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O

O. Ambacher

university of freiburg

73H指数
964论文数
3.2W被引数
收录论文 150
发表时间
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Strain-driven amorphization in Al1-xYxN thin films and lattice-engineering stabilization illustrated by In1-xYxN应变驱动的Al₁₋ₓYₓN薄膜中的非晶化及由In₁₋ₓYₓN例证的晶格工程稳定化
errJournal of Applied Physics
IF2.5
err2026-05-14
err0
PREAI
errAfshar, N.; Wolff, N.; Horich, F.; Stranak, P.; Kirste, L.; Kienle, L.; Dadgar, A.; Ambacher, O.
err分享
err收藏
Effect of Heating/Cooling Rate and Temperature on Microstructure and Electrical Properties of Sputter-Deposited PZT Thin Films Crystallized by Conventional Furnace Annealing加热/冷却速率和温度对传统炉退火结晶的溅射沉积PZT薄膜微观结构和电学性能的影响
errMaterials
IF3.2
err2026-04-28
err0
errOAAI
errManfred Wich; Jan Helmerich; Philipp Ott; Oliver Ambacher; Stefan Johann Rupitsch
err分享
err收藏
Performance enhancement of AlGaN/GaN-based high electron mobility transistors with sputtered AlScN gate dielectric采用溅射AlScN栅介质的AlGaN/GaN基高电子迁移率晶体管的性能提升
errJournal of Applied Physics
IF2.5
err2026-02-14
err1
errOAAI
errYassine, A.; Driad, R.; Nair, A.; Ott, P.; Kirste, L.; Stranak, P.; Czap, H.; Mikulla, M.; Yassine, M.; Ambacher, O.
err分享
err收藏
Experimental demonstration of wurtzite to rock salt transition and bandgap evolution in In1-xScxN grown by sputtering溅射生长的In1-xScxN中纤锌矿到岩盐相变及带隙演变的实验演示
errJournal of Applied Physics
IF2.5
err2026-01-07
err2
errOAAI
errAfshar, N.; Yassine, M.; Liebscher, W.; Horich, F.; Dadgar, A.; Ambacher, O.
err分享
err收藏
Electrical properties of SiN y /Al1-x Sc x N/GaN-based metal-insulator-semiconductor structuresSiNy/Al1-xScxN/GaN基金属-绝缘体-半导体结构的电学特性
errJOURNAL OF APPLIED PHYSICS
IF2.5
err2025-05-15
err0
errOAAI
errYassine, A.; Yassine, M.; Streicher, I.; Driad, R.; Kirste, L.; Stranak, P.; Doering, P.; Leone, S.; Ambacher, O.
err分享
err收藏
A comprehensive review of yttrium aluminum nitride: crystal structure, growth techniques, properties, and applications一篇关于氮化钇铝的全面综述：晶体结构、生长技术、性质与应用
errfood frontiers
IF2.9
err2025-02-04
err0
errOAAI
errAfshar, N.; Yassine, M.; Ambacher, O.
err分享
err收藏
Structural and electrical properties of fiber textured and epitaxial molybdenum thin films prepared by magnetron sputter epitaxy磁控溅射外延制备的纤维织构和外延钼薄膜的结构和电学性能
errAPPLIED PHYSICS LETTERS
IF3.6
err2025-01-02
err0
errOAAI
errSundarapandian, Balasubramanian; Raghuwanshi, Mohit; Stranak, Patrik; Yu, Yuan; Lyu, Haiyan; Prescher, Mario; Kirste, Lutz; Ambacher, Oliver
err分享
err收藏
Temperature-dependent properties of wurtzite and rock salt Al1-xScxN for applications in BAW resonators
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2024-11-14
err0
PREAI
errMihalic, S.; Wade, E.; Ott, P.; Ambacher, O.
err分享
err收藏
Clarification of the spontaneous polarization direction in crystals with wurtzite structure
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-07-22
err3
PREAI
errFichtner, Simon; Yassine, Mohamed; Van de Walle, Chris G.; Ambacher, Oliver
err分享
err收藏
Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-05-01
err5
errOAAI
errSundarapandian, Balasubramanian; Tran, Dat Q.; Kirste, Lutz; Stranak, Patrik; Graff, Andreas; Prescher, Mario; Nair, Akash; Raghuwanshi, Mohit; Darakchieva, Vanya; Paskov, Plamen P.; Ambacher, Oliver
err分享
err收藏
Understanding Interfaces in AlScN/GaN Heterostructures
errADVANCED FUNCTIONAL MATERIALS
IF19
err2024-04-24
err2
errOAAI
errStreicher, Isabel; Leone, Stefano; Zhang, Meiling; Tlemcani, Taoufik Slimani; Bah, Micka; Stranak, Patrik; Kirste, Lutz; Prescher, Mario; Yassine, Ali; Alquier, Daniel; Ambacher, Oliver
err分享
err收藏
Thermal expansion coefficient of ScN(111) thin films grown on Si(111) determined by X-ray diffraction
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-02-02
err4
errOAAI
errCiprian, L.; Mihalic, S.; Luettich, C.; Hoerich, F.; Wade, E.; Christian, B.; Dadgar, A.; Ambacher, O.
err分享
err收藏
Power Module Design for GaN Transistors Enabling High Switching Speed in Multi-Kilowatt Applications
errENERGY TECHNOLOGY
IF3.6
err2023-07-20
err2
errOAAI
errWoehrle, Dennis; Burger, Bruno; Ambacher, Oliver
err分享
err收藏
Defect Location in Laterally Aligned Tin Oxide Nanowires: The Role of Growth Direction, Interface Dimensionality, and Catalyst
errJOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
err2023-05-26
err0
PREAI
errBurger, Jasmin-Clara; Gutsch, Sebastian; Wollersen, Vanessa; Wang, Di; Christian, Bjorn; Fu, Zhe; Ambacher, Oliver; Kubel, Christian; Zacharias, Margit
err分享
err收藏
Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal-Organic Chemical Vapor Deposition
errCRYSTAL GROWTH & DESIGN
IF3.4
err2023-01-05
err13
PREAI
errStreicher, Isabel; Leone, Stefano; Manz, Christian; Kirste, Lutz; Prescher, Mario; Waltereit, Patrick; Mikulla, Michael; Quay, Rudiger; Ambacher, Oliver
err分享
err收藏
Rayleigh waves in nonpolar Al0.7Sc0.3N(1120) films with enhanced electromechanical coupling and quality factor
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-11-08
err8
errOAAI
errFeil, N. M.; Nair, A.; Pashchenko, V.; Kirste, L.; Ambacher, O.
err分享
err收藏
Broadband 400-GHz InGaAs mHEMT Transmitter and Receiver S-MMICs宽带400-GHz InGaAs mHEMT发射器和接收器s-mmics
errIEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
IF4
err2021-11-01
err16
errOAAI
errGashi, Bersant; John, Laurenz; Meier, Dominik; Roesch, Markus; Wagner, Sandrine; Tessmann, Axel; Leuther, Arnulf; Ambacher, Oliver; Quay, Ruediger
err分享
err收藏
On the exceptional temperature stability of ferroelectric Al1-xScxN thin films
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-06-10
err70
errOAAI
errIslam, Md Redwanul; Wolff, Niklas; Yassine, Mohamed; Schoenweger, Georg; Christian, Bjorn; Kohlstedt, Hermann; Ambacher, Oliver; Lofink, Fabian; Kienle, Lorenz; Fichtner, Simon
err分享
err收藏
First-principles calculation of electroacoustic properties of wurtzite (Al,Sc)N
errPHYSICAL REVIEW B
IF3.7
err2021-03-11
err56
errOAAI
errUrban, Daniel F.; Ambacher, Oliver; Elsaesser, Christian
err分享
err收藏
Building Blocks for GaN Power Integration
errIEEE ACCESS
IF3.6
err2021-01-01
err24
errOAAI
errBasler, Michael; Reiner, Richard; Moench, Stefan; Benkhelifa, Fouad; Doering, Philipp; Waltereit, Patrick; Quay, Ruediger; Ambacher, Oliver
err分享
err收藏

研究方向

暂无研究方向
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H 指数: 137 · 论文数: 1.7K
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C
Chris G. Van de Walle
H 指数: 123 · 论文数: 771
J
James S. Speck
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Roland A. Fischer
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