Brian M. McSkimming - Publications, H-index & Citations

Brian M. McSkimming

University System of Ohio

14H指数

30论文数

617被引数

收录论文 6

发表时间

Multi-Institutional Study on Impostor Phenomenon 多机构关于Impostor Phenomenon的研究

ACM Transactions on Computing Education

IF3.8

2025-09-18

PREAI

Sophia Krause-Levy; Andrew Petersen; Oladele Oladunjoye Campbell; William G. Griswold; Leo Porter; Oluwatoyin Adelakun-Adeyemo; Jennifer Campbell; Michelle Craig; Adrienne Decker; Sebastian Dziallas; Carrie Demmans Epp; David R. Gibson; Yekaterina Kharitonova; Devorah Kletenik; David L. Largent; Emma McDonald; Brian M. McSkimming; Tina L. Peterson; Caroline Sih; Cynthia Taylor; Neena Thota

Correlation of a generation-recombination center with a deep level trap in GaN (vol 106, 102101, 2015)

APPLIED PHYSICS LETTERS

IF3.6

2015-04-14

OAAI

Nguyen, X. S.; Lin, K.; Zhang, Z.; McSkimming, B.; Arehart, A. R.; Speck, J. S.; Ringel, S. A.; Fitzgerald, E. A.; Chua, S. J.

Growth diagram of N-face GaN (000(1)over-bar) grown at high rate by plasma-assisted molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2014-01-06

PREAI

Okumura, Hironori; McSkimming, Brian M.; Huault, Thomas; Chaix, Catherine; Speck, James S.

Impact of proton irradiation on deep level states in n-GaN

APPLIED PHYSICS LETTERS

IF3.6

2013-07-22

PREAI

Zhang, Z.; Arehart, A. R.; Cinkilic, E.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; McSkimming, B.; Speck, J. S.; Ringel, S. A.

Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures

APPLIED PHYSICS LETTERS

IF3.6

2012-09-03

OAAI

Son, Junwoo; Chobpattana, Varistha; McSkimming, Brian M.; Stemmer, Susanne

p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents

APPLIED PHYSICS LETTERS

IF3.6

2010-12-01

PREAI

Hurni, Christophe A.; Bierwagen, Oliver; Lang, Jordan R.; McSkimming, Brian M.; Gallinat, Chad S.; Young, Erin C.; Browne, David A.; Mishra, Umesh K.; Speck, James S.

研究方向