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M

M. A. Reshchikov

physics

43H指数
247论文数
1.9W被引数
收录论文 56
发表时间
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Dual nature of the LiZn acceptor in ZnOZnO中LiZn受体的双重性质
errJournal of Luminescence
IF3.6
err2026-06-20
err0
PREAI
errMichael A. Reshchikov
err分享
err收藏
Spectroscopy of point defects in semiconductors半导体中点缺陷的光谱学
errMRS Bulletin
IF4.9
err2026-05-07
err0
PREAI
errMatthew D. McCluskey; Michael A. Reshchikov; Hemant Ghadi; Joe F. McGlone; Steven A. Ringel; Patrick M. Lenahan; Kai-Mei C. Fu; Filip Tuomisto
err分享
err收藏
Luminescence Properties of Defects in GaN: Solved and Unsolved ProblemsGaN中缺陷的发光特性：已解决的问题与未解决的问题
errSOLIDS
IF2.4
err2025-09-10
err0
errOAAI
errReshchikov, Michael A.
err分享
err收藏
P-type conductivity in GaN:Be epitaxial layersGaN:Be外延层的P型导电性
errJOURNAL OF APPLIED PHYSICS
IF2.5
err2025-09-07
err1
errOAAI
errZajac, M.; Reshchikov, M. A.; McEwen, B.; Shahendipour-Sandvik, F.
err分享
err收藏
Red luminescence band in undoped GaN未掺杂GaN中的红光发光带
errJournal of Luminescence
IF3.6
err2025-06-18
err0
PREAI
errMichael A. Reshchikov
err分享
err收藏
Identity of the shallowest acceptor in GaN
errPHYSICAL REVIEW B
IF3.7
err2025-01-16
err1
PREAI
errReshchikov, M. A.; Demchenko, D. O.; Mcewen, B.; Shahedipour-Sandvik, F.
err分享
err收藏
Passivation of acceptors in GaN by hydrogen and their activation通过氢对GaN中受体的钝化及其激活
errnanotechnology
IF2.8
err2025-01-07
err1
PREAI
errReshchikov, M. A.; Andrieiev, O.; Vorobiov, M.; Ye, D.; Demchenko, D. O.; Mcewen, B.; Shahedipour-Sandvik, F.
err分享
err收藏
Koopmans-tuned Heyd-Scuseria-Ernzerhof hybrid functional calculations of acceptors in GaN
errPHYSICAL REVIEW B
IF3.7
err2024-07-15
err2
PREAI
errDemchenko, D. O.; Vorobiov, M.; Andrieiev, O.; Reshchikov, M. A.; McEwen, B.; Shahedipour-Sandvik, F.
err分享
err收藏
Analysis of Zn diffusion in various crystallographic directions of GaN grown by HVPE
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2023-11-01
err0
errOAAI
errSierakowski, Kacper; Jakiela, Rafal; Jaroszynska, Arianna; Fijalkowski, Michal; Sochacki, Tomasz; Iwinska, Malgorzata; Turek, Marcin; Uedono, Akira; Reshchikov, Michael A.; Bockowski, Michal
err分享
err收藏
MOCVD Growth and Characterization of Be-Doped GaN
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2022-08-08
err13
errOAAI
errMcEwen, Benjamin; Reshchikov, Michael A.; Rocco, Emma; Meyers, Vincent; Hogan, Kasey; Andrieiev, Oleksandr; Vorobiov, Mykhailo; Demchenko, Denis O.; Shahedipour-Sandvik, Fatemeh
err分享
err收藏
Photoluminescence related to Ca in GaN
errPHYSICAL REVIEW B
IF3.7
err2022-07-28
err13
PREAI
errReshchikov, M. A.; Demchenko, D. O.; Vorobiov, M.; Andrieiev, O.; McEwen, B.; Shahedipour-Sandvik, F.; Sierakowski, K.; Jaroszynska, A.; Bockowski, M.
err分享
err收藏
Point defects in beryllium-doped GaN
errPHYSICAL REVIEW B
IF3.7
err2021-12-08
err17
PREAI
errVorobiov, Mykhailo; Andrieiev, Oleksandr; Demchenko, Denis O.; Reshchikov, Michael A.
err分享
err收藏
Passivation of the beryllium acceptor in GaN and a possible route for p-type doping
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-04-05
err12
errOAAI
errDemchenko, Denis O.; Reshchikov, Michael A.
err分享
err收藏
Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry
errSCIENTIFIC REPORTS
IF3.9
err2020-02-10
err31
errOAAI
errReshchikov, M. A.; Vorobiov, M.; Andrieiev, O.; Ding, K.; Izyumskaya, N.; Avrutin, V; Usikov, A.; Helava, H.; Makarov, Yu
err分享
err收藏
Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD
errSCIENTIFIC REPORTS
IF3.9
err2020-01-29
err20
errOAAI
errRocco, Emma; Licata, Olivia; Mahaboob, Isra; Hogan, Kasey; Tozier, Sean; Meyers, Vincent; McEwen, Benjamin; Novak, Steven; Mazumder, Baishakhi; Reshchikov, Michael; Bell, L. Douglas; Shahedipour-Sandvik, F.
err分享
err收藏
Fine structure of another blue luminescence band in undoped GaN
errAPPLIED PHYSICS LETTERS
IF3.6
err2019-12-23
err6
errOAAI
errReshchikov, Michael A.
err分享
err收藏
Unusual properties of the RY3 center in GaN
errPHYSICAL REVIEW B
IF3.7
err2019-07-18
err20
errOAAI
errReshchikov, M. A.; Sayeed, R. M.; Ozgur, U.; Demchenko, D. O.; McNamara, J. D.; Prozheeva, V; Tuomisto, F.; Helava, H.; Usikov, A.; Makarov, Yu
err分享
err收藏
Two charge states of the CN acceptor in GaN: Evidence from photoluminescence
errPHYSICAL REVIEW B
IF3.7
err2018-09-28
err110
errOAAI
errReshchikov, M. A.; Vorobiov, M.; Demchenko, D. O.; Ozgur, U.; Morkoc, H.; Lesnik, A.; Hoffmann, M. P.; Hoerich, F.; Dadgar, A.; Strittmatter, A.
err分享
err收藏
Two yellow luminescence bands in undoped GaN
errSCIENTIFIC REPORTS
IF3.9
err2018-05-25
err62
errOAAI
errReshchikov, M. A.; McNamara, J. D.; Helava, H.; Usikov, A.; Makarov, Yu.
err分享
err收藏
Magnesium acceptor in gallium nitride. I. Photoluminescence from Mg-doped GaN
errPHYSICAL REVIEW B
IF3.7
err2018-05-17
err73
errOAAI
errReshchikov, M. A.; Ghimire, P.; Demchenko, D. O.
err分享
err收藏

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