Raphaël Sommet - Publications, H-index & Citations

Raphaël Sommet

indian institute of technology (iit) - dharwad

16H指数

197论文数

968被引数

收录论文 8

发表时间

Source-Connected Field-Plate Effects on Static Current, Trap Signature, and Thermal Resistance of AlGaN/GaN High Electron Mobility Transistor 源端连接场板的静态电流、陷阱特征和热阻对AlGaN/GaN高电子迁移率晶体管的影响

Physica Status Solidi A-Applications and Materials Science

IF1.9

2026-01-01

PREAI

Painter, Vaidehi Vijay; Martin, Audrey; Sommet, Raphael; Gaillard, Florent; Raja, P. Vigneshwara

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

IF2.3

2025-12-01

PREAI

Painter, Vaidehi Vijay; Sommet, Raphael; Chang, Christophe; Brunel, Valeria Di Giacomo; Gaillard, Florent; Nallatamby, Jean-Christophe; Raja, P. Vigneshwara

Experimental overview of linearity metrics using complex modulated signals 使用复调制信号的线性度指标实验概述

INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES

IF1.3

2025-10-01

PREAI

Silva Dos Santos, Jose Anderson; Alleman, Julien; Reveyrand, Tibault; Medrel, Pierre; Chang, Christophe; Sommet, Raphael; Nebus, Jean-Michel; Prigent, Michel; Nallatamby, Jean-Christophe

Two-Dimensional Materials for Raman Thermometry on Power Electronic Devices 二维材料在功率电子器件拉曼热测量中的应用

Nanomaterials 2025, Vol. 15, Page 1344

IF4.3

2025-09-01

OAAI

Mohammed Boussekri; Lucie Frogé; Raphael Sommet; Julie Cholet; Dominique Carisetti; Bruno Dlubak; Eva Desgué; Patrick Garabedian; Pierre Legagneux; Nicolas Sarazin; Mathieu Moreau; David Brunel; Pierre Seneor; Etienne Carré; Marie-Blandine Martin; Vincent Renaudin; Tony Moinet

Fe-doping starting depth impacts on static and transient characteristics of AlGaN/GaN HEMTs Fe掺杂起始深度对AlGaN/GaN HEMTs的静态和瞬态特性的影响

Micro and Nanostructures

IF3

2025-06-10

PREAI

Vaidehi Vijay Painter; Raphael Sommet; Christophe Chang; Valeria Di Giacomo Brunel; Florent Gaillard; Jean-Christophe Nallatamby; P. Vigneshwara Raja

Joint Use of Thermal Characterization and Simulation of AlGaN/GaN High-Electron Mobility Transistors in Transient and Steady State Regimes to Estimate the Hotspot Temperature 联合使用热特性表征和模拟方法，对AlGaN/GaN高电子迁移率晶体管在瞬态和稳态工况下的热点温度进行估计。

ELECTRONICS

IF2.6

2025-02-26

OAAI

Karrame, Khalil; Chang, Christophe; Nallatamby, Jean-Christophe; Colas, Maggy; Sommet, Raphael

A Microwave Modeling Oxymoron?

IEEE MICROWAVE MAGAZINE

IF2.6

2014-06-01

PREAI

Nallatamby, Jean-Christophe; Sommet, Raphael; Laurent, Sylvain; Prigent, Michel; Quere, Raymond; Jardel, Olivier

Amplitude and phase noise of magnetic tunnel junction oscillators

APPLIED PHYSICS LETTERS

IF3.6

2010-11-05

OAAI

Quinsat, M.; Gusakova, D.; Sierra, J. F.; Michel, J. P.; Houssameddine, D.; Delaet, B.; Cyrille, M. -C.; Ebels, U.; Dieny, B.; Buda-Prejbeanu, L. D.; Katine, J. A.; Mauri, D.; Zeltser, A.; Prigent, M.; Nallatamby, J. -C.; Sommet, R.

研究方向