Christian Wenger

leibniz institute for high performance microelectronics

H指数:47

被引数:7,724

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Temperature‐Dependent Conduction and Gate‐Tunable Photoresponse in Graphene Photodetectors

温度依赖性导电性和栅极调控的光响应在石墨烯光电探测器中

Advanced Photonics Research

IF3.9

2026-10-090

OAAI

Enabling Quantum-Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO2-Based RRAM From 300 to 1.5 K

实现量子兼容非易失性存储器：300 K至1.5 K范围内1T1R HfO2基RRAM的低温评估

Advanced Electronic Materials

IF5.3

2026-08-140

OAAI

Variability in HfO2-based memristors under pulse operation

Microelectronic Engineering

IF3.1

2026-01-220

OAAI

RRAM-Based Spectral-Domain Convolution Accelerator for Reliable and Energy-Efficient CNN Inference

基于RRAM的频域卷积加速器，用于可靠且能效高的CNN推理

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

IF3.1

2025-12-230

OAAI

Exploring variability and quantization effects in artificial neural networks the MNIST dataset

探索人工神经网络中变异性和量化效应：MNIST数据集

SOLID-STATE ELECTRONICS

IF1.4

2025-12-010

OAAI

Deposition of CeOx/SnOx-Based Thin Films via RF Magnetron Sputtering for Resistive Gas Sensing Applications

通过RF磁控溅射沉积CeOx/SnOx基薄膜用于电阻式气体传感应用

Physica B: Condensed Matter

IF0

2025-11-260

OAAI

ReFFT: An Energy-Efficient RRAM-Based FFT Accelerator

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

IF2.9

2025-10-300

A closed-form model for programming of oxide-based resistive random access memory cells derived from the Stanford model

基于斯坦福模型的氧化物基电阻式随机存取存储器单元编程的封闭式模型

SOLID-STATE ELECTRONICS

IF1.4

2025-09-010

OAAI

End-to-End Design Flow for Resistive Neural Accelerators

电阻神经网络加速器的端到端设计流程

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

IF2.9

2025-08-080

OAAI

Fabrication and Optical Characterization of CMOS-Compatible Honeycomb-Like Large-Scale Lattices of Near-Field Coupled Plasmonic TiN Nanotriangles

CMOS兼容的近场耦合等离子体TiN纳米三角形蜂窝状大规模晶格的制备与光学表征

Advanced Optical Materials

IF7.2

2025-06-140

PREAI

A comprehensive statistical study of the post-programming conductance drift in HfO2-based memristive devices

基于HfO2的忆阻器器件中后编程电导漂移的全面统计分析

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2025-05-300

Demonstration of a Graphene Adjustable-Barriers Phototransistor with Tunable Ultra-High Responsivity

展示一种具有可调谐超高响应度的石墨烯可调势垒光电晶体管

ADVANCED OPTICAL MATERIALS

IF7.2

2025-04-210

OAAI

Optical Response of Titanium Nitride Plasmonic Nanohole Arrays: Impact of Square and Hexagonal Array Geometry, Pitch, and Nanohole Diameter

氮化钛等离激元纳米孔阵列的光学响应：方形和六边形阵列几何形状、间距及纳米孔直径的影响

PLASMONICS

IF4.3

2025-04-040

A Compact One-Transistor-Multiple-RRAM Characterization Platform

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

IF5.2

2025-04-010

PRE

RISC-V CPU Design Using RRAM-CMOS Standard Cells

基于RRAM-CMOS标准单元的RISC-V CPU设计

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

IF3.1

2025-01-010

Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si

ADVANCED MATERIALS INTERFACES

IF4.4

2024-11-280

PRE

Influence of stop and gate voltage on resistive switching of 1T1R HfO2-based memristors, a modeling and variability analysis

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-11-010

OAAI

In Situ X-Ray Photoelectron Spectroscopy Study of Atomic Layer Deposited Cerium Oxide on SiO2: Substrate Influence on the Reaction Mechanism During the Early Stages of Growth

ADVANCED MATERIALS INTERFACES

IF4.4

2024-10-311

OAAI

A flexible and fast digital twin for RRAM systems applied for training resilient neural networks

用于训练弹性神经网络的RRAM系统的灵活快速的数字孪生

SCIENTIFIC REPORTS

IF3.9

2024-10-101

OAAI

Towards a CMOS compatible refractive index sensor: cointegration of TiN nanohole arrays and Ge photodetectors in a 200 mm wafer silicon technology

OPTICS EXPRESS

IF3.3

2024-07-290

Christian Wenger

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