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J

Jing Lang

Tianjin University of Science & Technology

H指数:21

被引数:1,379

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Reinforcement of Paper Documents by Different Starch Modification Processes

IF1.6

2025-11-010

PRE

O304 is a mitochondrial uncoupler which extends C. elegans lifespan and induces vasorelaxation of rat mesenteric arteries

O304是一种线粒体解偶联剂，可延长C. elegans的寿命并诱导大鼠肠系膜动脉的血管舒张。

Chemico-Biological Interactions

IF5.4

2025-10-210

PRE

Stacking III-Nitride Ultraviolet-B Light Emitters with High Efficiency via a Lattice-Engineered Architecture

通过晶格工程结构实现高效堆叠III族氮化物紫外-B发光二极管

Advanced Materials

IF26.8

2025-08-040

PRE

Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN

APPLIED PHYSICS LETTERS

IF3.6

2025-02-240

PRE

Ultra-thin p-AlGaN insert layer for enhancing the electrical performance of AlGaN-based deep-ultraviolet light-emitting diodes

APPLIED PHYSICS LETTERS

IF3.6

2024-12-181

PRE

The composited high reflectivity p-type electrodes with patterned ITO for AlGaN-based ultraviolet light emitting diodes

APPLIED PHYSICS LETTERS

IF3.6

2024-07-026

PRE

Influence of the barrier layer on the electrical properties of the V/Al-based Ohmic contact on n-type high-Al-fraction AlGaN

APPLIED PHYSICS LETTERS

IF3.6

2024-06-050

PRE

Significant conductivity enhancement in Al-rich n-AlGaN by modulation doping

APPLIED PHYSICS LETTERS

IF3.6

2024-04-095

OA

Variation of TaMyb10 and their function on grain color and pre-harvest sprouting resistance of wheat

IF5.7

2024-02-263

PRE

Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer

APPLIED PHYSICS LETTERS

IF3.6

2024-02-054

PRE

On the integrated p-type region free of electron blocking layer for AlGaN-based deep-ultraviolet light emitting diodes

APPLIED PHYSICS LETTERS

IF3.6

2023-12-262

PRE

Group-III nitride heteroepitaxial films approaching bulk-class quality

NATURE MATERIALS

IF38.5

2023-06-2232

PRE

Improved Ohmic contacts to plasma etched high Al fraction n-AlGaN by active surface pretreatment

APPLIED PHYSICS LETTERS

IF3.6

2021-06-0115

PREAI

Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms

APPLIED PHYSICS LETTERS

IF3.6

2021-04-1915

PREAI

Improved light extraction efficiency of AlGaN deep-ultraviolet light emitting diodes combining Ag-nanodots/Al reflective electrode with highly transparent p-type layer

IF3.3

2021-01-1324

OA

Controlled bunching approach for achieving high efficiency active region in AlGaN-based deep ultraviolet light-emitting devices with dual-band emission

APPLIED PHYSICS LETTERS

IF3.6

2020-05-2821

PREAI

Greatly enhanced performance of AlGaN-based deep ultraviolet light emitting diodes by introducing a polarization modulated electron blocking layer

IF3.3

2019-09-1228

OA

High performance of AlGaN deep-ultraviolet light emitting diodes due to improved vertical carrier transport by delta-accelerating quantum barriers

APPLIED PHYSICS LETTERS

IF3.6

2019-05-0335

PREAI

Effects of growth temperature and device structure on GaP solar cells grown by molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2015-02-1114

PREAI

Effect of a new pretreatment on the microstructure and thermal conductivity of Cu/diamond composites

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2013-12-0159

PREAI