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Lars‐Erik Wernersson

Lund University

49H指数
436论文数
8.4K被引数
收录论文 88
发表时间
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Compound Semiconductors
errPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
IF1.9
err2025-11-01
err0
PREAI
errLind, Erik; Wernersson, Lars-erik; Borgstrom, Magnus
err分享
err收藏
Memory State Dynamics in BEOL FeFETs: Impact of Area Ratio on Analog Write Mechanisms and Charging
errIEEE ACCESS
IF3.6
err2025-01-01
err0
errOAAI
errDahlberg, Hannes; Kaatranen, Oscar; Persson, Karl-Magnus; Rantala, Arto; Flak, Jacek; Wernersson, Lars-Erik
err分享
err收藏
III-V heterostructure tunnel field-effect transistor operation at different temperature regimes
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-11-04
err0
errOAAI
errKrishnaraja, Abinaya; Zhu, Zhongyunshen; Svensson, Johannes; Wernersson, Lars-Erik
err分享
err收藏
Multifunctional Reconfigurable Operations in an Ultra-Scaled Ferroelectric Negative Transconductance Transistor
errACS NANO
IF16
err2024-10-11
err0
errOAAI
errZhu, Zhongyunshen; Persson, Anton E. O.; Wernersson, Lars-Erik
err分享
err收藏
Geometric control of diffusing elements on InAs semiconductor surfaces via metal contacts
errNATURE COMMUNICATIONS
IF15.7
err2023-07-27
err1
errOAAI
errBenter, Sandra; Jonsson, Adam; Johansson, Jonas; Zhu, Lin; Golias, Evangelos; Wernersson, Lars-Erik; Mikkelsen, Anders
err分享
err收藏
Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
errNATURE COMMUNICATIONS
IF15.7
err2023-05-03
err14
errOAAI
errZhu, Zhongyunshen; Persson, Anton E. O.; Wernersson, Lars-Erik
err分享
err收藏
Sensing single domains and individual defects in scaled ferroelectrics
errSCIENCE ADVANCES
IF12.5
err2023-02-03
err7
errOAAI
errZhu, Zhongyunshen; Persson, Anton E. O.; Wernersson, Lars -Erik
err分享
err收藏
High Current Density Vertical Nanowire TFETs With I60>1μA/μm
errIEEE ACCESS
IF3.6
err2023-01-01
err12
errOAAI
errRangasamy, Gautham; Zhu, Zhongyunshen; Wernersson, Lars-Erik
err分享
err收藏
Ferroelectric-Antiferroelectric Transition of Hf1-XZrXO2 on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2砷化铟上Hf1-XZrXO2的铁电-反铁电转变，对Hf0.2Zr0.8O2具有增强的铁电特性
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2022-12-14
err9
errOAAI
errDahlberg, Hannes; Persson, Anton E. O.; Athle, Robin; Wernersson, Lars-Erik
err分享
err收藏
Improved Endurance of Ferroelectric HfxZr1-xO2 Integrated on InAs Using Millisecond Annealing使用毫秒退火提高集成在InAs上的铁电HfxZr1-xO2的耐久性
errADVANCED MATERIALS INTERFACES
IF4.4
err2022-08-23
err12
errOAAI
errAthle, Robin; Blom, Theodor; Irish, Austin; Persson, Anton E. O.; Wernersson, Lars-Erik; Timm, Rainer; Borg, Mattias
err分享
err收藏
Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
errAPPLIED SURFACE SCIENCE
IF6.9
err2022-08-01
err7
errOAAI
errLiu, Yen-Po; Yngman, Sofie; Troian, Andrea; D'Acunto, Giulio; Jonsson, Adam; Svensson, Johannes; Mikkelsen, Anders; Wernersson, Lars-Erik; Timm, Rainer
err分享
err收藏
As-deposited ferroelectric HZO on a III-V semiconductor
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-07-06
err4
errOAAI
errAndersen, Andre; Persson, Anton E. O.; Wernersson, Lars-Erik
err分享
err收藏
Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2022-01-10
err11
errOAAI
errZhu, Zhongyunshen; Jonsson, Adam; Liu, Yen-Po; Svensson, Johannes; Timm, Rainer; Wernersson, Lars-Erik
err分享
err收藏
Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction (vol 12, pg 14487, 2020)
errNANOSCALE
IF5.1
err2022-01-01
err0
errOAAI
errDzhigaev, Dmitry; Svensson, Johannes; Krishnaraja, Abinaya; Zhu, Zhongyunshen; Ren, Zhe; Liu, Yi; Kalbfleisch, Sebastian; Bjorling, Alexander; Lenrick, Filip; Balogh, Zoltan Imre; Hammarberg, Susanna; Wallentin, Jesper; Timm, Rainer; Wernersson, Lars-Erik; Mikkelsen, Anders
err分享
err收藏
High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon使用硅上的垂直砷化铟纳米线的高密度逻辑存储器件
errNATURE ELECTRONICS
IF40.9
err2021-12-21
err30
PREAI
errRam, Mamidala Saketh; Persson, Karl-Magnus; Irish, Austin; Jonsson, Adam; Timm, Rainer; Wernersson, Lars-Erik
err分享
err收藏
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2021-11-19
err6
errOAAI
errJonsson, Adam; Svensson, Johannes; Fiordaliso, Elisabetta Maria; Lind, Erik; Hellenbrand, Markus; Wernersson, Lars-Erik
err分享
err收藏
Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering通过TiN底部电极和界面工程调节超薄HfO2 RRAM中的氧空位和电阻开关特性
errAPPLIED SURFACE SCIENCE
IF6.9
err2021-06-01
err73
errOAAI
errYong, Zhihua; Persson, Karl-Magnus; Ram, Mamidala Saketh; D'Acunto, Giulio; Liu, Yi; Benter, Sandra; Pan, Jisheng; Li, Zheshen; Borg, Mattias; Mikkelsen, Anders; Wernersson, Lars-Erik; Timm, Rainer
err分享
err收藏
A method for estimating defects in ferroelectric thin film MOSCAPs
errAPPLIED PHYSICS LETTERS
IF3.6
err2020-12-15
err15
errOAAI
errPersson, Anton E. O.; Athle, Robin; Svensson, Johannes; Borg, Mattias; Wernersson, Lars-Erik
err分享
err收藏
Tuning of Source Material for InAs/InGaAsSb/GaSb ApplicationSpecific Vertical Nanowire Tunnel FETs
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2020-09-01
err20
PREAI
errKrishnaraja, Abinaya; Svensson, Johannes; Memisevic, Elvedin; Zhu, Zhongyunshen; Persson, Axel R.; Lind, Erik; Wallenberg, Lars Reine; Wernersson, Lars-Erik
err分享
err收藏
Compressively-strained GaSb nanowires with core-shell heterostructures具有核壳异质结构的压缩应变GaSb纳米线
errNANO RESEARCH
IF9
err2020-06-19
err15
errOAAI
errZhu, Zhongyunshen; Svensson, Johannes; Persson, Axel R.; Wallenberg, Reine; Gromov, Andrei V.; Wernersson, Lars-Erik
err分享
err收藏

研究方向

暂无研究方向
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