Qixin Guo

Saga University

H指数:47

被引数:9,098

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GeO₂/SiO₂/p-Si Heterojunction Optoelectronic Memristors: A Multifunctional Platform for Solar-Blind UV Detection and Neuromorphic Recognition

GeO₂/SiO₂/p-Si异质结光电器件：用于太阳盲区紫外探测和神经形态识别的多功能平台

Advanced Optical Materials

IF7.2

2026-09-300

PRE

Effect of oxygen plasma power on temperature-dependent crystallization and Er³⁺ luminescence in Er-doped Ga₂O₃ thin films

氧等离子体功率对Er3+掺杂Ga2O3薄膜中温度依赖性结晶和Er3+发光的影响

Materials Research Bulletin

IF5.7

2026-09-070

OAAI

Band alignment of ZnS/ZnTe interface suitable for intermediate band solar cells

ZnS/ZnTe界面带阶对中间带太阳能电池的适用性

Solar Energy Materials and Solar Cells

IF6.3

2026-08-180

OAAI

Structural and luminescent properties of Eu-doped Ga2O3 thin films prepared by plasma-assisted pulsed laser deposition

Eu掺杂Ga2O3薄膜的结构和发光性能，采用等离子体辅助脉冲激光沉积法制备

Journal of Luminescence

IF3.6

2026-07-100

OAAI

Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High-Temperature-Resistant Single-Crystal Aluminum Nitride (0001)

高取向外延六方氮化硼多层膜在耐高温单晶氮化铝(0001)上

Advanced Science

IF14.1

2025-09-290

OAAI

Entropy-stabilized oxides with d10 and s0p0 cations as heterostructured photocatalysts with high work function: Experiments and first-principles calculations

熵稳定氧化物，其具有d10和s0p0阳离子，作为高功函数异质结构光催化剂：实验与第一性原理计算

Journal of Energy Chemistry

IF14.9

2025-08-260

PRE

Effect of substrate temperature and position on properties of Cu 3 N thin films deposited by reactive radio frequency magnetron sputtering

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-11-010

PRE

Synchrotron radiation excited luminescence of Eu, Er, and Tm codoped β-Ga2O3 thin film

JOURNAL OF LUMINESCENCE

IF3.6

2024-10-010

PRE

Temperature dependence of crystalline quality in MgGa2O4 films by oxygen radicals-assisted pulsed laser deposition

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-08-010

PRE

Oxygen vacancy-rich high-pressure rocksalt phase of zinc oxide for enhanced photocatalytic hydrogen evolution

JOURNAL OF COLLOID AND INTERFACE SCIENCE

IF9.7

2024-07-0112

PRE

Low-temperature photoluminescence characteristic of Tm-doped Ga2O3 films for light emitting diodes application

OPTICAL MATERIALS

IF4.2

2024-04-011

PRE

Temperature-dependent photoluminescence of r-GeO2 film deposited on r-plane sapphire by synchrotron radiation excitation

JOURNAL OF LUMINESCENCE

IF3.6

2024-03-016

PRE

Enhancement of photoluminescence from Tm-doped (AlxGa1_x)2O3 films by pulsed laser deposition

CERAMICS INTERNATIONAL

IF5.6

2023-09-013

PRE

Low temperature growth of MgGa2O4 films for deep ultraviolet photodetectors

OPTICAL MATERIALS

IF4.2

2023-09-016

PRE

Color-Tunable Light-Emitting Diodes Based on Rare Earth Doped Gallium Oxide Films

基于稀土掺杂氧化镓薄膜的可调色发光二极管

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-07-1810

PRE

Room-temperature synthesized amorphous P-type transparent Ga2O3-Cu2S alloy thin films with tunable optoelectronic properties

APPLIED SURFACE SCIENCE

IF6.9

2023-04-015

PRE

Spatially resolved Raman piezospectroscopy for nondestructive evaluation of residual stress in β-Ga2O3 films

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2023-03-021

PRE

Optoelectronic properties and ultrafast carrier dynamics of copper iodide thin films

NATURE COMMUNICATIONS

IF15.7

2022-10-2621

OAAI

Enhanced CO2 conversion on highly-strained and oxygen-deficient BiVO4 photocatalyst

CHEMICAL ENGINEERING JOURNAL

IF13.2

2022-08-0143

Strong enhancement of red photoluminescence from Eu doped Ga2O3 films by thermal annealing

JOURNAL OF LUMINESCENCE

IF3.6

2022-06-018

PRE

Qixin Guo

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