Shenwu Zhu - Publications, H-index & Citations

Shenwu Zhu

huazhong university of science and technology

9H指数

21论文数

297被引数

收录论文 8

发表时间

Amorphous indium tin oxide transistors for power amplification above 10 GHz 非晶铟锡氧化物晶体管用于10 GHz以上功率放大

Nature Electronics

IF40.9

2025-09-15

PREAI

Qianlan Hu; Shenwu Zhu; Yuzhe Zhu; Chengru Gu; Shiyuan Liu; Ru Huang; Yanqing Wu

3D stacked IGZO 2T0C DRAM array with multibit capability for computing in memory applications 具有多比特能力的3D堆叠IGZO 2T0C DRAM阵列，用于存内计算应用

SCIENCE ADVANCES

IF12.5

2025-05-23

OAAI

Li, Qijun; Hu, Qianlan; Zhu, Shenwu; Zeng, Min; Zhao, Wenjie

Scaled 3D-stacked 2T0C DRAM based on indium-tin-oxide transistors with long data retention and fast write speed of 10 ns 基于铟锡氧化物晶体管的按比例缩放的3D堆叠2T0C DRAM，具有长时间数据保持能力和10 ns的快速写入速度

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2025-05-14

PREAI

Zhu, Shenwu; Hu, Qianlan; Gu, Chengru; Yan, Shiwei; Qiu, Aocheng; Wu, Yanqing

High-Performance Edge-Contact Monolayer Molybdenum Disulfide Transistors 高性能边缘接触单层二硫化钼晶体管

Research

IF10.7

2025-01-17

OAAI

Jiankun Xiao; Xiong Xiong; Xinhang Shi; Shiyuan Liu; Shenwu Zhu; Yue Zhang; Ru Huang; Yanqing Wu

1/f noise of short-channel indium tin oxide transistors under stress

APPLIED PHYSICS LETTERS

IF3.6

2023-06-20

PREAI

Gu, Chengru; Hu, Qianlan; Li, Qijun; Zhu, Shenwu; Kang, Jiyang; Wu, Yanqing

True Nonvolatile High-speed DRAM Cells Using Tailored Ultrathin IGZO 使用定制超薄IGZO的真正非易失性高速DRAM单元

ADVANCED MATERIALS

IF26.8

2023-03-31

PREAI

Hu, Qianlan; Gu, Chengru; Li, Qijun; Zhu, Shenwu; Liu, Shiyuan; Li, Yu; Zhang, Lining; Huang, Ru; Wu, Yanqing

Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stress

SCIENCE ADVANCES

IF12.5

2022-12-23

OAAI

Wu, Yanqing; Hu, Qianlan; Zhu, Shenwu; Gu, Chengru; Liu, Shiyuan; Zeng, Min

High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel

APPLIED PHYSICS LETTERS

IF3.6

2022-12-12

PREAI

Hu, Qianlan; Zhu, Shenwu; Gu, Chengru; Wu, Yanqing

研究方向