Subhabrata Dhar

indian institute of technology system (iit system)

H指数:24

被引数:2,693

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Si-Ga2O3/p-GaN epitaxial heterostructure based self-powered and visible-blind UV photodetectors with fast and electrically tunable response time

基于Si-Ga2O3/p-GaN外延异质结构的自驱动、可见光盲区紫外光电探测器，具有快速且电学可调的响应时间

Journal of Applied Physics

IF2.5

2026-04-210

PRE

Experimental demonstration of two distinct pathways of trion generation in monolayer MoS2

单层MoS2中两种不同激子生成路径的实验演示

Journal of Physics-Condensed Matter

IF2.6

2026-04-170

PRE

Spontaneous Growth of Circular Domains of MoS2 Monolayers Using the Chemical Vapor Deposition Technique

利用化学气相沉积技术实现MoS2单层材料的圆形畴区自发生长

Crystal Growth & Design

IF0

2026-04-140

PRE

CVD grown bilayer MoS2 based artificial optoelectronic synapses for arithmetic computing and image recognition applications

化学气相沉积法制备的基于双层MoS2的人工光电突触用于算术计算和图像识别应用

Journal of Physics D-Applied Physics

IF3.2

2026-03-201

PRE

Ultrafast and Broadband Self-Biased Photodetector Using CdSe/CdS Stacked Nanolayered Heterostructure

超快宽带自偏压光电探测器，采用CdSe/CdS堆叠纳米层异质结构

Advanced Materials Technologies

IF6.2

2026-03-130

PRE

Time dynamics of excitons in monolayers of transition metal dichalcogenides

过渡金属二硫属化物单层中激子的时间动力学

Semiconductor Science and Technology

IF2.1

2026-02-010

PRE

Optically active defect states and valley depolarization in monolayer MoS2 induced by high-energy electron-beam irradiation

高能电子束辐照诱导单层MoS2中的光学活性缺陷态和谷去极化

Nanoscale

IF5.1

2026-02-010

PRE

Understanding the role of environment and dielectric capping on the electrical properties of WS2 monolayers grown by chemical vapor deposition technique

理解环境及介电包覆对化学气相沉积法制备的WS2单层材料电学性质的影响

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-11-070

PRE

Electrically Tunable Persistent Photoconductivity Effect in Epitaxial NiO/ZnO Heterojunctions for Artificial Synaptic Devices and Neuromorphic Computing Applications

电学可调的持久光电导效应在 epitaxial NiO/ZnO 异质结中用于人工突触器件和神经形态计算应用

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2025-05-140

PRE

Controlled growth of millimeter-size continuous bilayer MoS2 films on SiO2 substrates by chemical vapour deposition technique

SURFACES AND INTERFACES

IF6.3

2025-02-010

PRE

Influence of strain and point defects on the electronic structure and related properties of (111)NiO epitaxial films

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-12-171

PRE

Solving the puzzle of higher photoluminescence yield at the edges of MoS2 monolayers grown by chemical vapor deposition

APPLIED PHYSICS LETTERS

IF3.6

2024-11-180

PRE

(0001)n-ZnO/(0001)p-GaN Heterostructure Based Self-Driven Fast UV Photodetectors and the Role of the Polarization Induced Interfacial 2D Electron Gas Channel

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-08-273

PRE

Epitaxial growth of excitonic single crystals and heterostructures: Oxides and nitrides

MRS BULLETIN

IF4.9

2024-08-061

PRE

PLD-Grown Semi-Insulating Ga2O3 Thin Film-Based Optoelectronic Artificial Synaptic Devices for Neuromorphic Computing Applications

用于神经形态计算应用的基于PLD生长的半绝缘Ga2O3薄膜的光电人工突触器件

ADVANCED MATERIALS TECHNOLOGIES

IF6.2

2024-07-031

PRE

Vapor-Liquid-Solid-Mediated Layer-by-Layer Growth of Stepped-Wedge-Shaped WS2 Microribbons Using the Chemical Vapor Deposition Technique

CRYSTAL GROWTH & DESIGN

IF3.4

2024-02-053

PRE

Novel Nano-Electroplating-Based Plasmonic Platform for Giant Emission Enhancement in Monolayer Semiconductors

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-12-043

PRE

Study of lithium incorporation in (111) NiO epitaxial layers grown on c-sapphire substrates using the pulsed laser deposition technique

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2023-05-193

PRE

Spatially indirect interfacial excitons in n+-ZnO/p-GaN heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2023-05-155

PRE

Influence of defects on the valley polarization properties of monolayer MoS2 grown by chemical vapor deposition

PHYSICAL REVIEW B

IF3.7

2023-03-3012

Subhabrata Dhar

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教育背景

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