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M

Meenakshi Chauhan

Institution not clearly identified.

2H指数
12论文数
13被引数
收录论文 3
发表时间
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Selective 10 nm Doping of Si, Se, S, and Sn in $$\beta $$ -Ga2O3 Channel for Enhanced Linearity and Activation energy in nano-AlN/ $$\beta $$ -Ga2O3 MOSHEMT选择性掺杂10 nm的Si、Se、S和Sn于$$\beta $$ -Ga2O3沟道中，以提升纳米-AlN/ $$\beta $$ -Ga2O3 MOSHEMT的线性和激活能
errArabian Journal for Science and Engineering
IF2.9
err2026-05-26
err0
PREAI
errMeenakshi Chauhan; K. Jena; Abdul Naim Khan; T. R. Lenka
err分享
err收藏
Field-plate engineered nano-AlN/β-Ga2O3 MOSHEMTs for high frequency and high efficiency power applications场板工程纳米-AlN/β-Ga2O3 MOSHEMTs用于高频和高效率功率应用
errPHYSICA SCRIPTA
IF2.6
err2025-04-10
err0
PREAI
errChauhan, Meenakshi; Jena, K.; Tomar, Raghuvir; Khan, Abdul Naim; Lenka, T. R.
err分享
err收藏
Advancing Electrical and Analog/RF Performance in Dual-Gate AlGaN/GaN MOSHEMT for High-Power and High-Frequency Applications提升双栅极AlGaN/GaN MOSHEMT的电学及模拟/射频性能，以用于高功率和高频应用
errinternational journal of engineering science
IF2.9
err2025-01-07
err0
PREAI
errKhan, Abdul Naim; Jena, K.; Chatterjee, Gaurav; Chauhan, Meenakshi; Lenka, Trupti Ranjan
err分享
err收藏

研究方向

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合作学者
合作期刊
T
Trupti Ranjan Lenka
H 指数: 26 · 论文数: 266
R
Raghuvir Singh Tomar
H 指数: 25 · 论文数: 168
K
K. Jena
H 指数: 14 · 论文数: 59
G
Gaurav Chatterjee
H 指数: 9 · 论文数: 30
A
Abdul Naim Khan
H 指数: 6 · 论文数: 29
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