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J

Jeong Hwan Han

Seoul National University of Science and Technology

31H指数
178论文数
3.6K被引数
收录论文 91
发表时间
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Improved chemical stability and high electrical performance of TiO2 capacitors with RuO2 bottom electrodes via an ultrathin Mo interlayer通过超薄Mo中间层提高TiO2电容器中RuO2底电极的化学稳定性和高电学性能
errSurfaces and Interfaces
IF6.3
err2026-07-01
err0
PREAI
errChoi, Seon Gu; Lee, Jae Hyeon; Han, Jeong Min; Han, Jeong Hwan
err分享
err收藏
Inter-ligand reaction-mediated atomic layer deposition of Ru-incorporated MoCx films for dual-function copper diffusion barriers and seed layers通过配体间反应介导的原子层沉积法制备含Ru的MoCx薄膜，用于双功能铜扩散阻挡层和种子层
errJournal of Alloys and Compounds
IF6.3
err2026-05-04
err0
PREAI
errJi Sang Ahn; Min Seok Kim; Kazuharu Suzuki; Jeong Hwan Han
err分享
err收藏
Designing cryo-compatible ferroelectric hafnia devices through electrode and interface control通过电极和界面控制设计低温兼容的铁电氧化铪器件
errMaterials Today Chemistry
IF6.7
err2026-04-03
err0
PREAI
errChaehyeong Ha; Jeongmin Han; Jeong Hwan Han; Hye Ryeong Lee; Taehwan Moon; Yoon Jang Chung
err分享
err收藏
Threshold Switching Behavior and Underlying Mechanisms in Pure SiO2-Based Selectors纯SiO2基选择器的阈值开关行为及其潜在机制
errACS Applied Materials & Interfaces
IF0
err2026-03-18
err0
PREAI
errHye Rim Kim; Tae Jung Ha; Jeong Hwan Song; Su Yong Park; Jun Seok Moon; Min-Yeong Choi; Jae Hyeon Lee; Jeong Hwan Han; Byung Joon Choi; Jae Hyuck Jang; Soo Gil Kim; Tae Joo Park
err分享
err收藏
Atomic-Layer-Deposition of Sn-Incorporated MoO2 Films as an Interface Control Layer for High-Performances TiO2-Based DRAM Capacitors结合Sn的MoO2薄膜的原子层沉积作为高性能TiO2-Based DRAM电容器的界面控制层
errACS Applied Materials and Interfaces
IF8.2
err2026-02-06
err0
PREAI
errJae Hyeon Lee; Bo Keun Park; Taek-Mo Chung; Jeong Hwan Han
err分享
err收藏
Interfacial oxygen-scavenging-driven formation of atomic-layer-deposited MoO2 on MoNx electrodes for improved TiO2 capacitor performance界面氧捕集驱动的原子层沉积MoO2在MoNx电极上的形成，以改善TiO2电容器的性能
errj. mater. chem. c
IF0
err2026-01-17
err0
PREAI
errWangu Kang; Jae Hyeon Lee; Jeong Hwan Han
err分享
err收藏
Carrier Concentration Control and Thermoelectric Enhancement of n-type Bi2Te3-based Materials via Atomic-Layer-Deposited In2O3 Interfacial Layers通过原子层沉积的In₂O₃界面层控制n型Bi₂Te₃基材料的载流子浓度与热电性能提升
errJournal of the European Ceramic Society
IF6.2
err2026-01-01
err0
PREAI
errGwang Min Park; Ji Ho Jeon; Jaebaek Ju; Jin-Sang Kim; Seung-Hyub Baek; Jeong Hwan Han; Seong Keun Kim
err分享
err收藏
Utilization of oxygen content modulated Ru electrode to examine the interfacial redox chemistry of ferroelectric Hf0.5Zr0.5O2利用氧含量调制的Ru电极研究铁电Hf0.5Zr0.5O2的界面氧化还原化学
errJournal of Materiomics
IF9.6
err2025-07-25
err0
errOAAI
errKun Yang; Hyojun Choi; Ji Sang Ahn; Eun Ji Ju; Dong In Han; Se Hyun Kim; Ju Yong Park; Heejin Hong; Kwan Hyun Park; Jeong Hwan Han; Min Hyuk Park
err分享
err收藏
Low-resistivity and high-density molybdenum carbonitride films grown by plasma-enhanced atomic layer deposition采用等离子体增强原子层沉积法制备的低电阻率、高密度钼碳氮薄膜
errCERAMICS INTERNATIONAL
IF5.6
err2025-01-01
err0
PREAI
errAhn, Ji Sang; Kang, Wangu; Han, Jeong Hwan
err分享
err收藏
Plasma-enhanced atomic layer deposition of indium-free ZnSnOx thin films for thin-film transistors
errAPPLIED SURFACE SCIENCE
IF6.9
err2025-01-01
err0
errOAAI
errRyu, Seung Ho; Hwang, Inhong; Jeon, Dahui; Lee, Sung Kwang; Chung, Taek-Mo; Han, Jeong Hwan; Chae, Sieun; Baek, In-Hwan; Kim, Seong Keun
err分享
err收藏
Aluminum-Doped Indium Oxide Electron Transport Layer Grown by Atomic Layer Deposition: Highly Efficient and Damage-Resistant Interconnection Solution for All-Perovskite Tandem Solar Cells with 25.46% Efficiency原子层沉积生长的铝掺杂氧化铟电子传输层: 效率25.46% 的全钙钛矿串联太阳能电池的高效抗损伤互连解决方案
errSMALL
IF12.1
err2024-10-23
err0
PREAI
errYoun, Pil Ju; Woo, Mun Young; Won, Jong Hyeon; Im, Jeong Min; Lee, Jun Hyuk; Noh, Jun Hong; Han, Jeong Hwan
err分享
err收藏
Enhanced Oxidation Resistance and Interface Stability of Atomic-Layer-Deposited MoN x Electrodes via TiN Passivation for DRAM Cell Capacitor Applications通过TiN钝化增强了原子层沉积的MoN x电极的抗氧化性和界面稳定性，用于DRAM单元电容器应用
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2024-10-15
err0
PREAI
errKang, Wangu; Ahn, Ji Sang; Lee, Jae Hyeon; Choi, Byung Joon; Han, Jeong Hwan
err分享
err收藏
Low temperature crystallization of atomic-layer-deposited SrTiO 3 films with an extremely low equivalent oxide thickness of sub-0.4 nm
errAPPLIED SURFACE SCIENCE
IF6.9
err2024-08-01
err3
errOAAI
errChung, Hong Keun; Jeon, Jihoon; Kim, Han; Jang, Myoungsu; Kim, Sung-Chul; Won, Sung Ok; Baek, In-Hwan; Chung, Yoon Jang; Han, Jeong Hwan; Cho, Sung Haeng; Park, Tae Joo; Kim, Seong Keun
err分享
err收藏
Enhancing Penetration Performance and Drug Delivery of Polymeric Microneedles Using Silica Nanoparticle Coatings
errADVANCED MATERIALS INTERFACES
IF4.4
err2024-06-22
err1
errOAAI
errKim, Sohyun; Choi, Hyewon; Jeong, Hyejoong; Ortiz, Wilfredo Mendez; Cheon, Hwayeong; Jeon, Jae Yong; Lee, Jae Hyeon; Han, Jeong Hwan; Stebe, Kathleen J.; Lee, Daeyeon; Yoon, Hyunsik
err分享
err收藏
Growth of Atomic layer-deposited Monoclinic Molybdenum Dioxide Films Stabilized by Tin Oxide Doping for DRAM Capacitor Electrode Applications
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2024-04-25
err1
PREAI
errLee, Jae Hyeon; Kang, Wangu; Shin, Jeong Eun; Park, Bo Keun; Chung, Taek-Mo; Han, Jeong Hwan
err分享
err收藏
Phase-controlled molybdenum dioxide electrodes by RF reactive magnetron sputtering for achieving high-k rutile TiO2 dielectric
errVACUUM
IF3.9
err2024-02-01
err3
PREAI
errLee, Jae Hyeon; Kang, Wangu; Chung, Hong Keun; Kim, Seong Keun; Han, Jeong Hwan
err分享
err收藏
Horizontally aligned ALD-SnO films grown on SiO2-passivated high-k HfO2 dielectrics for high-mobility and low-power P-channel thin-film transistor在SiO2-passivated高k HfO2电介质上生长的水平排列的ald-sno膜，用于高迁移率和低功率P沟道薄膜晶体管
errSURFACES AND INTERFACES
IF6.3
err2024-01-01
err1
errOAAI
errKim, Jina; Jang, Hee Won; Chae, Myeong Gil; Choi, Heenang; Shin, Jeong Eun; Park, Bo Keun; Chung, Taek-Mo; Han, Jeong Hwan
err分享
err收藏
Electromigration Reliability of Barrierless Ruthenium and Molybdenum for Sub-10 nm Interconnection
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2023-04-26
err8
PREAI
errKim, Jungkyun; Rhee, Hakseung; Son, Myeong Won; Park, Juseong; Kim, Gwangmin; Song, Hanchan; Kim, Geunwoo; Park, Byong-Guk; Han, Jeong Hwan; Kim, Kyung Min
err分享
err收藏
Low-resistivity ruthenium metal thin films grown via atomic layer deposition using dicarbonyl-bis(5-methyl-2,4-hexanediketonato)ruthenium (II) and oxygen
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2023-03-01
err10
PREAI
errKo, Eun Chong; Kim, Jae Yeon; Rhee, Hakseung; Kim, Kyung Min; Han, Jeong Hwan
err分享
err收藏
High Field-Effect Mobility and On/Off Current Ratio of p-Type ALD SnO Thin-Film Transistorp型ALD SnO薄膜晶体管的高场效应迁移率和开/关电流比
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2023-02-03
err11
PREAI
errChae, Myeong Gil; Kim, Jina; Jang, Hee Won; Park, Bo Keun; Chung, Taek-Mo; Kim, Seong Keun; Han, Jeong Hwan
err分享
err收藏

研究方向

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合作学者
合作期刊
C
Cheol Seong Hwang
H 指数: 96 · 论文数: 971
S
Sang‐Young Lee
H 指数: 76 · 论文数: 682
W
Won Bae Kim
H 指数: 74 · 论文数: 537
D
Daeyeon Lee
H 指数: 69 · 论文数: 409
J
Jong-Ho Lee
H 指数: 66 · 论文数: 969
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