Fabian Ducry - Publications, H-index & Citations

Fabian Ducry

ETH Zurich

11H指数

36论文数

1.2K被引数

收录论文 13

发表时间

Oxide induced degradation in MoS2 field-effect transistors 氧化物诱导的退化在MoS2场效应晶体管中

npj 2D Materials and Applications

IF8.8

2026-03-11

OAAI

Fabian Ducry; Benoit Van Troeye; Mauro Dossena; Mathieu Luisier; Geoffrey Pourtois; Aryan Afzalian

Mobility calculation in disordered WS2-Al2O3 stacks from first principles 无序WS2-Al2O3堆叠的迁移率第一性原理计算

npj 2D Materials and Applications

IF8.8

2025-08-01

OAAI

Mauro Dossena; Benoit Van Troeye; Fabian Ducry; Jiang Cao; Aryan Afzalian; Geoffrey Pourtois; Mathieu Luisier

Impact of Interface and Surface Oxide Defects on WS2 Electronic Properties from First Principles 界面和表面氧化物缺陷对WS2电子性质的影响：第一性原理研究

ACS NANO

IF16

2025-03-18

PREAI

Van Troeye, B; Ducry, F; Dossena, M; Luisier, M; Afzalian, A; Pourtois, G

Multiscale Modeling of Metal-Oxide-Metal Conductive Bridging Random-Access Memory Cells: From Ab Initio to Finite-Element Calculations 金属-氧化物-金属导电桥接随机存取存储器单元的多尺度建模: 从从头计算到有限元计算

PHYSICAL REVIEW APPLIED

IF4.4

2023-02-22

PREAI

Aeschlimann, Jan; Ducry, Fabian; Weilenmann, Christoph; Leuthold, Juerg; Emboras, Alexandros; Luisier, Mathieu

An ab initio study on resistance switching in hexagonal boron nitride

NPJ 2D MATERIALS AND APPLICATIONS

IF8.8

2022-09-05

OAAI

Ducry, Fabian; Waldhoer, Dominic; Knobloch, Theresia; Csontos, Miklos; Jimenez Olalla, Nadia; Leuthold, Juerg; Grasser, Tibor; Luisier, Mathieu

Influence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS2 Transistors

MATERIALS

IF3.2

2022-01-29

OAAI

Fiore, Sara; Klinkert, Cedric; Ducry, Fabian; Backman, Jonathan; Luisier, Mathieu

The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials 基于二维材料的六角形氮化硼作为缩放CMOS器件绝缘体的性能极限

NATURE ELECTRONICS

IF40.9

2021-02-23

217

PREAI

Knobloch, Theresia; Illarionov, Yury Yu.; Ducry, Fabian; Schleich, Christian; Wachter, Stefan; Watanabe, Kenji; Taniguchi, Takashi; Mueller, Thomas; Waltl, Michael; Lanza, Mario; Vexler, Mikhail I.; Luisier, Mathieu; Grasser, Tibor

Opto-electronic memristors: Prospects and challenges in neuromorphic computing

APPLIED PHYSICS LETTERS

IF3.6

2020-12-08

PREAI

Emboras, Alexandros; Alabastri, Alessandro; Lehmann, Paul; Portner, Kevin; Weilenmann, Christoph; Ma, Ping; Cheng, Bojun; Lewerenz, Mila; Passerini, Elias; Koch, Ueli; Aeschlimann, Jan; Ducry, Fabian; Leuthold, Juerg; Luisier, Mathieu

Hybrid Mode-Space-Real-Space Approximation for First-Principles Quantum Transport Simulation of Inhomogeneous Devices 非均匀器件第一性原理量子输运模拟的混合模-空间-实-空间近似

PHYSICAL REVIEW APPLIED

IF4.4

2020-04-27

PREAI

Ducry, Fabian; Bani-Hashemian, Mohammad Hossein; Luisier, Mathieu

Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching

COMMUNICATIONS PHYSICS

IF5.8

2019-03-07

OAAI

Cheng, Bojun; Emboras, Alexandros; Salamin, Yannick; Ducry, Fabian; Ma, Ping; Fedoryshyn, Yuriy; Andermatt, Samuel; Luisier, Mathieu; Leuthold, Juerg

Microcanonical RT-TDDFT simulations of realistically extended devices

JOURNAL OF CHEMICAL PHYSICS

IF3.1

2018-09-24

PREAI

Andermatt, Samuel; Bani-Hashemian, Mohammad Hossein; Ducry, Fabian; Bruck, Sascha; Clima, Sergiu; Pourtois, Geoffrey; VandeVondele, Joost; Luisier, Mathieu

Atomic Scale Photodetection Enabled by a Memristive Junction 由忆阻结实现的原子尺度光电探测

ACS NANO

IF16

2018-06-25

PREAI

Emboras, Alexandros; Alabastri, Alessandro; Ducry, Fabian; Cheng, Bojun; Salamin, Yannick; Ma, Ping; Andermatt, Samuel; Baeuerle, Benedikt; Josten, Arne; Hafner, Christian; Luisier, Mathieu; Nordlander, Peter; Leuthold, Juerg

All-plasmonic Mach-Zehnder modulator enabling optical high-speed communication at the microscale 全等离子体马赫-曾德尔调制器实现微尺度的光学高速通信

NATURE PHOTONICS

IF32.9

2015-07-27

518

PREAI

Haffner, C.; Heni, W.; Fedoryshyn, Y.; Niegemann, J.; Melikyan, A.; Elder, D. L.; Baeuerle, B.; Salamin, Y.; Josten, A.; Koch, U.; Hoessbacher, C.; Ducry, F.; Juchli, L.; Emboras, A.; Hillerkuss, D.; Kohl, M.; Dalton, L. R.; Hafner, C.; Leuthold, J.

研究方向