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Markus Andreas Schubert

Nagoya University

H指数:25

被引数:2,586

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Ohmic Contact Engineering in Strained Si/SiGe Heterostructures for Cryo-Electronics Operating at 1.5 K

应变Si/SiGe异质结构中用于1.5 K低温电子器件的欧姆接触工程

Physica Status Solidi A-Applications and Materials Science

IF1.9

2026-04-220

PRE

Electroluminescence and Franz–Keldysh Modulation Observed in Sn/Ge Multi-Quantum Wells

Advanced Optical Materials

IF7.2

2026-01-290

OAAI

Atomic layer epitaxy of Si in Ge

在Ge中的Si原子层外延生长

Japanese Journal of Applied Physics

IF1.8

2026-01-140

PRE

Deposition of CeOx/SnOx-Based Thin Films via RF Magnetron Sputtering for Resistive Gas Sensing Applications

通过RF磁控溅射沉积CeOx/SnOx基薄膜用于电阻式气体传感应用

Physica B: Condensed Matter

IF0

2025-11-260

OAAI

Adaptive Epitaxy of C-Si-Ge-Sn: Customizable Bulk and Quantum Structures

C-Si-Ge-Sn的自适应外延生长：可定制的块体和量子结构

Advanced Materials

IF26.8

2025-06-110

OAAI

Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si

ADVANCED MATERIALS INTERFACES

IF4.4

2024-11-280

PRE

In Situ X-Ray Photoelectron Spectroscopy Study of Atomic Layer Deposited Cerium Oxide on SiO2: Substrate Influence on the Reaction Mechanism During the Early Stages of Growth

ADVANCED MATERIALS INTERFACES

IF4.4

2024-10-311

OAAI

All-Epitaxial Self-Assembly of Silicon Color Centers Confined Within Sub-Nanometer Thin Layers Using Ultra-Low Temperature Epitaxy

ADVANCED MATERIALS

IF26.8

2024-10-120

OAAI

Combination of Multiple Operando and In-Situ Characterization Techniques in a Single Cluster System for Atomic Layer Deposition: Unraveling the Early Stages of Growth of Ultrathin Al2O3 Films on Metallic Ti Substrates

IF3

2023-12-145

OA

Monolithic integration of InP nanowires with CMOS fabricated silicon nanotips wafer

PHYSICAL REVIEW MATERIALS

IF3.4

2023-10-193

OA

MBE-based growth of Sn-rich quantum wells and dots at low Sn deposition rates

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-10-011

OAAI

Room Temperature Light Emission from Superatom-like Ge-Core/Si-Shell Quantum Dots

类超原子Ge核/硅壳量子点的室温发光

IF4.3

2023-04-262

OAAI

Titanium Nitride Plasmonic Nanohole Arrays for CMOS-Compatible Integrated Refractive Index Sensing: Influence of Layer Thickness on Optical Properties

IF4.3

2023-03-0911

OA

Subnanometer Control of the Heteroepitaxial Growth of Multimicrometer-Thick Ge/(Si,Ge) Quantum Cascade Structures

PHYSICAL REVIEW APPLIED

IF4.4

2023-01-049

OA

Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition

IF4.3

2022-09-206

OAAI

Reduction of threading dislocation density beyond the saturation limit by optimized reverse grading

PHYSICAL REVIEW MATERIALS

IF3.4

2020-10-2029

OAAI

Strong Electron-Phonon Interaction in 2D Vertical Homovalent III-V Singularities

IF16

2020-09-228

OAAI

Carbon related hillock formation and its impact on the optoelectronic properties of GaN/AlGaN heterostructures grown on Si(111)

APPLIED PHYSICS LETTERS

IF3.6

2020-06-225

PREAI

Advanced Coherent X-ray Diffraction and Electron Microscopy of Individual InP Nanocrystals on Si Nanotips for III-V-on-Si Electronics and Optoelectronics

PHYSICAL REVIEW APPLIED

IF4.4

2019-06-194

PREAI

Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology

ADVANCED FUNCTIONAL MATERIALS

IF19

2019-01-23103

OAAI