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收藏Atom probe tomography for advanced nanoelectronic devices: Current status and perspectives
Barnes, J. P.; Grenier, A.; Mouton, I.; Barraud, S.; Audoit, G.; Bogdanowicz, J.; Fleischmann, C.; Melkonyan, D.; Vandervorst, W.; Duguay, S.; Rolland, N.; Vurpillot, F.; Blavette, D.
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收藏Functionalization of Silica Nanoparticles and Native Silicon Oxide with Tailored Boron-Molecular Precursors for Efficient and Predictive p-Doping of Silicon
Mathey, Laurent; Alphazan, Thibault; Valla, Maxence; Veyre, Laurent; Fontaine, Herve; Enyedi, Virginie; Yckache, Karim; Danielou, Marianne; Kerdiles, Sebastien; Guerrero, Jean; Barnes, Jean-Paul; Veillerot, Marc; Chevalier, Nicolas; Mariolle, Denis; Bertin, Francois; Durand, Corentin; Berthe, Maxime; Dendooven, Jolien; Martin, Francois; Thieuleux, Chloe; Grandidier, Bruno; Coperet, Christophe
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收藏Three dimensional imaging and analysis of a single nano-device at the ultimate scale using correlative microscopy techniques
Grenier, A.; Duguay, S.; Barnes, J. P.; Serra, R.; Rolland, N.; Audoit, G.; Morin, P.; Gouraud, P.; Cooper, D.; Blavette, D.; Vurpillot, F.
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收藏Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices
Cipro, R.; Baron, T.; Martin, M.; Moeyaert, J.; David, S.; Gorbenko, V.; Bassani, F.; Bogumilowicz, Y.; Barnes, J. P.; Rochat, N.; Loup, V.; Vizioz, C.; Allouti, N.; Chauvin, N.; Bao, X. Y.; Ye, Z.; Pin, J. B.; Sanchez, E.
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