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J

Jan Van Houdt

imec

33H指数
372论文数
4.8K被引数
收录论文 20
发表时间
Seed layer effect on the phase evolution of the La-doped hafnium zirconium oxide with back-end-of-line compatibility种子层效应对与后端工艺兼容的La掺杂铪锆氧化物相演变的影响
err2025-10-01
err0
PREAI
errDae Seon Kwon; Jasper Bizindavyi; Pradyumna Kumar Parida; Gourab De; Hyun-Cheol Kim; Olivier Richard; Paola Favia; Attilio Belmonte; Annelies Delabie; Laura Nyns; Gouri Sankar Kar; Jan Van Houdt; Mihaela Ioana Popovici
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Switching of a magnetic tunnel junction by voltage-controlled magnetic anisotropy
err2025-01-21
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PREAI
errFavaro, D.; Kim, W.; Ranjbar, S.; Monteiro, M. Gama; Carpenter, R.; Rao, S.; Van Beek, S.; Labbate, L.; Van Houdt, J.; Temst, K.; Couet, S.
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Investigation of the role of in-plane stress behavior on ferroelectric properties of scaled-up hafnium zirconium oxide superlattices研究面内应力行为对放大尺寸的铪锆氧化物超晶格铁电性能的影响
err2025-01-01
err0
PREAI
errDe, Gourab; Popovici, Mihaela Ioana; Mukherjee, Shankha; Kwon, Dae Seon; Luciano, Federica; Murphy, Tony; Kar, Gouri Sankar; Delabie, Annelies; Van Houdt, Jan
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Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility
err2024-07-26
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PREAI
errKwon, Dae Seon; Bizindavyi, Jasper; De, Gourab; Belmonte, Attilio; Delabie, Annelies; Nyns, Laura; Kar, Gouri Sankar; Van Houdt, Jan; Popovici, Mihaela Ioana
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Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory
err2023-07-19
err0
errOAAI
errChang, Ting-Yu; Wang, Kuan-Chi; Liu, Hsien-Yang; Hseun, Jing-Hua; Peng, Wei-Cheng; Ronchi, Nicolo; Celano, Umberto; Banerjee, Kaustuv; Van Houdt, Jan; Wu, Tian-Li
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High-Endurance Ferroelectric (La, Y) and (La, Gd) Co-Doped Hafnium Zirconate Grown by Atomic Layer Deposition通过原子层沉积生长的高耐久性铁电 (La,Y) 和 (La,Gd) 共掺杂锆酸铪
err2022-04-06
err31
errOAAI
errPopovici, Mihaela Ioana; Walke, Amey M.; Bizindavyi, Jasper; Meersschaut, Johan; Banerjee, Kaustuv; Potoms, Goedele; Katcko, Kostantine; Van den Bosch, Geert; Delhougne, Romain; Kar, Gouri Sankar; Van Houdt, Jan
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Strain and ferroelectricity in wurtzite ScxAl1-xN materials
err2021-10-28
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PREAI
errClima, Sergiu; Pashartis, Christopher; Bizindavyi, Jasper; McMitchell, Sean R. C.; Houssa, Michel; Van Houdt, Jan; Pourtois, Geoffrey
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Impact of ambient temperature on the switching of voltage-controlled perpendicular magnetic tunnel junction
err2021-03-23
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PREAI
errWu, Y. C.; Kim, W.; Van Beek, S.; Couet, S.; Carpenter, R.; Rao, S.; Kundu, S.; Van Houdt, J.; Groeseneken, G.; Crotti, D.; Kar, G. S.
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Elucidating possible crystallographic origins of wake-up mechanisms in ferroelectric hafnia
err2021-03-02
err16
errOAAI
errMcMitchell, Sean R. C.; Clima, Sergiu; Ronchi, Nicolo'; Banerjee, Kaustuv; Celano, Umberto; Popovici, Mihaela; Di Piazza, Luca; Van den Bosch, Geert; Van Houdt, Jan
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Identifying alternative ferroelectric materials beyond Hf(Zr)O2
err2020-12-28
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errOAAI
errGuo, Jing; Clima, Sergiu; Pourtois, Geoffrey; Van Houdt, Jan
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Defect profiling in FEFET Si:HfO2 layers
err2020-11-17
err30
errOAAI
errO'Sullivan, B. J.; Putcha, V; Izmailov, R.; Afanas'ev, V; Simoen, E.; Jung, T.; Higashi, Y.; Degraeve, R.; Truijen, B.; Kaczer, B.; Ronchi, N.; McMitchell, S.; Banerjee, K.; Clima, S.; Breuil, L.; Van den Bosch, G.; Linten, D.; Van Houdt, J.
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Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges掺杂硅的哈夫尼亚中的铁电性: 在没有筛选电荷的情况下探测挑战
err2020-08-11
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errOAAI
errCelano, Umberto; Gomez, Andres; Piedimonte, Paola; Neumayer, Sabine; Collins, Liam; Popovici, Mihaela; Florent, Karine; McMitchell, Sean R. C.; Favia, Paola; Drijbooms, Chris; Bender, Hugo; Paredis, Kristof; Di Piazza, Luca; Jesse, Stephen; Van Houdt, Jan; van der Heide, Paul
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The flexoelectric effect in Al-doped hafnium oxide
err2018-01-01
err24
PREAI
errCelano, Umberto; Popovici, Mihaela; Florent, Karine; Lavizzari, Simone; Favia, Paola; Paulussen, Kris; Bender, Hugo; di Piazza, Luca; Van Houdt, Jan; Vandervorst, Wilfried
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Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability
err2012-07-30
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PREAI
errPadovani, Andrea; Arreghini, Antonio; Vandelli, Luca; Larcher, Luca; Van den Bosch, Geert; Van Houdt, Jan
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Lanthanide Aluminates as Dielectrics for Non-Volatile Memory Applications: Material Aspects
err2011-06-09
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PREAI
errAdelmann, C.; Swerts, J.; Richard, O.; Conard, T.; Popovici, M.; Meersschaut, J.; Afanas'ev, V. V.; Breuil, L.; Cacciato, A.; Opsomer, K.; Brijs, B.; Tielens, H.; Pourtois, G.; Bender, H.; Jurczak, M.; Van Houdt, J.; Van Elshocht, S.; Kittl, J. A.
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First-principles modeling of intrinsic and extrinsic defects in γ-Al2O3
err2010-11-24
err15
errOAAI
errSankaran, K.; Pourtois, G.; Degraeve, R.; Zahid, M. B.; Rignanese, G. -M.; Van Houdt, J.
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Profiling of traps in SiO2/Al2O3 gate stack by the charge pumping technique
err2006-12-01
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PREAI
errCrupi, Isodiana; Degraeve, Robin; Govoreanu, Bogdan; Brunco, David P.; Roussel, Philippe; Van Houdt, Jan
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