未登录

M

Michael Titze

Sandia National Laboratories

H指数:15

被引数:797

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Tin–Lead Liquid Metal Alloy Source for Focused Ion Beams

IF3

2026-01-250

OAAI

Ion Implantation of Magnesium Guests into Type II Silicon Clathrate Films; an Alternate Approach to Doping a Cage-like Silicon Allotrope

将镁客体离子植入II型硅笼合物的薄膜中；一种掺杂笼状硅同素异形体的替代方法

IF4.7

2025-10-310

OAAI

Assessing Radiation Induced Stress Relaxation in Strained Epitaxial Films with HREBSD

Microscopy and Microanalysis

IF3

2025-07-250

OA

Radiation Response of Ga2O3 MOSFETs Probed via Focused Particle Beams

通过聚焦粒子束探测的Ga₂O₃ MOSFETs的辐射响应

Advanced Materials Technologies

IF6.2

2025-07-100

PRE

All-optical reconfiguration of single silicon-vacancy centers in diamond for non-volatile memories

用于非易失性存储器的金刚石中单个硅空位中心的全光重构

Nature Communications

IF15.7

2025-07-080

OAAI

Single-Shot Readout and Weak Measurement of a Tin-Vacancy Qubit in Diamond

PHYSICAL REVIEW X

IF15.7

2024-10-080

OA

Displacement Damage, Total Ionizing Dose, and Transient Ionization Effects in Gate-All-Around Field Effect Transistors

栅极全包围场效应晶体管中的位移损伤，总电离剂量和瞬态电离效应

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-07-172

PRE

Effect of Negative Thermal Expansion on the Zero-Phonon Line of Implanted Silicon Vacancy Color Centers in Diamond

IF6.7

2024-05-151

PRE

Fabrication of thin diamond membranes by Ne

IF4.9

2024-03-014

OAAI

Phonon-mediated temperature dependence of Er3+ optical transitions in Er2O3

COMMUNICATIONS PHYSICS

IF5.8

2024-02-282

OA

Selective Generation of V2 Silicon Vacancy Centers in 4H-Silicon Carbide

4h-碳化硅中V2硅空位中心的选择性生成

IF9.1

2024-02-133

PRE

Hyperfine Spectroscopy of Isotopically Engineered Group-IV Color Centers in Diamond

IF11

2023-10-029

OA

Measurement and Simulation of Ultra-Low-Energy Ion-Solid Interaction Dynamics

超低能离子-固体相互作用动力学的测量与模拟

IF3

2023-09-300

OAAI

Large-scale optical characterization of solid-state quantum emitters

NATURE MATERIALS

IF38.5

2023-08-2116

PRE

Mitigation of nitrogen vacancy photoluminescence quenching from material integration for quantum sensing

用于量子传感的材料集成对氮空位光致发光猝灭的缓解

MATERIALS FOR QUANTUM TECHNOLOGY

IF3.6

2023-07-062

OA

Properties of Donor Qubits in ZnO Formed by Indium-Ion Implantation

PHYSICAL REVIEW APPLIED

IF4.4

2023-05-305

OA

High-Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback

ADVANCED SCIENCE

IF14.1

2023-04-2310

OA

Fabrication of single color centers in sub-50 nm nanodiamonds using ion implantation

使用离子注入在50纳米以下纳米金刚石中制备单色中心

IF6.6

2023-02-019

OA

Nanoscale solid-state nuclear quadrupole resonance spectroscopy using depth-optimized nitrogen-vacancy ensembles in diamond

APPLIED PHYSICS LETTERS

IF3.6

2022-04-2719

OA

In Situ Ion Counting for Improved Implanted Ion Error Rate and Silicon Vacancy Yield Uncertainty

IF9.1

2022-04-1514

OA