Shin–ichi Nishizawa - Publications, H-index & Citations

Shin–ichi Nishizawa

Kyushu University

21H指数

225论文数

1.7K被引数

收录论文 15

发表时间

Study on dislocation propagation in trench structures during scaled Si-IGBTs thermal oxidation 沟槽结构中Si-IGBTs热氧化过程中位错传播的研究

Japanese Journal of Applied Physics

IF1.8

2025-12-01

PREAI

Cai, Bozhou; Yuan, Jiuyang; Miyamura, Yoshiji; Saito, Wataru; Nishizawa, Shin-ichi

Reconstruction of physical-vapor-transport SiC growth setup for large crystal height

APPLIED PHYSICS EXPRESS

IF2.2

2025-10-01

PREAI

Nakamura, Daisuke; Nishizawa, Shin-ichi

Estimating of IGBT Bond Wire Lift-Off Trend Using Convolutional Neural Network (CNN)基于卷积神经网络 (CNN) 的IGBT键合线提离趋势估计

IEEE ACCESS

IF3.6

2024-01-01

OAAI

Mamee, Thatree; Lou, Zaiqi; Hata, Katsuhiro; Takamiya, Makoto; Sakurai, Takayasu; Nishizawa, Shin-Ichi; Saito, Wataru

Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping 带有SiC MPS二极管的并联SiC mosfet断路器，用于雪崩电压钳位

IEEE OPEN JOURNAL OF POWER ELECTRONICS

IF3.9

2024-01-01

OAAI

Takamori, Taro; Wada, Keiji; Saito, Wataru; Nishizawa, Shin-ichi

Adjustable Current Limiting Function With a Monolithically Integrated SiC Circuit Breaker Device

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS

IF4.5

2023-09-01

OAAI

Takamori, Taro; Wada, Keiji; Boettcher, Norman; Erlbacher, Tobias; Saito, Wataru; Nishizawa, Shin-ichi

IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control

IEEE ACCESS

IF3.6

2023-01-01

OAAI

Lou, Zaiqi; Mamee, Thatree; Hata, Katsuhiro; Takamiya, Makoto; Nishizawa, Shin-Ichi; Saito, Wataru

Turn-OFF dV/dt Controllability in 1.2-kV MOS-Bipolar Devices

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2021-03-01

OAAI

Luo, Peng; Madathil, Sankara Narayanan Ekkanath; Nishizawa, Shin-Ichi; Saito, Wataru

EMILIN-1 is important for age-related changes in elastic fibre structure

JOURNAL OF INVESTIGATIVE DERMATOLOGY

IF5.7

2019-09-01

OAAI

Tohgasaki, T.; Kondo, S.; Nishizawa, S.; Suzuki, T.; Ishiwatari, S.; Matsukuma, S.; Ishikawa, S.; Takeda, A.

Design and Analysis of a New Evaluation Circuit for Capacitors Used in a High-Power Three-Phase Inverter

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

IF7.2

2016-05-01

OAAI

Hasegawa, Kazunori; Omura, Ichiro; Nishizawa, Shin-ichi

Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide

CRYSTAL GROWTH & DESIGN

IF3.4

2012-03-08

PREAI

Leone, Stefano; Kordina, Olof; Henry, Anne; Nishizawa, Shin-ichi; Danielsson, Orjan; Janzen, Erik

Observation of surface polarity dependent phonons in SiC by deep ultraviolet Raman spectroscopy

PHYSICAL REVIEW B

IF3.7

2007-03-23

PREAI

Nakashima, S.; Mitani, T.; Tomita, T.; Kato, T.; Nishizawa, S.; Okumura, H.; Harima, H.

Deep ultraviolet raman microspectroscopic characterization of polishing-induced surface damage in SiC crystals

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2006-01-01

PREAI

Nakashima, S; Kato, T; Nishizawa, S; Mitani, T; Okumura, H; Yamamoto, T

Fabrication of 1.4-kV mesa-type p+-n diodes with avalanche breakdown and without forward degradation on high-quality 6H-SiC substrate

APPLIED PHYSICS LETTERS

IF3.6

2003-07-14

PREAI

Tanaka, Y; Nishizawa, S; Fukuda, K; Arai, K; Ohno, T; Oyanagi, N; Suzuki, T; Yatsuo, T

DSMC analysis of thermal transpiration of capacitance diaphragm gauge

VACUUM

IF3.9

2002-09-01

PREAI

Nishizawa, S; Hirata, M

Interfacial phenomena of molten silicon: Marangoni flow and surface tension

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES

IF3.7

1998-04-15

PREAI

Hibiya, T; Nakamura, S; Mukai, K; Niu, ZG; Imaishi, N; Nishizawa, S; Yoda, S; Koyama, M

研究方向