Rafik Addou

cbn nano technologies inc

H指数:44

被引数:9,170

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Vapor-Flux Growth of c-BP Single Crystals With Concurrently High Electrical Resistivity and Isotope-Enhanced High Thermal Conductivity

同时具有高电阻率和同位素增强的高热导率的c-bp单晶的蒸气通量生长

Advanced Materials

IF26.8

2026-01-120

Oxidation-driven structural, chemical and electrical transformation in ZrSe2

氧化驱动的ZrSe2的结构、化学和电学转变

Materials Today Advances

IF8

2025-11-060

OAAI

Origins of Fermi Level Pinning for Ni and Ag Metal Contacts on Tungsten Dichalcogenides

ACS NANO

IF16

2023-10-0313

PRE

Ambient-Pressure X-ray Photoelectron Spectroscopy Study of Acetic Acid Thermal Decomposition on Pd(111)

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2023-06-126

PRE

Synthesis of Micron-Sized WS2 Crystallites Using Atomic Layer Deposition and Sulfur Annealing

CHEMISTRY OF MATERIALS

IF7

2023-06-096

PRE

Nb2O5, LiNbO3, and (Na, K)NbO3 Thin Films from High-Concentration Aqueous Nb-Polyoxometalates

INORGANIC CHEMISTRY

IF4.7

2022-02-117

PRE

Contribution of the Sub-Surface to Electrocatalytic Activity in Atomically Precise La0.7Sr0.3MnO3 Heterostructures

亚表面对原子精确的La0.7Sr0.3MnO3异质结构中电催化活性的贡献

SMALL

IF12.1

2021-10-226

Molecular-scale investigation of the oxidation behavior of chromia-forming alloys in high-temperature CO2

NPJ MATERIALS DEGRADATION

IF7.6

2021-09-1016

OAAI

Enhanced Visible-Light-Driven Hydrogen Production through MOF/MOF Heterojunctions

通过MOF/MOF异质结增强可见光驱动的制氢

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2021-03-2287

PREAI

Modification of the Electronic Transport in Atomically Thin WSe2by Oxidation

通过氧化修饰原子薄wse2中的电子输运

ADVANCED MATERIALS INTERFACES

IF4.4

2020-08-0225

OAAI

Origins of Fermi Level Pinning between Tungsten Dichalcogenides (WS2, WTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2020-06-1129

PREAI

Light soaking in metal halide perovskites studied via steady-state microwave conductivity

COMMUNICATIONS PHYSICS

IF5.8

2020-04-3027

Surface chemistry of 2-propanol and O2 mixtures on SnO2(110) studied with ambient-pressure x-ray photoelectron spectroscopy

JOURNAL OF CHEMICAL PHYSICS

IF3.1

2020-02-048

PREAI

Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2019-08-1610

OAAI

Origins of Fermi-Level Pinning between Molybdenum Dichalcogenides (MoSe2, MoTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2019-08-1228

PREAI

Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature

通过在低温下将钽转化为2D层状硫化钽来提高互连的可靠性和性能

ADVANCED MATERIALS

IF26.8

2019-06-1143

OAAI

High- Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3

ReS2上的高介电: 原位热与等离子体增强的Al2O3原子层沉积

MATERIALS

IF3.2

2019-03-3016

OAAI

High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth

通过无转移低温直接生长实现的高迁移率螺旋碲场效应晶体管

ADVANCED MATERIALS

IF26.8

2018-07-1886

PREAI

Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3

ACS NANO

IF16

2018-06-0644

PREAI

Tuning the Electronic and Photonic Properties of Monolayer MoS2 via In Situ Rhenium Substitutional Doping

通过原位rh替代掺杂调节单层MoS2的电子和光子性质

ADVANCED FUNCTIONAL MATERIALS

IF19

2018-02-16177

PREAI

Rafik Addou

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