Robert Kucharski - Publications, H-index & Citations

Robert Kucharski

polish academy of sciences

23H指数

124论文数

1.6K被引数

收录论文 23

发表时间

On the vacancy diffusion from ammonothermally grown GaN to GaN epilayer 关于从氨热法生长的GaN到GaN外延层的空位扩散

Materials Science in Semiconductor Processing

IF4.6

2026-05-12

OAAI

František Hájek; Jakub Čížek; Pavel Eichler; Robert Czernecki; Ewa Grzanka; Mike Leszczynski; Radek Fučík; Jan Kuriplach; Tomáš Hubáček; Pavel Hubík; Robert Kucharski; Tomasz Sochacki; Roman Hrytsak; Maciej Oskar Liedke; Eric Hirschmann; Andreas Wagner; Alice Hospodková

Aluminum gallium nitride grown by halide vapor phase epitaxy: growth on misoriented gallium nitride substrates 卤化物气相外延生长的铝镓氮化物：在偏离取向的氮化镓衬底上的生长

Applied Surface Science

IF6.9

2026-03-31

PREAI

Arianna Jaroszynska; Petro Sadovy; Lutz Kirste; Karol Pozyczka; Robert Kucharski; Michal Bockowski; Tomasz Sochacki

Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates 在蓝宝石衬底和氨热法GaN衬底上生长的GaN肖特基二极管中反向电流机制的对比

Journal of Physics D: Applied Physics

IF3.2

2026-03-26

OAAI

B Orfao; M Abou Daher; H Bouillaud; Y Roelens; P Prystawko; R Kucharski; M Bockowski; M Zaknoune

Effects of Substrate Miscut on Growth Instabilities in Homoepitaxially Grown GaN/AlGaN System 衬底倾角对同质外延生长GaN/AlGaN体系中生长不稳定性的影响

Crystal Growth & Design

IF0

2026-02-25

PREAI

Henryk Teisseyre; Stéphane Vézian; Piotr Wojnar; Robert Kucharski; Tomasz Sochacki; Michał Boćkowski; Yvon Cordier; Maria Vladimirova; Benjamin Damilano

Vacancy complexes in GaN single crystals

Materialia

IF2.9

2026-02-06

PREAI

Jakub Čížek; František Hájek; Ewa Grzanka; Filip Dominec; Karla Kuldová; Tomáš Hubáček; Alice Hospodková; Roman Hrytsak; Mike Leszczynski; Tomasz Sochacki; Robert Kucharski; Robert Czernecki; Rudolf Shymon; Romana Kučerková; Jan Kuriplach; Oksana Melikhova

Thermodynamic Analysis of GaN Solubility in Supercritical Ammonia: Influence of Mineralizer Concentration and Pressure 在超临界氨中GaN溶解度的热力学分析：矿化剂浓度和压力的影响

Crystal Growth and Design

IF3.4

2025-12-01

PREAI

Grabianska, Karolina; Kucharski, Robert; Kempisty, Pawel; Sochacki, Tomasz; Bockowski, Michal

Bragg diffraction imaging characterization of crystal defects in GaN (0001) substrates: Comparison of the growth method and the seed approach GaN (0001) 衬底中晶体缺陷的Bragg衍射成像表征：生长方法和籽晶方法的比较

Progress in Crystal Growth and Characterization of Materials

IF1.9

2025-05-08

PREAI

Lutz Kirste; Thu Nhi Tran-Caliste; Tomasz Sochacki; Jan L. Weyher; Patrik Straňák; Robert Kucharski; Karolina Grabianska; José Baruchel; Michal Bockowski

Photo-Excited Carrier Dynamics in Ammonothermal Mn-Compensated GaN Semiconductor

MATERIALS

IF3.2

2024-12-07

OAAI

Scajev, Patrik; Prystawko, Pawel; Kucharski, Robert; Kasalynas, Irmantas

Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN

MATERIALS

IF3.2

2024-03-01

OAAI

Zajac, Marcin; Kaminski, Pawel; Kozlowski, Roman; Litwin-Staszewska, Elzbieta; Piotrzkowski, Ryszard; Grabianska, Karolina; Kucharski, Robert; Jakiela, Rafal

Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN

MATERIALS

IF3.2

2023-04-25

OAAI

Sochacki, Tomasz; Kucharski, Robert; Grabianska, Karolina; Weyher, Jan L. L.; Zajac, Magdalena A. A.; Iwinska, Malgorzata; Kirste, Lutz; Bockowski, Michal

Large-Scale Defect Clusters with Hexagonal Honeycomb-like Arrangement in Ammonothermal GaN Crystals

MATERIALS

IF3.2

2022-10-09

OAAI

Kirste, Lutz; Caliste, Thu Nhi Tran Thi; Weyher, Jan L.; Smalc-Koziorowska, Julita; Zajac, Magdalena A.; Kucharski, Robert; Sochacki, Tomasz; Grabianska, Karolina; Iwinska, Malgorzata; Detlefs, Carsten; Danilewsky, Andreas N.; Bockowski, Michal; Baruchel, Jose

Fundamental Studies on Crystallization and Reaching the Equilibrium Shape in Basic Ammonothermal Method: Growth on a Native Lenticular Seed

MATERIALS

IF3.2

2022-06-30

OAAI

Sochacki, Tomasz; Kucharski, Robert; Grabianska, Karolina; Weyher, Jan L.; Iwinska, Malgorzata; Bockowski, Michal; Kirste, Lutz

Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography

MATERIALS

IF3.2

2021-09-22

OAAI

Kirste, Lutz; Grabianska, Karolina; Kucharski, Robert; Sochacki, Tomasz; Lucznik, Boleslaw; Bockowski, Michal

Pulsed photo-ionization spectroscopy of traps in as-grown and neutron irradiated ammonothermally synthesized GaN

SCIENTIFIC REPORTS

IF3.9

2019-02-06

OAAI

Gaubas, E.; Ceponis, T.; Meskauskaite, D.; Mickevicius, J.; Pavlov, J.; Rumbauskas, V.; Grigonis, R.; Zajac, M.; Kucharski, R.

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts 具有再生欧姆接触的半绝缘ammono-gan衬底上的AlGaN/GaN高电子迁移率晶体管

MICROMACHINES

IF3

2018-10-25

OAAI

Wojtasiak, Wojciech; Goralczyk, Marcin; Gryglewski, Daniel; Zajac, Marcin; Kucharski, Robert; Prystawko, Pawel; Piotrowska, Anna; Ekielski, Marek; Kaminska, Eliana; Taube, Andrzej; Wzorek, Marek

Study of neutron irradiated structures of ammonothermal GaN

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2017-02-28

PREAI

Gaubas, E.; Ceponis, T.; Deveikis, L.; Meskauskaite, D.; Miasojedovas, S.; Mickevicius, J.; Pavlov, J.; Pukas, K.; Vaitkus, J.; Velicka, M.; Zajac, M.; Kucharski, R.

Ultraviolet laser diodes grown on semipolar (20(2)over-bar1) GaN substrates by plasma-assisted molecular beam epitaxy (vol 102, 251101, 2013)通过等离子体辅助分子束外延在半极性 (20(2)over-bar1) GaN衬底上生长的紫外激光二极管 (102卷，251101，2013)

APPLIED PHYSICS LETTERS

IF3.6

2014-05-29

PREAI

Sawicka, M.; Muziol, G.; Turski, H.; Grzanka, S.; Grzanka, E.; Smalc-Koziorowska, J.; Weyher, J. L.; Cheze, C.; Albrecht, M.; Kucharski, R.; Perlin, P.; Skierbiszewski, C.

Ultraviolet light-emitting diodes grown by plasma- assisted molecular beam epitaxy on semipolar GaN (2021) substrates (vol 102, 111107, 2013)通过等离子体辅助分子束外延在半极性GaN (2021) 衬底上生长的紫外发光二极管 (102卷，111107，2013)

APPLIED PHYSICS LETTERS

IF3.6

2014-05-23

OAAI

Sawicka, M.; Cheze, C.; Turski, H.; Muziol, G.; Grzanka, S.; Hauswald, C.; Brandt, O.; Siekacz, M.; Kucharski, R.; Remmele, T.; Albrecht, M.; Krysko, M.; Grzanka, E.; Sochacki, T.; Skierbiszewski, C.

Graded-index separate confinement heterostructure InGaN laser diodes

APPLIED PHYSICS LETTERS

IF3.6

2013-12-26

OAAI

Stanczyk, S.; Czyszanowski, T.; Kafar, A.; Goss, J.; Grzanka, S.; Grzanka, E.; Czernecki, R.; Bojarska, A.; Targowski, G.; Leszczynski, M.; Suski, T.; Kucharski, R.; Perlin, P.

Ultraviolet laser diodes grown on semipolar (20(2)over-bar1) GaN substrates by plasma-assisted molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2013-06-24

OAAI

Sawicka, M.; Muziol, G.; Turski, H.; Grzanka, S.; Grzanka, E.; Smalc-Koziorowska, J.; Weyher, J. L.; Cheze, C.; Albrecht, M.; Kucharski, R.; Perlin, P.; Skierbiszewski, C.

研究方向