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P. D. Kirsch

samsung

33H指数
205论文数
4.6K被引数
收录论文 19
发表时间
Lg=100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer
err2014-04-21
err7
PREAI
errKoh, D.; Kwon, H. M.; Kim, T-W; Kim, D-H; Hudnall, Todd W.; Bielawski, Christopher W.; Maszara, W.; Veksler, D.; Gilmer, D.; Kirsch, P. D.; Banerjee, S. K.
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Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors
err2013-11-25
err11
errOAAI
errShin, H. S.; Yum, J. H.; Johnson, D. W.; Harris, H. R.; Hudnall, Todd. W.; Oh, J.; Kirsch, P.; Wang, W. -E.; Bielawski, C. W.; Banerjee, S. K.; Lee, J. C.; Lee, H. D.
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Benchmarking current density in staggered gap In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction Esaki tunnel diodes
err2013-05-31
err24
PREAI
errRomanczyk, B.; Thomas, P.; Pawlik, D.; Rommel, S. L.; Loh, W. -Y.; Wong, M. H.; Majumdar, K.; Wang, W. -E.; Kirsch, P. D.
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Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors
err2011-12-05
err15
PREAI
errNegara, M. A.; Veksler, D.; Huang, J.; Ghibaudo, G.; Hurley, P. K.; Bersuker, G.; Goel, N.; Kirsch, P.
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Test/Retest reliability of an imaging task battery for pharmaco-fMRI
err2011-09-01
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PREAI
errPlichta, M.; Schwartz, A. J.; Wilson, F. J.; Colman, P. J.; Grimm, O.; Tost, H.; Haddad, L.; Sauer, C.; Kirsch, P.; Meyer-Lindenberg, A.
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Increasing permittivity in HfZrO thin films by surface manipulation
err2009-08-04
err70
PREAI
errBoescke, T. S.; Hung, P. Y.; Kirsch, P. D.; Quevedo-Lopez, M. A.; Ramirez-Bon, R.
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Bulk and Interface effects on voltage linearity of ZrO2-SiO2 multilayered metal-insulator-metal capacitors for analog mixed-signal applications
err2009-07-16
err29
PREAI
errPark, S. D.; Park, C.; Gilmer, D. C.; Park, H. K.; Kang, C. Y.; Lim, K. Y.; Burham, C.; Barnett, J.; Kirsch, P. D.; Tseng, H. H.; Jammy, R.; Yeom, G. Y.
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Effective surface passivation methodologies for high performance germanium metal oxide semiconductor field effect transistors
err2008-11-14
err8
PREAI
errNa, H. J.; Lee, J. C.; Heh, D.; Sivasubramani, P.; Kirsch, P. D.; Oh, J. W.; Majhi, P.; Rivillon, S.; Chabal, Y. J.; Lee, B. H.; Choi, R.
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Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning
err2008-03-04
err193
PREAI
errKirsch, P. D.; Sivasubramani, P.; Huang, J.; Young, C. D.; Quevedo-Lopez, M. A.; Wen, H. C.; Alshareef, H.; Choi, K.; Park, C. S.; Freeman, K.; Hussain, M. M.; Bersuker, G.; Harris, H. R.; Majhi, P.; Choi, R.; Lysaght, P.; Lee, B. H.; Tseng, H. -H.; Jammy, R.; Boescke, T. S.; Lichtenwalner, D. J.; Jur, J. S.; Kingon, A. I.
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Stabilization of higher-κ tetragonal HfO2 by SiO2 admixture enabling thermally stable metal-insulator-metal capacitors
err2007-08-14
err67
PREAI
errBoescke, T. S.; Govindarajan, S.; Kirsch, P. D.; Hung, P. Y.; Krug, C.; Lee, B. H.; Heitmann, J.; Schroeder, U.; Pant, G.; Gnade, B. E.; Krautschneider, W. H.
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Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices
err2007-08-07
err124
PREAI
errGovindarajan, S.; Boescke, T. S.; Sivasubramani, P.; Kirsch, P. D.; Lee, B. H.; Tseng, H.-H.; Jammy, R.; Schroeder, U.; Ramanathan, S.; Gnade, B. E.
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Combination of e-beam lithography and of high velocity AlN/diamond-layered structure for SAW filters in X band
err2007-07-01
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PREAI
errKirsch, Philippe; Assouar, Mohamed B.; Elmazria, Omar; El Hakiki, M.; Mortet, Vincent; Alnot, Patrick
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Mobility and charge trapping comparison for crystalline and amorphous HfON and HfSiON gate dielectrics
err2006-12-13
err24
PREAI
errKirsch, P. D.; Quevedo-Lopez, M. A.; Krishnan, S. A.; Lee, B. H.; Pant, G.; Kim, M. J.; Wallace, R. M.; Gnade, B. E.
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Work function engineering using lanthanum oxide interfacial layers
err2006-12-04
err104
PREAI
errAlshareef, H. N.; Quevedo-Lopez, M.; Wen, H. C.; Harris, R.; Kirsch, P.; Majhi, P.; Lee, B. H.; Jammy, R.; Lichtenwalner, D. J.; Jur, J. S.; Kingon, A. I.
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Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics
err2006-07-19
err37
PREAI
errPant, G.; Gnade, A.; Kim, M. J.; Wallace, R. M.; Gnade, B. E.; Quevedo-Lopez, M. A.; Kirsch, P. D.; Krishnan, S.
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Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics
err2006-01-17
err52
PREAI
errPant, G; Gnade, A; Kim, MJ; Wallace, RM; Gnade, BE; Quevedo-Lopez, MA; Kirsch, PD
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Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability
err2005-12-19
err75
PREAI
errQuevedo-Lopez, MA; Krishnan, SA; Kirsch, PD; Pant, G; Gnade, BE; Wallace, RM
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