3D stacked IGZO 2T0C DRAM array with multibit capability for computing in memory applications

Qijun Li

doi:10.1126/sciadv.adu4323

2025-05-23

DOI：10.1126/sciadv.adu4323

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摘要

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传统动态随机存取存储器（DRAM）技术因持续的数据刷新而在功耗方面面临巨大挑战，因物理尺寸缩放限制而在密度方面面临挑战。近期，基于非晶铟镓锌氧化物（IGZO）的两晶体管零电容（2T0C）DRAM因其极低的关态漏电流而表现出长期数据保持能力。此外，IGZO通道的低热预算使得能够实现单片三维（3D）堆叠，以在平面缩放极限之外实现更高的位密度。然而，IGZO的3D堆叠演示仅限于2T0C DRAM单单元。在本工作中，设计并制造了8×8三维堆叠的IGZO 2T0C DRAM阵列，其优化了电学特性，表现出3位存储能力，保持时间超过100秒。此外，已演示神经网络模型可在图像识别中达到94.95%的准确率，为通过存内计算克服内存墙提供了有前景的途径。

Keyword:

MEMRISTOR

期刊

Science Advances

IF:

12.5

论文数:

2.1W

被引数:

18.1W

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