A. Dadgar - Publications, H-index & Citations

A. Dadgar

Otto von Guericke University

48H指数

305论文数

8.6K被引数

收录论文 84

发表时间

Strain-driven amorphization in Al1-xYxN thin films and lattice-engineering stabilization illustrated by In1-xYxN 应变驱动的Al₁₋ₓYₓN薄膜中的非晶化及由In₁₋ₓYₓN例证的晶格工程稳定化

Journal of Applied Physics

IF2.5

2026-05-14

PREAI

Afshar, N.; Wolff, N.; Horich, F.; Stranak, P.; Kirste, L.; Kienle, L.; Dadgar, A.; Ambacher, O.

Oxidation and irreversible structural distortion of ScN at elevated temperatures ScN在高温下的氧化和不可逆结构畸变

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-04-09

OAAI

Gruembel, Jona; Blaesing, Juergen; Hoerich, Florian; Dadgar, Armin; Goldhahn, Ruediger

Thickness dependence of the mechanical properties of piezoelectric high-Qm nanomechanical resonators made from aluminium nitride

MATERIALS FOR QUANTUM TECHNOLOGY

IF3.6

2024-12-30

OAAI

Ciers, Anastasiia; Jung, Alexander; Ciers, Joachim; Nindito, Laurentius Radit; Pfeifer, Hannes; Dadgar, Armin; Blaesing, Juergen; Strittmatter, Andre; Wieczorek, Witlef

Nanomechanical Crystalline AlN Resonators with High Quality Factors for Quantum Optoelectromechanics

ADVANCED MATERIALS

IF26.8

2024-09-17

OAAI

Ciers, Anastasiia; Jung, Alexander; Ciers, Joachim; Nindito, Laurentius Radit; Pfeifer, Hannes; Dadgar, Armin; Strittmatter, Andre; Wieczorek, Witlef

Thermal expansion coefficient of ScN(111) thin films grown on Si(111) determined by X-ray diffraction

APPLIED PHYSICS LETTERS

IF3.6

2024-02-02

OAAI

Ciprian, L.; Mihalic, S.; Luettich, C.; Hoerich, F.; Wade, E.; Christian, B.; Dadgar, A.; Ambacher, O.

Desorption induced formation of low-density GaN quantum dots: nanoscale correlation of structural and optical properties

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2022-01-05

OAAI

Schuermann, H.; Schmidt, G.; Bertram, F.; Berger, C.; Metzner, S.; Veit, P.; Dadgar, A.; Strittmatter, A.; Christen, J.

Defect characterization of heavy-ion irradiated AlInN/GaN on Si high-electron-mobility transistors

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2021-12-20

OAAI

Challa, S. R.; Witte, H.; Schmidt, G.; Blaesing, J.; Vega, N.; Kristukat, C.; Muller, N. A.; Debray, M. E.; Christen, J.; Dadgar, A.; Strittmatter, A.

Raman tensor determination of transparent uniaxial crystals and their thin films-a-plane GaN as exemplary case

APPLIED PHYSICS LETTERS

IF3.6

2021-09-20

PREAI

Hildebrandt, R.; Sturm, C.; Wieneke, M.; Dadgar, A.; Grundmann, M.

Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies

IEEE ACCESS

IF3.6

2020-01-01

OAAI

Hajo, Ahid S.; Yilmazoglu, Oktay; Dadgar, Armin; Kueppers, Franko; Kusserow, Thomas

Accurate determination of polarization fields in (0001) c-plane InAlN/GaN heterostructures with capacitance-voltage-measurements

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2018-10-11

PREAI

Susilo, Norman; Roumeliotis, Georgios G.; Narodovitch, Michael; Witzigmann, Bernd; Rychetsky, Monir; Neugebauer, Silvio; Guttmann, Martin; Enslin, Johannes; Dadgar, Armin; Niermann, Tore; Wernicke, Tim; Strittmatter, Andre; Lehmann, Michael; Papadimitriou, Dimitra N.; Kneissl, Michael

Two charge states of the CN acceptor in GaN: Evidence from photoluminescence

PHYSICAL REVIEW B

IF3.7

2018-09-28

110

OAAI

Reshchikov, M. A.; Vorobiov, M.; Demchenko, D. O.; Ozgur, U.; Morkoc, H.; Lesnik, A.; Hoffmann, M. P.; Hoerich, F.; Dadgar, A.; Strittmatter, A.

Gallium nitride vertical power devices on foreign substrates: a review and outlook

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2018-06-12

217

PREAI

Zhang, Yuhao; Dadgar, Armin; Palacios, Tomas

Flexible Modulation of Electronic Band Structures of Wide Band Gap GaN Semiconductors Using Bioinspired, Nonbiological Helical Peptides

ADVANCED FUNCTIONAL MATERIALS

IF19

2017-11-02

PREAI

Mehlhose, Sven; Frenkel, Nataliya; Uji, Hirotaka; Hoelzel, Sara; Muentze, Gesche; Stock, Daniel; Neugebauer, Silvio; Dadgar, Armin; Abuillan, Wasim; Eickhoff, Martin; Kimura, Shunsaku; Tanaka, Motomu

Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

APPLIED PHYSICS LETTERS

IF3.6

2017-10-20

OAAI

Zhang, Yuhao; Sun, Min; Piedra, Daniel; Hennig, Jonas; Dadgar, Armin; Palacios, Tomas

Radiation-induced alloy rearrangement in InxGa1-xN

APPLIED PHYSICS LETTERS

IF3.6

2017-03-30

OAAI

Prozheeva, V.; Makkonen, I.; Cusco, R.; Artus, L.; Dadgar, A.; Plazaola, F.; Tuomisto, F.

Observation of individual stacking faults in GaN microcrystals by x-ray nanodiffraction

APPLIED PHYSICS LETTERS

IF3.6

2017-03-20

PREAI

Holy, V.; Kriegner, D.; Lesnik, A.; Blaesing, J.; Wieneke, M.; Dadgar, A.; Harcuba, P.

All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications

APPLIED PHYSICS LETTERS

IF3.6

2017-03-09

PREAI

Neugebauer, S.; Hoffmann, M. P.; Witte, H.; Blaesing, J.; Dadgar, A.; Strittmatter, A.; Niermann, T.; Narodovitch, M.; Lehmann, M.

On reduction of current leakage in GaN by carbon-doping

APPLIED PHYSICS LETTERS

IF3.6

2016-11-22

PREAI

Fariza, Aqdas; Lesnik, Andreas; Blasing, Jurgen; Hoffmann, Marc P.; Horich, Florian; Veit, Peter; Witte, Hartmut; Dadgar, Armin; Strittmatter, Andre

Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet

APPLIED PHYSICS LETTERS

IF3.6

2015-06-22

PREAI

Schmidt, Gordon; Berger, Christoph; Veit, Peter; Metzner, Sebastian; Bertram, Frank; Blaesing, Juergen; Dadgar, Armin; Strittmatter, Andre; Christen, Juergen; Callsen, Gordon; Kalinowski, Stefan; Hoffmann, Axel

High-frequency detection of cell activity of Physarum polycephalum by a planar open gate AlGaN/GaN HEMT

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2014-09-18

PREAI

Witte, Hartmut; Lippelt, Thomas; Warnke, Christian; Dadgar, Armin; Hauser, Marcus J. B.; Krost, Alois

研究方向