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R

Robert M. Wallace

University College Cork
H指数:91
被引数:4.6万
浏览量:0

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Hydrogen Peroxide-Enabled High-Quality Transition Interface for Top-Gated Molybdenum Disulfide Field-Effect Transistors

过氧化氢辅助的高质量过渡界面在顶栅二硫化钼场效应晶体管中的应用

ACS Nano
IF16
2026-06-120
PRE
Minjong Lee; Thi Thu Huong Chu; Si Eun Yu; Doo San Kim; Dan N. Le; Inhong Hwang; Dushyant M. Narayan; Soham Shirodkar; Sihoon Son; Ji Eun Kang; Hyunbin Choi; Sun Jae Jeong; Rino Choi; Taesung Kim; Geun Young Yeom; Robert M. Wallace; Jiyoung Kim
Ozone Surface Pretreatment for Enhanced β-Ga2O3/Dielectric Interface Engineering

臭氧表面预处理以增强β-Ga2O3/介质界面工程

ACS Applied Materials & Interfaces
IF0
2026-05-290
PRE
Joy Roy; Adam A. Gruszecki; Khushabu S. Agrawal; Paolo La Torraca; Karim Cherkaoui; Paul K. Hurley; Chadwin D. Young; Robert M. Wallace
Vapor-Flux Growth of c-BP Single Crystals With Concurrently High Electrical Resistivity and Isotope-Enhanced High Thermal Conductivity

同时具有高电阻率和同位素增强的高热导率的c-bp单晶的蒸气通量生长

Advanced Materials
IF26.8
2026-01-120
OA
Yulin Zhu; Aswin L. N. Kondusamy; Ke Chen; Pawan Koirala; Hanlin Wu; Mahammed S. Patel; Evan R. Glaser; Sam White; James C. Culbertson; John L. Lyons; Navaneetha K. Ravichandran; Mohamed Zetati; Xinglu Wang; Rafik Addou; Robert M. Wallace; Songrui Hou; Sam Vaziri; Xinyu Bao; David Broido; Gang Chen; Bing Lv
Fundamental Understanding of Interface Chemistry and Electrical Contact Properties of Bi and MoS2
ACS APPLIED MATERIALS & INTERFACES
IF8.2
2024-09-240
PRE
Kim, Seong Yeoul; Sun, Zheng; Roy, Joy; Wang, Xinglu; Chen, Zhihong; Appenzeller, Joerg; Wallace, Robert M.
Mechanism of Fermi Level Pinning for Metal Contacts on Molybdenum Dichalcogenide (vol 16, pg 13258, 2024)
ACS APPLIED MATERIALS & INTERFACES
IF8.2
2024-08-190
OA
Wang, Xinglu; Hu, Yaoqiao; Kim, Seong Yeoul; Cho, Kyeongjae; Wallace, Robert M.
Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

通过CMOS兼容的金属触点实现的单层MoS2场效应晶体管上的低接触电阻

ACS NANO
IF16
2024-08-074
PRE
Sun, Zheng; Kim, Seong Yeoul; Cai, Jun; Shen, Jianan; Lan, Hao-Yu; Tan, Yuanqiu; Wang, Xinglu; Shen, Chao; Wang, Haiyan; Chen, Zhihong; Wallace, Robert M.; Appenzeller, Joerg
Large-Area Intercalated Two-Dimensional Pb/Graphene Heterostructure as a Platform for Generating Spin-Orbit Torque
ACS NANO
IF16
2024-08-051
PRE
Vera, Alexander; Zheng, Boyang; Yanez, Wilson; Yang, Kaijie; Kim, Seong Yeoul; Wang, Xinglu; Kotsakidis, Jimmy C.; El-Sherif, Hesham; Krishnan, Gopi; Koch, Roland J.; Bowen, T. Andrew; Dong, Chengye; Wang, Yuanxi; Wetherington, Maxwell; Rotenberg, Eli; Bassim, Nabil; Friedman, Adam L.; Wallace, Robert M.; Liu, Chaoxing; Samarth, Nitin; Crespi, Vincent H.; Robinson, Joshua A.
Mechanism of Fermi Level Pinning for Metal Contacts on Molybdenum Dichalcogenide
ACS APPLIED MATERIALS & INTERFACES
IF8.2
2024-02-293
PRE
Wang, Xinglu; Hu, Yaoqiao; Kim, Seong Yeoul; Cho, Kyeongjae; Wallace, Robert M.
Origins of Fermi Level Pinning for Ni and Ag Metal Contacts on Tungsten Dichalcogenides
ACS NANO
IF16
2023-10-0313
PRE
Wang, Xinglu; Hu, Yaoqiao; Kim, Seong Yeoul; Addou, Rafik; Cho, Kyeongjae; Wallace, Robert M.
In situ isotope study of indium diffusion in InP/Al2O3 stacks
APPLIED PHYSICS LETTERS
IF3.6
2022-01-184
PRE
Feng, Ze; Qin, Xiaoye; Chen, Xiao; Li, Zhiyun; Huang, Rong; Shen, Yang; Ding, Ding; Wang, Yitong; Jing, Meiyi; Cui, Yi; Dingsun, An; Liu, Hui; Dong, Hong; Wallace, Robert M.
Understanding and optimization of graphene gas sensors
APPLIED PHYSICS LETTERS
IF3.6
2021-07-0536
PREAI
Xie, Ti; Wang, Qin; Wallace, Robert M.; Gong, Cheng
Interface Chemistry and Band Alignment Study of Ni and Ag Contacts on MoS2
ACS APPLIED MATERIALS & INTERFACES
IF8.2
2021-03-2533
PRE
Wang, Xinglu; Kim, Seong Yeoul; Wallace, Robert M.
Controlling the Pd Metal Contact Polarity to Trigonal Tellurium by Atomic Hydrogen-Removal of the Native Tellurium Oxide
ADVANCED MATERIALS INTERFACES
IF4.4
2021-02-2414
OAAI
Smyth, Christopher M.; Zhou, Guanyu; Barton, Adam T.; Wallace, Robert M.; Hinkle, Christopher L.
Passivation of III-V surfaces with crystalline oxidation
APPLIED PHYSICS REVIEWS
IF11.6
2021-02-1033
OA
Laukkanen, P.; Punkkinen, M. P. J.; Kuzmin, M.; Kokko, K.; Lang, J.; Wallace, R. M.
Modification of the Electronic Transport in Atomically Thin WSe2by Oxidation

通过氧化修饰原子薄wse2中的电子输运

ADVANCED MATERIALS INTERFACES
IF4.4
2020-08-0225
OAAI
Lin, Yu-Chuan; Bersch, Brian M.; Addou, Rafik; Xu, Ke; Wang, Qingxiao; Smyth, Christopher M.; Jariwala, Bhakti; Walker, Roger C., II; Fullerton-Shirey, Susan K.; Kim, Moon J.; Wallace, Robert M.; Robinson, Joshua A.
Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics

用于大面积二维电子的层状氮化硼的原子层沉积

ACS APPLIED MATERIALS & INTERFACES
IF8.2
2020-07-1525
PREAI
Lee, Jaebeom; Ravichandran, Arul, V; Mohan, Jaidah; Cheng, Lanxia; Lucero, Antonio T.; Zhu, Hui; Che, Zifan; Catalano, Massimo; Kim, Moon J.; Wallace, Robert M.; Venugopal, Archana; Choi, Woong; Colombo, Luigi; Kim, Jiyoung
Origins of Fermi Level Pinning between Tungsten Dichalcogenides (WS2, WTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment
JOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
2020-06-1129
PREAI
Smyth, Christopher M.; Addou, Rafik; Hinkle, Christopher L.; Wallace, Robert M.
Giant renormalization of dopant impurity levels in 2D semiconductor MoS2
SCIENTIFIC REPORTS
IF3.9
2020-03-1811
OAAI
Hwang, Jeongwoon; Zhang, Chenxi; Kim, Yong-Sung; Wallace, Robert M.; Cho, Kyeongjae
Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3
ACS APPLIED MATERIALS & INTERFACES
IF8.2
2019-08-1610
OAAI
Barton, Adam T.; Walsh, Lee A.; Smyth, Christopher M.; Qin, Xiaoye; Addou, Rafik; Cormier, Christopher; Hurley, Paul K.; Wallace, Robert M.; Hinkle, Christopher L.
Origins of Fermi-Level Pinning between Molybdenum Dichalcogenides (MoSe2, MoTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment
JOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
2019-08-1228
PREAI
Smyth, Christopher M.; Addou, Rafik; Hinkle, Christopher L.; Wallace, Robert M.

研究方向

暂未获取到该数据
K
Kyeongjae Cho
H 指数:87论文数:577被引数:3.6万
C
Christopher L. Hinkle
H 指数:47论文数:164被引数:9,322
S
Stephen McDonnell
H 指数:0论文数:1被引数:0
R
Rafik Addou
H 指数:44论文数:106被引数:9,152
J
Jiyoung Kim
H 指数:55论文数:509被引数:1.1万
L
Luigi Colombo
H 指数:61论文数:358被引数:5.2万
M
Moon J. Kim
H 指数:78论文数:441被引数:2.2万
A
Angelica Azcatl
H 指数:28论文数:73被引数:6,549
X
Xiaoye Qin
H 指数:18论文数:36被引数:2,589
B
Barry Brennan
H 指数:30论文数:98被引数:3,645