Jun Suda - Publications, H-index & Citations

Jun Suda

nagoya university

46H指数

611论文数

8.5K被引数

收录论文 45

发表时间

Influence of p-GaN body contact on output characteristics of vertical GaN trench metal-oxide-semiconductor field effect transistors p-GaN体接触对垂直GaN沟槽金属-氧化物-半导体场效应晶体管输出特性的影响

Japanese Journal of Applied Physics

IF1.8

2026-05-15

PREAI

Kusunoki, Nami; Ichikawa, Yuki; Oka, Tohru; Tanaka, Nariaki; Hasegawa, Kazuya; Izumi, Takatomi; Niwa, Takaki; Suda, Jun

Exploring Design Guidelines of AlGaN/GaN Gated-Anode Diodes Toward High-Power, High-Efficiency Microwave Rectification 探索AlGaN/GaN栅控阳极二极管的高功率、高效率微波整流的设计准则

IEEE Transactions on Electron Devices

IF3.2

2026-03-01

PREAI

Watanabe, Tomoya; Takahashi, Hidemasa; Makisako, Ryutaro; Wakejima, Akio; Ando, Yuji; Suda, Jun

Behavior of excess donor-like defects induced by implantation of various ion species and subsequent annealing in n-type GaN layers 不同离子种类注入及后续退火在n型GaN层中诱导过量施主型缺陷的行为

Japanese Journal of Applied Physics

IF1.8

2026-02-16

PREAI

Iguchi, Hiroko; Horita, Masahiro; Kataoka, Keita; Narita, Tetsuo; Kachi, Tetsu; Suda, Jun

Extremely small trap concentrations in high-purity n-type GaN grown by quartz-free hydride vapor phase epitaxy 采用无石英氢化物气相外延生长的高纯度n型GaN中极低的陷阱浓度

Applied Physics Express

IF2.2

2026-02-01

PREAI

Hirayama, Yusuke; Horita, Masahiro; Kaneki, Shota; Fujikura, Hajime; Suda, Jun

Safe and cost-effective mist CVD as a homoepitaxial growth technology to fabricate β-Ga2O3 RF MESFETs 安全且经济高效的喷雾CVD作为同质外延生长技术，用于制造β-Ga2O3 RF MESFETs

JAPANESE JOURNAL OF APPLIED PHYSICS

IF1.8

2025-10-01

PREAI

Ikeda, Hikaru; Wakamatsu, Takeru; Ando, Yuji; Takahashi, Hidemasa; Makisako, Ryutaro; Ueda, Tetsuzo; Suda, Jun; Tanaka, Katsuhisa; Fujita, Shizuo; Sugaya, Hidetaka

Vacancy-Type Defects in n-Type GaN Fabricated by Low-Dose Ion Implantation Studied by a Monoenergetic Positron Beam 通过单能正电子束研究低剂量离子注入法制备的n型GaN中的空位型缺陷

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

IF1.8

2025-09-01

OAAI

Uedono, Akira; Iguchi, Hiroko; Horita, Masahiro; Suda, Jun; Shima, Kohei; Chichibu, Shigefusa F.; Ishibashi, Shoji

Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse

APPLIED PHYSICS LETTERS

IF3.6

2024-01-03

PREAI

Kaneki, Shota; Konno, Taichiro; Kimura, Takeshi; Kanegae, Kazutaka; Suda, Jun; Fujikura, Hajime

Effects of proton irradiation-induced point defects on Shockley-Read-Hall recombination lifetimes in homoepitaxial GaN p-n junctions

APPLIED PHYSICS LETTERS

IF3.6

2023-03-14

PREAI

Narita, Tetsuo; Kanechika, Masakazu; Tomita, Kazuyoshi; Nagasato, Yoshitaka; Kondo, Takeshi; Uesugi, Tsutomu; Ikeda, Satoshi; Kosaki, Masayoshi; Oka, Tohru; Suda, Jun

Correlation between non-ionizing energy loss and production rate of electron trap at EC - (0.12-0.20) eV formed in gallium nitride by various types of radiation

APPLIED PHYSICS LETTERS

IF3.6

2023-01-06

PREAI

Aoshima, Keito; Horita, Masahiro; Suda, Jun

Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage

APPLIED PHYSICS LETTERS

IF3.6

2022-11-15

PREAI

Matys, Maciej; Kitagawa, Kazuki; Narita, Tetsuo; Uesugi, Tsutomu; Suda, Jun; Kachi, Tetsu

APPLIED PHYSICS LETTERS

IF3.6

2022-04-07

PREAI

Endo, Meguru; Horita, Masahiro; Suda, Jun

Identification of type of threading dislocation causing reverse leakage in GaN p-n junctions after continuous forward current stress

SCIENTIFIC REPORTS

IF3.9

2022-01-27

OAAI

Narita, Tetsuo; Kanechika, Masakazu; Kojima, Jun; Watanabe, Hiroki; Kondo, Takeshi; Uesugi, Tsutomu; Yamaguchi, Satoshi; Kimoto, Yasuji; Tomita, Kazuyoshi; Nagasato, Yoshitaka; Ikeda, Satoshi; Kosaki, Masayoshi; Oka, Tohru; Suda, Jun

Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress

APPLIED PHYSICS LETTERS

IF3.6

2021-06-22

PREAI

Narita, Tetsuo; Nagasato, Yoshitaka; Kanechika, Masakazu; Kondo, Takeshi; Uesugi, Tsutomu; Tomita, Kazuyoshi; Ikeda, Satoshi; Yamaguchi, Satoshi; Kimoto, Yasuji; Kosaki, Masayoshi; Oka, Tohru; Kojima, Jun; Suda, Jun

Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices

APPLIED PHYSICS LETTERS

IF3.6

2021-03-09

PREAI

Yamada, Shinji; Sakurai, Hideki; Osada, Yamato; Furuta, Kanji; Nakamura, Toshiyuki; Kamimura, Ryuichiro; Narita, Tetsuo; Suda, Jun; Kachi, Tetsu

Mg-implanted bevel edge termination structure for GaN power device applications

APPLIED PHYSICS LETTERS

IF3.6

2021-03-03

PREAI

Matys, Maciej; Ishida, Takashi; Nam, Kyung Pil; Sakurai, Hideki; Narita, Tetsuo; Uesugi, Tsutomu; Bockowski, Michal; Suda, Jun; Kachi, Tetsu

Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate

APPLIED PHYSICS LETTERS

IF3.6

2021-01-05

PREAI

Horita, Masahiro; Narita, Tetsuo; Kachi, Tetsu; Suda, Jun

Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam

SCIENTIFIC REPORTS

IF3.9

2020-10-15

OAAI

Uedono, Akira; Sakurai, Hideki; Narita, Tetsuo; Sierakowski, Kacper; Bockowski, Michal; Suda, Jun; Ishibashi, Shoji; Chichibu, Shigefusa F.; Kachi, Tetsu

Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination

APPLIED PHYSICS LETTERS

IF3.6

2019-09-30

PREAI

Maeda, Takuya; Narita, Tetsuo; Ueda, Hiroyuki; Kanechika, Masakazu; Uesugi, Tsutomu; Kachi, Tetsu; Kimoto, Tsunenobu; Horita, Masahiro; Suda, Jun

Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing

APPLIED PHYSICS LETTERS

IF3.6

2019-09-30

134

PREAI

Sakurai, Hideki; Omori, Masato; Yamada, Shinji; Furukawa, Yukihiro; Suzuki, Hideo; Narita, Tetsuo; Kataoka, Keita; Horita, Masahiro; Bockowski, Michal; Suda, Jun; Kachi, Tetsu

Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2019-07-02

PREAI

Kanegae, Kazutaka; Fujikura, Hajime; Otoki, Yohei; Konno, Taichiro; Yoshida, Takehiro; Horita, Masahiro; Kimoto, Tsunenobu; Suda, Jun

研究方向