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S

Seung‐Whan Kim

Chonnam National University

36H指数
135论文数
5.5K被引数
收录论文 85
发表时间
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Unraveling In-Plane Crystallographic Anisotropy-Dependent Memory Performance In Van Der Waals α-In2Se3 Ferroelectric Semiconductor Field-Effect Transistors解耦范德华α-In2Se3铁电半导体场效应晶体管中面内晶体各向异性依赖的记忆性能
errAdvanced Materials
IF26.8
err2025-11-20
err0
PREAI
errJong-Hyun Kim; Seung-Hwan Kim; Hyeong-Kyu Jin; Deji Akinwande; Hyun-Yong Yu
err分享
err收藏
Enhanced reliability of HfO2-based conductive bridge random access memory through MgO insertion通过插入MgO提高HfO2基导电桥随机存取存储器的可靠性
errJournal of Alloys and Compounds
IF6.3
err2025-11-12
err0
errOAAI
errSi-Yeol Lee; Seung-Hwan Kim; In-Kook Hwang; Kwangkyo Jung; Hyun-Yong Yu; Hamin Park; Seung-heon Chris Baek
err分享
err收藏
Schottky barrier height lowering and contact resistivity reduction via crystalline magnesium oxide interlayer on semiconductor surface通过半导体表面的晶态氧化镁中间层降低肖特基势垒高度和接触电阻率
errJournal of Alloys and Compounds
IF6.3
err2025-09-29
err0
errOAAI
errSeung-Hwan Kim; Yuji Yang; Daeyoon Baek; Seokwoo Jeon; Seung-heon Chris Baek; Hyung-jun Kim
err分享
err收藏
First Implementation of Edge-Contacted α-In2Se3 Ferroelectric Semiconductor Field-Effect Transistors and their Application to Artificial Heterosynapse首次实现边缘接触的α-In₂Se₃铁电半导体场效应晶体管及其在人工异突触中的应用
errSmall
IF12.1
err2025-08-13
err0
PREAI
errJong-Hyun Kim; Seung-Hwan Kim; Euyjin Park; Hyung-Jun Kim; Jeong-Kyu Kim; Hyun-Yong Yu
err分享
err收藏
Novel fermi-level alignment approach to Schottky barrier height modulation in MoTe2 with metal-graphene-semiconductor source/drain contact一种新型费米能级对齐方法，用于调节MoTe2中金属-石墨烯-半导体源/漏接触的肖特基势垒高度
errJournal of Alloys and Compounds
IF6.3
err2025-07-11
err0
PREAI
errSungjoo Song; Seung-Hwan Kim; Kyu-Hyun Han; Jongyoun Park; Jeong-Kyu Kim; Hyun-Yong Yu
err分享
err收藏
A novel AZO capping approach on SnO thin-film transistors for efficient threshold voltage modulation and electrical performance enhancement一种新型的AZO包覆方法用于SnO薄膜晶体管，以实现高效的阈值电压调制和电学性能提升
errApplied Surface Science
IF6.9
err2025-07-11
err0
PREAI
errJongyoun Park; Sungjoo Song; Seung Hwan Kim; Jong-Hyun Kim; Jeong-Kyu Kim; Hyun-Yong Yu
err分享
err收藏
Enhancement of the Proton-Electron Coupling Effect by an Ionic Oxide-Based Proton Reservoir for High-Performance Artificial Synaptic Transistors基于离子氧化物基质质子储库对高性能人工突触晶体管中质子-电子耦合效应的增强
errACS NANO
IF16
err2025-01-06
err1
PREAI
errKim, SH; Jin, DG; Kim, JH; Baek, D; Kim, HJ; Yu, HY
err分享
err收藏
Spin-Charge Conversion-Based Artificial Synaptic Device for Neuromorphic Computing用于神经形态计算的基于自旋电荷转换的人工突触设备
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2024-12-27
err0
PREAI
errKim, Seong Been; Lee, Je-Jun; Choi, Dongwon; Kim, Seung-Hwan; Ahn, Jeong Ung; Han, Ki Hyuk; Park, Tae-Eon; Lee, Oukjae; Lee, Ki-Young; Hong, Seokmin; Min, Byoung-Chul; Kim, Hyung-jun; Hwang, Do Kyung; Koo, Hyun Cheol
err分享
err收藏
Plasma Treatment Induced Charge Transfer for Realization of Negative Differential Transconductance in Van Der Waals Single-Channel等离子体处理诱导电荷转移实现范德华单通道负微分跨导
errADVANCED FUNCTIONAL MATERIALS
IF19
err2024-11-27
err0
PREAI
errHan, Kyu Hyun; Kim, Seung-Hwan; Kim, Jong-Hyun; Yu, Hyun-Yong
err分享
err收藏
Enhanced Electrical Polarization in van der Waals α-In2Se3 Ferroelectric Semiconductor Field-Effect Transistors by Eliminating Surface Screening Charge通过消除表面屏蔽电荷来增强范德华 α-In2Se3铁电半导体场效应晶体管中的电极化
errSMALL
IF12.1
err2024-10-02
err0
PREAI
errKim, Jong-Hyun; Kim, Seung-Hwan; Yu, Hyun-Yong
err分享
err收藏
Effect of the simultaneous addition of lanthanum and nickel on the oxidation behavior and related area-specific resistance of ferritic stainless steels for solid oxide fuel cell interconnects同时添加镧和镍对用于固体氧化物燃料电池互连的铁素体不锈钢的氧化行为和相关的面积比电阻的影响
errCORROSION SCIENCE
IF8.5
err2024-06-01
err0
errOAAI
errKo, Yoon Seok; Kim, Seunghwan; Park, Soohyung; Kim, Byung Kyu; Shim, Jae-Hyeok; Hong, Jihyun; Lee, Young -Su; Han, Heung Nam; Kim, Dong-Ik
err分享
err收藏
Translational insights and overall survival in the U31402-A-U102 study of patritumab deruxtecan (HER3-DXd) in EGFR-mutated NSCLC
errANNALS OF ONCOLOGY
IF65.4
err2024-05-01
err8
errOAAI
errYu, H. A.; Baik, C.; Kim, D. -W.; Johnson, M. L.; Hayashi, H.; Nishio, M.; Yang, J. C. -H.; Su, W. -C.; Gold, K. A.; Koczywas, M.; Smit, E. F.; Steuer, C. E.; Felip, E.; Murakami, H.; Kim, S. -W.; Su, X.; Sato, S.; Fan, P. -D.; Fujimura, M.; Tanaka, Y.; Patel, P.; Sternberg, D. W.; Sellami, D.; Jaenne, P. A.
err分享
err收藏
High-κ Dielectric (HfO2)/2D Semiconductor (HfSe2) Gate Stack for Low-Power Steep-Switching Computing Devices用于低功耗陡开关计算设备的高 κ 电介质 (HfO2)/2D半导体 (HfSe2) 栅极堆叠
errADVANCED MATERIALS
IF26.8
err2024-04-08
err3
errOAAI
errKang, Taeho; Park, Joonho; Jung, Hanggyo; Choi, Haeju; Lee, Sang-Min; Lee, Nayeong; Lee, Ryong-Gyu; Kim, Gahye; Kim, Seung-Hwan; Kim, Hyung-jun; Yang, Cheol-Woong; Jeon, Jongwook; Kim, Yong-Hoon; Lee, Sungjoo
err分享
err收藏
Dielectric interface engineering using aminosilane coupling agent for enhancement of negative differential resistance phenomenon
errMATERIALS TODAY ADVANCES
IF8
err2024-03-01
err1
errOAAI
errHan, Kyu Hyun; Kim, Seung-Geun; Kim, Seung-Hwan; Kim, Jong-Hyun; Hwang, Seong-Hyun; Kim, Min-Su; Song, Sung-Joo; Yu, Hyun-Yong
err分享
err收藏
Charge transfer mechanism for realization of double negative differential transconductance
errNPJ 2D MATERIALS AND APPLICATIONS
IF8.8
err2024-02-29
err2
errOAAI
errHan, Kyu Hyun; Kim, Seung-Hwan; Kim, Seung-Geun; Kim, Jong-Hyun; Song, Sungjoo; Yu, Hyun-Yong
err分享
err收藏
Photoelectron Spectroscopic Study of the Interfacial Electronic Structures of Metal-Ion Containing Polyelectrolytes on ITO Substrates
errADVANCED FUNCTIONAL MATERIALS
IF19
err2024-01-24
err4
PREAI
errLee, Jin Hee; Khan, Yeasin; Kim, Seunghwan; Choi, Ae Jin; Walker, Bright; Park, Soohyung; Seo, Jung Hwa
err分享
err收藏
In-Depth Analysis on Self Alignment Effect of the Fermi-Level Using Graphene on Both n- and p-Type Semiconductors
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2023-11-30
err3
PREAI
errSong, Sungjoo; Kim, Seung-Hwan; Han, Kyu-Hyun; Kim, Hyung-jun; Yu, Hyun-Yong
err分享
err收藏
Carbon-Neutral ESG Method Based on PV Energy Generation Prediction Model in Buildings for EV Charging Platform
errBUILDINGS
IF3.1
err2023-08-18
err7
errOAAI
errYoon, Guwon; Kim, Seunghwan; Shin, Haneul; Cho, Keonhee; Jang, Hyeonwoo; Lee, Tacklim; Choi, Myeong-in; Kang, Byeongkwan; Park, Sangmin; Lee, Sanghoon; Park, Junhyun; Jung, Hyeyoon; Shmilovitz, Doron; Park, Sehyun
err分享
err收藏
Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide基于二氧化钒绝缘体-金属相变的高调谐负微分电阻器件
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2023-06-20
err1
PREAI
errKim, Jong-Hyun; Kim, Seung-Geun; Kim, Seung-Hwan; Han, Kyu-Hyun; Kim, Jiyoung; Yu, Hyun-Yong
err分享
err收藏
Effective threshold voltage modulation technique for steep-slope 2D atomic threshold switching field-effect transistor陡斜率二维原子阈值开关场效应晶体管的有效阈值电压调制技术
errMATERIALS TODAY ADVANCES
IF8
err2023-06-01
err2
errOAAI
errHwang, Seong-Hyun; Kim, Seung-Hwan; Kim, Seung-Geun; Kim, Min-Su; Han, Kyu-Hyun; Song, Sungjoo; Kim, Jong-Hyun; Park, Euyjin; Jin, Dong-Gyu; Yu, Hyun-Yong
err分享
err收藏

研究方向

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合作学者
合作期刊
M
Michael Karin
H 指数: 254 · 论文数: 904
R
Robert G. Roeder
H 指数: 162 · 论文数: 679
J
James Chih‐Hsin Yang
H 指数: 141 · 论文数: 1.2K
Y
Yi‐Long Wu
H 指数: 135 · 论文数: 2.2K
T
Tony Mok
H 指数: 131 · 论文数: 1.1K
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