Growth of Semi-Insulating Mn-GaN by the Near-Equilibrium Ammonothermal Method and Its Application to a High-Voltage Photoconductive Semiconductor Switch近平衡氨热法制备半绝缘Mn-GaN及其在高电压光导半导体开关中的应用PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCEIF1.92025-12-010PRE
Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitationSCIENTIFIC REPORTSIF3.92025-01-020OAAI
7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field managementAPPLIED PHYSICS LETTERSIF3.62023-10-034OA
Structural and Electrical Characterization of 2 Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot ProductionMATERIALSIF3.22019-06-1415OAAI
Evaluation of GaN substrates grown in supercritical basic ammoniaAPPLIED PHYSICS LETTERSIF3.62009-02-068PREAI
Impacts of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonothermal methodAPPLIED PHYSICS LETTERSIF3.62007-12-2018OAAI
A GaN bulk crystal with improved structural quality grown by the ammonothermal methodNATURE MATERIALSIF38.52007-07-01280PREAI