J. D. Guo - Publications, H-index & Citations

J. D. Guo

zhejiang university

9H指数

27论文数

580被引数

收录论文 9

发表时间

A cascaded and efficient machine learning framework for wafer-level process modeling of trench MOSFETs 级联且高效的机器学习框架用于沟槽MOSFET的晶圆级工艺建模

Materials Science in Semiconductor Processing

IF4.6

2026-08-01

PREAI

Geng, Mingqiang; Sun, Yuting; Guo, Jianming; Gao, Dawei; Ni, Dong

High-fidelity multilayer etching in virtual fabrication via offline reinforcement learning 通过离线强化学习实现虚拟制造中的高保真多层刻蚀

Materials Science in Semiconductor Processing

IF4.6

2026-05-23

PREAI

Guo, Jianming; Fu, Lin; Geng, Mingqiang; Bai, Hao; Xu, Qingshuang; Gao, Dawei; Qi, Dianyu; Shi, Xiaoming; Ni, Dong

A Transformer-Based Sequence Prediction Architecture for Etch Profile Evolution in Semiconductor Manufacturing 基于Transformer的半导体制造中刻蚀轮廓演变的序列预测架构

IEEE Transactions on Semiconductor Manufacturing

IF2.3

2026-05-01

PREAI

Guo, Jianming; Ren, Kun; Gao, Dawei; Ni, Dong

Accurate and Efficient Process Modeling and Inverse Optimization for Trench Metal Oxide Semiconductor Field Effect Transistors: A Machine Learning Proxy Approach 精确且高效的全沟槽金属氧化物半导体场效应晶体管工艺建模与逆向优化：一种机器学习代理方法

PROCESSES

IF2.8

2025-05-16

OAAI

Geng, Mingqiang; Guo, Jianming; Sun, Yuting; Gao, Dawei; Ni, Dong

Optimizing Plasma Etching: Integrating Precise Three-Dimensional Etching Simulation and Machine Learning for Multi-Objective Optimization

IEEE ACCESS

IF3.6

2024-01-01

OAAI

Guo, Jianming; Geng, Mingqiang; Ren, Kun; Ni, Dong; Gao, Dawei

Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures

APPLIED PHYSICS LETTERS

IF3.6

1997-05-12

PREAI

Lin, CF; Cheng, HC; Huang, JA; Feng, MS; Guo, JD; Chi, GC

The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer

APPLIED PHYSICS LETTERS

IF3.6

1996-06-24

PREAI

Lin, CF; Chi, GC; Feng, MS; Guo, JD; Tsang, JS; Hong, JMH

X-ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layers

APPLIED PHYSICS LETTERS

IF3.6

1996-06-10

PREAI

Lee, CH; Chi, GC; Lin, CF; Feng, MS; Guo, JD

A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films

APPLIED PHYSICS LETTERS

IF3.6

1996-01-08

PREAI

Guo, JD; Lin, CI; Feng, MS; Pan, FM; Chi, GC; Lee, CT

研究方向