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Single-Atom-Resolved Vibrational Spectroscopy of a Dislocation 单原子分辨率的位错振动光谱学 Jiang, Hailing; Wang, Tao; Zhang, Zhenyu; Shi, Ruochen; Xu, Xifan; Wang, Ziruo; Ma, Chaofan; Sheng, Bowen; Liu, Fang; Ge, Weikun; Wang, Ping; Shen, Bo; Gao, Peng; Lindsay, Lucas R.; Wang, Xinqiang 分享 收藏
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Experimental determination of giant polarization in wurtzite III-nitride semiconductors 六方氮化物半导体中巨极化的实验测定 Ye, Haotian; Wang, Ping; Wang, Rui; Wang, Jinlin; Xu, Xifan; Feng, Ran; Wang, Tao; Tong, Wen-Yi; Liu, Fang; Sheng, Bowen; Ma, Wenjie; An, Bingxuan; Li, Hongjian; Chen, Zhaoying; Duan, Chun-Gang; Ge, Weikun; Shen, Bo 分享 收藏
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Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN Guo, X. Q.; Xu, F. J.; Lang, J.; Wang, J. M.; Zhang, L. S.; Ji, C.; Ji, C. Z.; Zhang, Z. Y.; Tan, F. Y.; Wu, Y.; Kang, X. N.; Yang, X. L.; Tang, N.; Wang, X. Q.; Ge, W. K.; Shen, B. 分享 收藏
Study on thermal quenching mechanism and recombination dynamics of Si-bound exciton transition in AlN Li, Guoping; Tang, Ning; Ji, Chen; Wang, Qikun; Wu, Liang; Fu, Lei; Zhang, Shixiong; Chen, Shuaiyu; Zhang, Erfei; Zhang, Tianyu; Xu, Fujun; Ge, Weikun; Shen, Bo 分享 收藏
Ultra-thin p-AlGaN insert layer for enhancing the electrical performance of AlGaN-based deep-ultraviolet light-emitting diodes Ji, Chen; Wang, Jiaming; Zhang, Lisheng; Xu, Fujun; Lang, Jing; Guo, Xueqi; Zhang, Ziyao; Tan, Fuyun; Ji, Chengzhi; Kang, Xiangning; Yang, Xuelin; Tang, Ning; Chen, Zhizhong; Wang, Xinqiang; Ge, Weikun; Shen, Bo 分享 收藏
Atomic-scale visualization of defect-induced localized vibrations in GaN Jiang, Hailing; Wang, Tao; Zhang, Zhenyu; Liu, Fang; Shi, Ruochen; Sheng, Bowen; Sheng, Shanshan; Ge, Weikun; Wang, Ping; Shen, Bo; Sun, Bo; Gao, Peng; Lindsay, Lucas; Wang, Xinqiang 分享 收藏
A near-resonant excitation strategy to achieve ultra-low threshold GaN polariton lasing Yang, Jiajia; Tao, Renchun; Huang, Zhen; Li, Duo; Rong, Xin; Chu, Zihao; Liu, Qiang; Huo, Xiaodi; Li, Tai; Sheng, Bowen; Wang, Tao; Liu, Fang; Yuan, Ye; Wang, Ping; Ge, Weikun; Shen, Bo; Wang, Xinqiang 分享 收藏
The composited high reflectivity p-type electrodes with patterned ITO for AlGaN-based ultraviolet light emitting diodes Lang, J.; Xu, F. J.; Wang, J. M.; Zhang, L. S.; Sun, Z. H.; Zhang, H. D.; Guo, X. Q.; Zhang, Z. Y.; Ji, C.; Tan, F. Y.; Ji, C. Z.; Kang, X. N.; Yang, X. L.; Tang, N.; Chen, Z. Z.; Wang, X. Q.; Ge, W. K.; Shen, B. 分享 收藏
Influence of the barrier layer on the electrical properties of the V/Al-based Ohmic contact on n-type high-Al-fraction AlGaN Guo, X. Q.; Xu, F. J.; Lang, J.; Wang, J. M.; Zhang, L. S.; Zhang, Z. Y.; Ji, C.; Tan, F. Y.; Ji, C. Z.; Wu, Y.; Kang, X. N.; Tang, N.; Wang, X. Q.; Qin, Z. X.; Ge, W. K.; Shen, B. 分享 收藏
Significant conductivity enhancement in Al-rich n-AlGaN by modulation doping Fang, Xuzhou; Wang, Jiaming; Xu, Fujun; Zhang, Lisheng; Lang, Jing; Guo, Xueqi; Ji, Chen; Ji, Chengzhi; Wu, Yong; Yang, Xuelin; Kang, Xiangning; Qin, Zhixin; Tang, Ning; Wang, Xinqiang; Ge, Weikun; Shen, Bo 分享 收藏
Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer Fang, Xuzhou; Wang, Jiaming; Xu, Fujun; Zhang, Lisheng; Lang, Jing; Zhang, Ziyao; Tan, Fuyun; Yang, Xuelin; Kang, Xiangning; Qin, Zhixin; Tang, Ning; Wang, Xinqiang; Ge, Weikun; Shen, Bo 分享 收藏
On the integrated p-type region free of electron blocking layer for AlGaN-based deep-ultraviolet light emitting diodes Lang, J.; Xu, F. J.; Wang, J. M.; Zhang, L. S.; Ji, C.; Guo, X. Q.; Ji, C. Z.; Zhang, Z. Y.; Tan, F. Y.; Fang, X. Z.; Kang, X. N.; Yang, X. L.; Tang, N.; Wang, X. Q.; Ge, W. K.; Shen, B. 分享 收藏
Wavelength-Controlled Photoconductance Polarity Switching via Harnessing Defects in Doped PdSe2 for Artificial Synaptic Features 通过利用掺杂的PdSe2中的缺陷进行人工突触特征的波长控制的光电导极性切换 Jiang, Jiayang; Xu, Weiting; Sun, Zhenhao; Fu, Lei; Zhang, Shixiong; Qin, Biao; Fan, Teng; Li, Guoping; Chen, Shuaiyu; Yang, Shengxue; Ge, Weikun; Shen, Bo; Tang, Ning 分享 收藏
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Spin relaxation time enhancement induced by polarization field screening in an InGaN/GaN quantum well Zhang, Shixiong; Tang, Ning; Sun, Zhenhao; Li, Guoping; Fan, Teng; Fu, Lei; Zhang, Yunfan; Jiang, Jiayang; Jin, Peng; Ge, Weikun; Shen, Bo 分享 收藏
AlN/GaN HEMTs with fmax Exceeding 300 GHz by Using Ge-Doped n++ GaN Ohmic Contacts Yang, Liuyun; Huang, Wei; Wang, Ding; Zhang, Baoqing; Zhang, Yibin; Zhang, Junyun; Chen, Tangsheng; Ge, Weikun; Wu, Shaobing; Shen, Bo; Wang, Xinqiang 分享 收藏
RF loss reduction by a carbon-regulated Si substrate engineering in GaN-based HEMT buffer stacks Cai, Zidong; Yang, Xuelin; Shen, Zhaohua; Ma, Cheng; Chen, Zhenghao; Liu, Danshuo; Xu, Fujun; Tang, Ning; Wang, Xinqiang; Ge, Weikun; Shen, Bo 分享 收藏
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