Hajime Fujikura - Publications, H-index & Citations

Hajime Fujikura

sumitomo chem co ltd

19H指数

125论文数

1.1K被引数

收录论文 16

发表时间

Extremely small trap concentrations in high-purity n-type GaN grown by quartz-free hydride vapor phase epitaxy 采用无石英氢化物气相外延生长的高纯度n型GaN中极低的陷阱浓度

Applied Physics Express

IF2.2

2026-02-01

PREAI

Hirayama, Yusuke; Horita, Masahiro; Kaneki, Shota; Fujikura, Hajime; Suda, Jun

6 kV GaN p-n diode fabricated by hybrid epitaxial growth with regrowth interface treated by CF4 plasma

APPLIED PHYSICS LETTERS

IF3.6

2025-01-02

PREAI

Ohta, Hiroshi; Narita, Yoshinobu; Kaneki, Shota; Kitamura, Toshio; Horikiri, Fumimasa; Fujikura, Hajime; Takatani, Shinichiro; Mishima, Tomoyoshi

Structural and optical properties of epitaxial ScxAl1-xN coherently grown on GaN bulk substrates by sputtering method

APPLIED PHYSICS LETTERS

IF3.6

2024-07-09

PREAI

Maeda, Takuya; Wakamoto, Yusuke; Kaneki, Shota; Fujikura, Hajime; Kobayashi, Atsushi

Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals

APPLIED PHYSICS LETTERS

IF3.6

2024-06-03

PREAI

Sano, K.; Fujikura, H.; Konno, T.; Kaneki, S.; Ichikawa, S.; Kojima, K.

Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse

APPLIED PHYSICS LETTERS

IF3.6

2024-01-03

PREAI

Kaneki, Shota; Konno, Taichiro; Kimura, Takeshi; Kanegae, Kazutaka; Suda, Jun; Fujikura, Hajime

Substantial and simultaneous reduction of major electron traps and residual carbon in homoepitaxial GaN layers

APPLIED PHYSICS LETTERS

IF3.6

2021-05-07

PREAI

Kimura, Takeshi; Konno, Taichiro; Fujikura, Hajime

Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent doping variation by quartz-free hydride vapor phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2020-07-08

PREAI

Fujikura, Hajime; Konno, Taichiro; Kimura, Takeshi; Narita, Yoshinobu; Horikiri, Fumimasa

Growth of InGaN films on hardness-controlled bulk GaN substrates

APPLIED PHYSICS LETTERS

IF3.6

2019-10-21

PREAI

Sumiya, Masatomo; Fukuda, Kiyotaka; Fujikura, Hajime; Konno, Taichiro; Suzuki, Takayuki; Fujimoto, Tetsuji; Yoshida, Takehiro; Ueda, Shigenori; Watanabe, Kenji; Ohnishi, Tsuyoshi; Honda, Tohru

Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2019-07-02

PREAI

Kanegae, Kazutaka; Fujikura, Hajime; Otoki, Yohei; Konno, Taichiro; Yoshida, Takehiro; Horita, Masahiro; Kimoto, Tsunenobu; Suda, Jun

Roughening of GaN homoepitaxial surfaces due to step meandering and bunching instabilities and their suppression in hydride vapor phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2018-10-08

PREAI

Fujikura, Hajime; Konno, Taichiro

Molecular-beam epitaxy and device applications of III-V semiconductor nanowires

MRS BULLETIN

IF4.9

2013-11-29

PREAI

Hasegawa, H; Fujikura, H; Okada, H

Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivation 在 (001) GaAs上生长的用于表面钝化的超薄Si界面控制层的扫描隧道显微镜和光谱研究

APPLIED SURFACE SCIENCE

IF6.9

2000-06-01

PREAI

Negoro, N; Fujikura, H; Hasegawa, H

Formation of ⟨001⟩-aligned nano-scale pores on (001) n-InP surfaces by photoelectrochemical anodization in HCl

JOURNAL OF ELECTROANALYTICAL CHEMISTRY

IF4.1

1999-09-01

PREAI

Hamamatsu, A; Kaneshiro, C; Fujikura, H; Hasegawa, H

Electronic properties of AlxGa1-xAs surface passivated by ultrathin silicon interface control layer

APPLIED SURFACE SCIENCE

IF6.9

1999-03-01

PREAI

Adamowicz, B; Miczek, M; Ikeya, K; Mutoh, M; Saitoh, T; Fujikura, H; Hasegawa, H

Effect of mis-orientation of mesa-stripes on the growth of InGaAs quantum wires by selective molecular beam epitaxy

APPLIED SURFACE SCIENCE

IF6.9

1997-06-01

PREAI

Kihara, M; Fujikura, H; Hasegawa, H

Excitation power dependent photoluminescence characterization of insulator-semiconductor interfaces on near surface quantum structures passivated by silicon interface control layer technology

APPLIED SURFACE SCIENCE

IF6.9

1997-06-01

PREAI

Hasegawa, H; Kodama, S; Ikeya, K; Fujikura, H

研究方向