Houston

H指数:39

被引数:5,728

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation

SCIENTIFIC REPORTS

IF3.9

2025-01-020

OAAI

Non-planar growth of high Al-mole-fraction AlGaN heterostructures on patterned GaN substrates for ultraviolet laser diodes

APPLIED PHYSICS LETTERS

IF3.6

2023-09-250

PRE

Ion-implanted Al0.6Ga0.4N deep-ultraviolet avalanche photodiodes

APPLIED PHYSICS LETTERS

IF3.6

2023-09-202

PRE

Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2021-01-017

PRE

Structural and Electrical Characterization of 2 Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production

IF3.2

2019-06-1415

OAAI

Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application

用于光学和功率器件应用的BAlN/GaN异质界面的近零价带和大导带偏移

APPLIED SURFACE SCIENCE

IF6.9

2018-11-0126

PREAI

Thermal characterization of gallium nitride p-i-n diodes

APPLIED PHYSICS LETTERS

IF3.6

2018-02-1454

OAAI

Rethinking phonons: The issue of disorder

NPJ COMPUTATIONAL MATERIALS

IF11.9

2017-11-1688

OA

Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs/InAs1-xSbx

PHYSICAL REVIEW APPLIED

IF4.4

2017-09-2611

OAAI

Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction

APPLIED PHYSICS LETTERS

IF3.6

2017-09-2135

OAAI

Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2017-09-079

PREAI

Influence of TMAI preflow on AlN epitaxy on sapphire

APPLIED PHYSICS LETTERS

IF3.6

2017-05-1223

PREAI

Sub 250nm deep-UV AlGaN/AlN distributed Bragg reflectors

APPLIED PHYSICS LETTERS

IF3.6

2017-01-0433

PREAI

Strain management of AlGaN-based distributed Bragg reflectors with GaN interlayer grown by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS

IF3.6

2016-08-2519

OAAI

Atomic-Scale Phase Transition of Epitaxial GaN on Nanostructured Si(001): Activation and Beyond

CRYSTAL GROWTH & DESIGN

IF3.4

2016-03-247

PREAI

Onset of surface stimulated emission at 260nm from AlGaN multiple quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2015-12-1825

PREAI

Radiative recombination in GaN/InGaN heterojunction bipolar transistors

APPLIED PHYSICS LETTERS

IF3.6

2015-12-172

PREAI

Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition

APPLIED PHYSICS LETTERS

IF3.6

2015-12-0814

OAAI

Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

APPLIED PHYSICS LETTERS

IF3.6

2015-01-3052

OAAI

High 400 °C operation temperature blue spectrum concentration solar junction in GaInN/GaN

APPLIED PHYSICS LETTERS

IF3.6

2014-12-1715

PREAI