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S

Swarup Deb

indian institute of technology system (iit system)

H指数:15

被引数:784

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Self-Assembling Nucleopeptides Exhibiting Strong Antimicrobial Activity against Multidrug-Resistant Clinically Isolated Strains and In Vitro Wound Healing Compatibility

具有强抗菌活性的自组装核肽，对临床分离的多药耐药菌株以及体外伤口愈合的相容性

ACS APPLIED BIO MATERIALS

IF4.7

2025-03-250

PRE

Shaping exciton polarization dynamics in 2D semiconductors by tailored ultrafast pulses

通过定制超快脉冲调控二维半导体的激子极化动力学

LIGHT-SCIENCE & APPLICATIONS

IF23.4

2025-02-110

OA

Excitonic signatures of ferroelectric order in parallel-stacked MoS2

NATURE COMMUNICATIONS

IF15.7

2024-08-311

OAAI

Polarization Saturation in Multilayered Interfacial Ferroelectrics

多层界面铁电体中的极化饱和

ADVANCED MATERIALS

IF26.8

2024-05-036

PRE

Rapid Spin Depolarization in the Layered 2D Ruddlesden-Popper Perovskite (BA)(MA)PbI

IF16

2023-12-141

PRE

Spin transport in polarization induced two-dimensional electron gas channel in c-GaN nano-wedges

SCIENTIFIC REPORTS

IF3.9

2021-03-051

OAAI

Effect of Oxygen Adsorption on Electrical and Thermoelectrical Properties of Monolayer MoS2

PHYSICAL REVIEW APPLIED

IF4.4

2020-09-1110

OAAI

Defect-defect magnetic coupling in Gd doped GaN epitaxial films: A polarization selective magneto-photoluminescence study

APPLIED PHYSICS LETTERS

IF3.6

2020-07-150

PREAI

Oxidation behavior of interstitial free steel: The defining role of substrate crystallographic texture

ACTA MATERIALIA

IF9.3

2020-05-0115

PREAI

Thermally stimulated current spectroscopy of traps in CVD grown monolayer MoS2

APPLIED PHYSICS LETTERS

IF3.6

2019-07-175

PREAI

Coherent transmission of superconducting carriers through a ∼2 μm polar semiconductor

SUPERCONDUCTOR SCIENCE & TECHNOLOGY

IF4.2

2018-07-109

PREAI

Tailoring of defect luminescence in CVD grown monolayer MoS2 film

CVD生长的单层MoS2薄膜中缺陷发光的剪裁

APPLIED SURFACE SCIENCE

IF6.9

2018-07-0120

PREAI

Oxidation kinetics in pearlite: The defining role of interface crystallography

SCRIPTA MATERIALIA

IF5.6

2018-07-0113

PREAI

Photocurrent modulation under dual excitation in individual GaN nanowires

IF5.1

2018-01-014

PREAI

Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics

SCIENTIFIC REPORTS

IF3.9

2017-06-2312

OAAI

Polarization induced two dimensional confinement of carriers in wedge shaped polar semiconductors

SCIENTIFIC REPORTS

IF3.9

2016-05-2312

OAAI

Strictly monolayer large continuous MoS2 films on diverse substrates and their luminescence properties

APPLIED PHYSICS LETTERS

IF3.6

2016-01-2658

PREAI

Synchrotron based photoemission study on the band alignment and interface at ZnO/GaP hetero-junction

APPLIED PHYSICS LETTERS

IF3.6

2014-01-0614

PREAI

Band alignment and interfacial structure of ZnO/Ge heterojunction investigated by photoelectron spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

2012-11-2126

PREAI

Electronic structure of EuCu2Ge2 studied by resonant photoemission and x-ray absorption spectroscopy

PHYSICAL REVIEW B

IF3.7

2012-08-2321

PREAI