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A

Andrew L. Johnson

university of bath
H指数:33
被引数:3,551

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Challenges in ALD precursor design: mechanism of intramolecular C–H activation by internal deprotonation of tin(ii) precursors

ALD前驱体设计中的挑战：锡(II)前驱体内部去质子化引发的分子内C–H键活化机制

Dalton Transactions
IF3.3
2026-08-110
PRE
Joe C. Goodall Corresponding Author; Agustín Morales; Samuel H. Foote; Oliver W. S. Clark; Benjamin J. Peek; Craig M. Robertson; Paul R. Chalker; Claire L. McMullin Corresponding Author; Andrew L. Johnson Corresponding Author
Atomic Layer Deposition of Disordered p-Type SnO Using a Heteroleptic Tin(II) Precursor: Influence of Disorder on P-Channel SnO Thin-Film Transistor Characteristics

采用异配位锡(II)前驱体的无序p型SnO原子层沉积：无序对p沟道SnO薄膜晶体管特性的影响

Advanced Electronic Materials
IF5.3
2026-04-200
OAAI
Benjamin J. Peek; Kham Man Niang; Benjamin McMitchell; Heath Bagshaw; Karl Dawson; Adrian Gardner; Babak Bakhit; James D. Parish; Oliver W. S. Clark; Joe C. Goodall; Andrew Brookes; Satyajit Das; Feras Alkhalil; Andrew L. Johnson; Andrew J. Flewitt; Paul R. Chalker

研究方向

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G
Gabriele Kociok‐Köhn
H 指数:57论文数:1,474被引数:1.2万
J
James D. Parish
H 指数:8论文数:78被引数:222
M
Michael S. Hill
H 指数:65论文数:943被引数:1.3万
K
Kieran C. Molloy
H 指数:40论文数:520被引数:6,455
P
Paul R. Raithby
H 指数:63论文数:2,407被引数:2.4万
A
A.J. Kingsley
H 指数:14论文数:116被引数:645
M
Matthew G. Davidson
H 指数:48论文数:337被引数:1.0万
M
Mary F. Mahon
H 指数:69论文数:1,228被引数:2.0万
I
Ibbi Y. Ahmet
H 指数:21论文数:85被引数:1,366
S
Stephen P. Richards
H 指数:13论文数:28被引数:825