Tibor Grasser - Publications, H-index & Citations

Tibor Grasser

tu wien

59H指数

756论文数

1.7W被引数

收录论文 76

发表时间

Author Correction: Industrial reliability testing of transistor gate dielectrics 作者更正: 晶体管栅极电介质的工业可靠性测试

Nature Electronics

IF40.9

2026-07-30

PREAI

Ernest Y. Wu; Tibor Grasser; Mario Lanza

An Efficient SPICE Framework for Simulation of BTI Effects at the Circuit Level 用于电路级BTI效应仿真的高效SPICE框架

IEEE Access

IF3.6

2026-07-17

OAAI

Josef Salzmann; Alexander Karl; Dominic Waldhör; Tibor Grasser; Michael Waltl

Quantum tunnelling and leakage current across two-dimensional materials 二维材料中的量子隧穿和漏电流

Nature Materials

IF38.5

2026-07-01

PREAI

Yue Yuan; Francesco Maria Puglisi; Andrea Padovani; Christoph Reuter; Tingting Han; Daria Belotcerkovtceva; Iakov Reznikov; Alexey Berdyugin; Yaqing Shen; Mahdi Pourfath; Theresia Knobloch; Marco A. Villena; Lukas Völkel; Max C. Lemme; Tibor Grasser; Deji Akinwande; Mario Lanza

Industrial reliability testing of transistor gate dielectrics 晶体管栅极介质的工业可靠性测试

Nature Electronics

IF40.9

2026-06-24

PREAI

Ernest Y. Wu; Tibor Grasser; Mario Lanza

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials 由二维材料中形成的范德华间隙带来的器件缩放限制

Science

IF45.8

2026-04-16

PREAI

Mahdi Pourfath; Tibor Grasser

Near-zero hysteresis van der Waals MnAl2S4 field-effect transistors with low minimal threshold voltage degradation and high thermal stability 近零迟滞范德华MnAl₂S₄场效应晶体管，具有低最小阈值电压衰减和高热稳定性

Communications Materials

IF9.6

2026-01-09

OAAI

Seyed Mehdi Sattari-Esfahlan; Yury Illarionov; Fang Xu; Alexandros Provias; Saeed Mirzaei; Jan Michalička; Theresia Knobloch; Ondřej Man; Yangbo Zhou; Tibor Grasser

Impact of doping and channel inhomogeneities on the stability of industrially fabricated WS2 FETs 掺杂和沟道不均匀性对工业制备的WS2 FETs稳定性的影响

npj 2D Materials and Applications

IF8.8

2025-12-12

OAAI

L. Panarella; B. Kaczer; Q. Smets; T. Nuytten; B. Van Troeye; S. Tyaginov; P. Saraza-Canflanca; T. Grasser; C. Lockhart de la Rosa; G. S. Kar; V. Afanas’ev

Evaluation of the robustness of the defect-centric model for defect parameter extraction from RTN and BTI analysis using Comphy 使用Comphy通过RTN和BTI分析评估缺陷中心模型在缺陷参数提取中的鲁棒性

Microelectronic Engineering

IF3.1

2025-12-05

OAAI

Martin E.M. Loesener; Tobias Zinsler; Bernhard Stampfer; Florian Wimmer; Eleftherios Ioannidis; Walter Pflanzl; Rainer Minixhofer; Tibor Grasser; Michael Waltl

A standardized approach to characterize hysteresis in 2D-materials-based transistors for stability benchmarking and performance projection 一种标准化的方法来表征基于2d材料的晶体管中的磁滞，以进行稳定性基准测试和性能预测

Nature Communications

IF15.7

2025-11-21

OAAI

Alexander Karl; Axel Verdianu; Dominic Waldhoer; Theresia Knobloch; Joël Kurzweil; Mina Bahrami; Mohammad Rasool Davoudi; Pedram Khakbaz; Bernhard Stampfer; Seyed Mehdi Sattari-Esfahlan; Yury Illarionov; Aftab Nazir; Changze Liu; Yu Zheng; Lorenzo Pettorosso; Dmitry Polyushkin; Thomas Müller; Saptarshi Das; Xiao Renshaw Wang; Junchuan Tang; Yichi Zhang; Congwei Tan; Ye Li; Hailin Peng; Michael Waltl; Tibor Grasser

Compact I–V Model for Double-Gated MoS₂ FETs Including Short-Channel Effects 考虑短沟道效应的双栅MoS₂ FETs紧凑型I–V模型

IEEE Transactions on Electron Devices

IF3.2

2025-11-14

PREAI

Ahmed Mounir; François Lime; Alexander Kloes; Alexandros Provias; Theresia Knobloch; K. P. O'Brien; Tibor Grasser; Benjamin Iñiguez

Stability and Reliability of van der Waals High-κ SrTiO3 Field-Effect Transistors with Small Hysteresis 范德华高-κ SrTiO3 场效应晶体管的稳定性和可靠性研究（具有较小滞后现象）

ACS NANO

IF16

2025-03-19

PREAI

Sattari-Esfahlan, SM; Yang, AJ; Ghosh, R; Zheng, WW; Rzepa, G; Knobloch, T; Lanza, M; Wang, XR; Grasser, T

Two-dimensional Bi2SeO2 and Its Native Insulators for Next-Generation Nanoelectronics 二维Bi2SeO2及其本征绝缘体用于下一代纳电子学

ACS NANO

IF16

2025-03-05

PREAI

Khakbaz, P; Waldhoer, D; Bahrami, M; Knobloch, T; Pourfath, M; Davoudi, MR; Zhang, YC; Gao, XY; Peng, HL; Waltl, M; Grasser, T

Enormous Out-of-Plane Charge Rectification and Conductance through Two-Dimensional Monolayers 巨面外电荷整流和通过二维单层的电导

ACS NANO

IF16

2025-01-15

PREAI

Cabanillas, A; Shahi, S; Liu, MM; Jaiswal, HN; Wei, SC; Fu, Y; Chakravarty, A; Ahmed, A; Liu, XC; Sun, J; Yang, C; Yoo, WJ; Knobloch, T; Perebeinos, V; Di Bartolomeo, A; Grasser, T; Yao, F; Li, HM

Comprehensive study of SrF2 growth on highly oriented pyrolytic graphite (HOPG): Temperature-dependent van der Waals epitaxy

APPLIED SURFACE SCIENCE

IF6.9

2025-01-01

OAAI

Borghi, Mauro; Giovanelli, Giulia; Montecchi, Monica; Capelli, Raffaella; Mescola, Andrea; Paolicelli, Guido; D'Addato, Sergio; Grasser, Tibor; Pasquali, Luca

Coherence limit due to hyperfine interaction with nuclei in the barrier material of Si spin qubits 由于与Si自旋量子位的势垒材料中的原子核的超精细相互作用而导致的相干极限

PHYSICAL REVIEW APPLIED

IF4.4

2024-12-24

PREAI

Cvitkovich, Lukas; Stano, Peter; Wilhelmer, Christoph; Waldhoer, Dominic; Loss, Daniel; Niquet, Yann-Michel; Grasser, Tibor

A stochastic encoder using point defects in two-dimensional materials

NATURE COMMUNICATIONS

IF15.7

2024-12-04

OAAI

Ravichandran, Harikrishnan; Knobloch, Theresia; Subbulakshmi Radhakrishnan, Shiva; Wilhelmer, Christoph; Stepanoff, Sergei P.; Stampfer, Bernhard; Ghosh, Subir; Oberoi, Aaryan; Waldhoer, Dominic; Chen, Chen; Redwing, Joan M.; Wolfe, Douglas E.; Grasser, Tibor; Das, Saptarshi

Photonic Neuron With on Frequency-Domain ReLU Activation Function

JOURNAL OF LIGHTWAVE TECHNOLOGY

IF4.8

2024-11-15

PREAI

Stephanie, Margareta Vania; Pham, Lam; Schindler, Alexander; Grasser, Tibor; Waltl, Michael; Schrenk, Bernhard

Machine learning force field for thermal oxidation of silicon

JOURNAL OF CHEMICAL PHYSICS

IF3.1

2024-10-10

OAAI

Cvitkovich, Lukas; Fehringer, Franz; Wilhelmer, Christoph; Milardovich, Diego; Waldhoer, Dominic; Grasser, Tibor

Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs

PHYSICAL REVIEW APPLIED

IF4.4

2024-08-30

OAAI

Feil, Maximilian W.; Weger, Magdalena; Reisinger, Hans; Aichinger, Thomas; Kabakow, Andre; Waldhoer, Dominic; Jakowetz, Andreas C.; Prigann, Sven; Pobegen, Gregor; Gustin, Wolfgang; Waltl, Michael; Bockstedte, Michel; Grasser, Tibor

Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy

NATURE ELECTRONICS

IF40.9

2024-08-26

PREAI

Shen, Yaqing; Zhu, Kaichen; Xiao, Yiping; Waldhoer, Dominic; Basher, Abdulrahman H.; Knobloch, Theresia; Pazos, Sebastian; Liang, Xianhu; Zheng, Wenwen; Yuan, Yue; Roldan, Juan B.; Schwingenschloegl, Udo; Tian, He; Wu, Huaqiang; Schranghamer, Thomas F.; Trainor, Nicholas; Redwing, Joan M.; Das, Saptarshi; Grasser, Tibor; Lanza, Mario

研究方向