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G

Gaudenzio Meneghesso

universite grenoble alpes (uga)

62H指数
1.1K论文数
2.0W被引数
收录论文 95
发表时间
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720 V quasi-vertical GaN-on-silicon p-n diodes with surge capability fabricated using selective area growth720 V准垂直硅上GaN p–n二极管，具有浪涌能力，采用选择性区域生长方法制备
errJOURNAL OF APPLIED PHYSICS
IF2.5
err2025-12-07
err0
PREAI
errEl Amrani, Mohammed; Lyu, Junrui; Wen, Xinyi; Marcuzzi, Alberto; Plaza Arguello, David; M'qaddem, Zakariae; Kaltsounis, Thomas; El Rammouz, Hala; Meneghesso, Gaudenzio; Meneghini, Matteo; Charles, Matthew; Buckley, Julien; Chowdhury, Srabanti
err分享
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Experimental Evidence of Sustainable Avalanche Operation in E-Mode GaN HEMTsE-模式GaN HEMTs中可持续雪崩运行模式的实验证据
errIEEE Electron Device Letters
IF4.5
err2025-11-13
err0
errOAAI
errRiccardo Fraccaroli; Matteo Dell'Andrea; Manuel Fregolent; Mirco Boito; Simone Leonardo Longato; Carlo De Santi; Isabella Rossetto; Enrico Zanoni; Gaudenzio Meneghesso; Alessio Pirani; Giansalvo Pizzo; Cristina Miccoli; Alfio Russo; Maria Eloisa Castagna; Ferdinando Iucolano; Matteo Meneghini
err分享
err收藏
Deep-Level Effects in Back-Barrier-Scaled GaN HEMTs背势垒GaN hemt中的深层效应
errIEEE Transactions on Microwave Theory and Techniques
IF4.5
err2025-10-30
err0
PREAI
errFrancesco De Pieri; Andrea Carlotto; Manuel Fregolent; Alberto Cavaliere; Marco Saro; Fabiana Rampazzo; Carlo De Santi; Veronica Gao Zhan; Gaudenzio Meneghesso; Matteo Meneghini; Enrico Zanoni
err分享
err收藏
Fe(III)-Mediated Formation of Cu Nanoinclusions and Local Heterojunctions in CuWO4 PhotoanodesFe(III)介导的CuWO4光阳极中Cu纳米内含物和局部异质结的形成
errAdvanced Materials Interfaces
IF4.4
err2025-08-15
err0
errOAAI
errPietro Ostellari; Serge Benedoue; Diego Zamboni; Andrea Basagni; Sharon Silloni; Enrico Scattolin; Matteo Lorenzoni; Robertino Pilot; Ilaria Fortunati; Simone Lauciello; Mengjiao Wang; Mirko Prato; Julius N. Ndi; Francesca Arcudi; Luka Đorđević; Gaudenzio Meneghesso; Silvia Gross; Lorenzo Franco; Gian-andrea Rizzi; Teresa Gatti; Francesco Lamberti
err分享
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Solid State Lighting Systems for Horticulture: Impact of LED Degradation on Light Spectrum and Intensity园艺用固态照明系统：LED老化对光光谱和光强度的影响
errIEEE Transactions on Industry Applications
IF4.5
err2025-07-01
err0
PREAI
errNicola Trivellin; Matteo Buffolo; Alessandro Caria; Carlo De Santi; Giulia Pierobon; Riccardo Fraccaroli; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini
err分享
err收藏
Systematic analysis of the trapping and reliability of Al2O3/GaN MOS capacitors with different atomic layer deposition techniques不同原子层沉积技术下Al2O3/GaN MOS电容器的陷阱与可靠性系统分析
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2025-05-18
err0
errOAAI
errFregolent, Manuel; Tomasi, Marco; De Santi, Carlo; Buffolo, Matteo; Tadmor, Liad; Brusaterra, Enrico; Treidel, Eldad Bahat; Cester, Andrea; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
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Modeling the capacitance-voltage characteristics of AlGaN-based UV-C LEDs基于AlGaN的UV-C LED电容-电压特性建模
errSCIENTIFIC REPORTS
IF3.9
err2025-04-18
err0
errOAAI
errRoccato, Nicola; Piva, Francesco; Buffolo, Matteo; De Santi, Carlo; Trivellin, Nicola; Schilling, Marcel; Muhin, Anton; Hoepfner, Jakob; Guttmann, Martin; Wernicke, Tim; Kneissl, Michael; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
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Degradation of 1.3 μm Quantum Dot Laser Diodes for Silicon Photonics: Dependence on the Number of Dot-in-a-Well Layers用于硅光子学的1.3 μ m量子点激光二极管的退化: 取决于阱中的点层数
errIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
IF5.1
err2025-03-01
err0
PREAI
errZenari, Michele; Gioannini, Mariangela; Buffolo, Matteo; Tibaldi, Alberto; De Santi, Carlo; Norman, Justin; Shang, Chen; Dumont, Mario; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
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err收藏
Impact of the Oxide Aperture Width on the Degradation of 845 Nm VCSELs for Silicon Photonics
errIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
IF5.1
err2025-03-01
err0
PREAI
errZenari, Michele; Buffolo, Matteo; Rampazzo, Fabiana; De Santi, Carlo; Rossi, Francesca; Lazzarini, Laura; Goyvaerts, Jeroen; Grabowski, Alexander; Gustavsson, Johan S.; Baets, Roel; Larsson, Anders; Roelkens, Gunther; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
err分享
err收藏
Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2024-11-01
err0
errOAAI
errZagni, Nicolo; Fregolent, Manuel; Verzellesi, Giovanni; Bergamin, Francesco; Favero, Davide; De Santi, Carlo; Meneghesso, Gaudenzio; Zanoni, Enrico; Huber, Christian; Meneghini, Matteo; Pavan, Paolo
err分享
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Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications面向下一代毫米波应用的新兴GaN技术
errIEEE MICROWAVE MAGAZINE
IF2.6
err2024-10-01
err2
PREAI
errMedjdoub, Farid; Shinohara, Keisuke; Thome, Fabian; Moon, Jeong-sun; Chumbes, Eduardo; Guidry, Matthew T.; Mishra, Umesh; Zanoni, Enrico; Meneghini, Matteo; Meneghesso, Gaudenzio; Pomeroy, James W.; Thingujam, Terirama; Kuball, Martin
err分享
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Investigation and modeling of the role of interface defects in the optical degradation of InGaN/GaN LEDs
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2024-08-29
err0
errOAAI
errRoccato, Nicola; Piva, Francesco; Buffolo, Matteo; Santi, Carlo De; Trivellin, Nicola; Haller, Camille; Carlin, Jean-Francois; Grandjean, Nicolas; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
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Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2024-08-08
err5
errOAAI
errFregolent, Manuel; Piva, Francesco; Buffolo, Matteo; De Santi, Carlo; Cester, Andrea; Higashiwaki, Masataka; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
err分享
err收藏
Origin and Recovery of Negative V TH Shift on 4H-SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2024-07-01
err0
errOAAI
errMarcuzzi, A.; Avramenko, M.; De Santi, C.; Geenen, F.; Moens, P.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
err分享
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Positive VTH Shift in Schottky p-GaN Gate Power HEMTs: Dependence on Temperature, Bias and Gate Leakage肖特基p-gan栅极功率hemt中的正VTH偏移: 对温度，偏置和栅极泄漏的依赖性
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2024-06-01
err1
errOAAI
errModolo, Nicola; De Santi, Carlo; Sicre, Sebastien; Minetto, Andrea; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
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Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization
errACS PHOTONICS
IF6.7
err2023-11-11
err2
errOAAI
errZenari, Michele; Buffolo, Matteo; De Santi, Carlo; Norman, Justin; Hughes, Eamonn T.; Bowers, John E.; Herrick, Robert; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
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Analysis of CdSe as an alternative buffer layer for Sb2Se3 solar cells
errSOLAR ENERGY
IF6.6
err2023-11-01
err8
errOAAI
errTorabi, Narges; Artegiani, Elisa; Gasparotto, Andrea; Piccinelli, Fabio; Meneghini, Matteo; Meneghesso, Gaudenzio; Romeo, Alessandro
err分享
err收藏
Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-09-07
err3
errOAAI
errFregolent, Manuel; Brusaterra, Enrico; De Santi, Carlo; Tetzner, Kornelius; Wurfl, Joachim; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
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How the selenium distribution in CdTe affects the carrier properties of CdSeTe/CdTe solar cells
errSOLAR ENERGY
IF6.6
err2023-08-01
err4
errOAAI
errArtegiani, Elisa; Gasparotto, Andrea; Meneghini, Matteo; Meneghesso, Gaudenzio; Romeo, Alessandro
err分享
err收藏
Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-05-04
err9
errOAAI
errPiva, F.; Pilati, M.; Buffolo, M.; Roccato, N.; Susilo, N.; Vidal, D. Hauer; Muhin, A.; Sulmoni, L.; Wernicke, T.; Kneissl, M.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
err分享
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研究方向

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H 指数: 108 · 论文数: 1.2K
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