Shenyuan Yang

chinese academy of sciences

H指数:22

被引数:2,267

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Engineering SnSe Isolated State Steep-Slope MOSFETs for High-Performance Applications

构建基于SnSe孤立态陡峭亚阈值摆幅MOSFET以实现高性能应用

ADVANCED ELECTRONIC MATERIALS

IF5.3

2025-11-010

OAAI

Electric field controlled magnetism and hole doping in monolayer FeSe on a polar NaCl substrate

PHYSICAL REVIEW B

IF3.7

2025-03-240

PRE

Improving the Performance of Arsenene Nanoribbon Gate-All-Around Tunnel Field-Effect Transistors Using H Defects

使用H缺陷改善Arsenene纳米带栅极全包围隧道场效应晶体管的性能

NANOMATERIALS

IF4.3

2024-12-060

OAAI

Lateral graphene/MoS2 heterostructures for steep-slope Dirac-source field-effect transistors

PHYSICAL REVIEW B

IF3.7

2024-09-050

PRE

Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration

单晶GaN在非晶SiO2/Si(100) 上的准范德华外延用于单片光电集成

ADVANCED SCIENCE

IF14.1

2024-03-222

OAAI

Construction of 2D/2D Ti 3 C 2 T x MXene/CdS heterojunction with photothermal effect for efficient photocatalytic hydrogen production

JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY

IF14.3

2024-02-0128

PRE

Wafer-Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light-Emitting Diode

用于柔性发光二极管的六方氮化硼支持的晶圆级可转移GaN

SMALL

IF12.1

2023-10-069

PRE

Quasi-van der Waals Epitaxy of a Stress-Released AlN Film on Thermally Annealed Hexagonal BN for Deep Ultraviolet Light-Emitting Diodes

用于深紫外发光二极管的热退火六边形BN上的应力释放AlN膜的准范德华外延

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-05-038

PRE

Atomic Mechanism of Strain Alleviation and Dislocation Reduction in Highly Mismatched Remote Heteroepitaxy Using a Graphene Interlayer

NANO LETTERS

IF9.1

2022-04-1115

PRE

Direct growth of wafer-scale highly oriented graphene on sapphire

SCIENCE ADVANCES

IF12.5

2021-11-1960

OAAI

A Linear Relationship between the Charge Transfer Amount and Level Alignment in Molecule/Two-Dimensional Adsorption Systems

ACS OMEGA

IF4.3

2020-10-0916

OAAI

Flexible graphene-assisted van der Waals epitaxy growth of crack -free AlN epilayer on SiC by lattice engineering

APPLIED SURFACE SCIENCE

IF6.9

2020-08-0119

PREAI

Quasi-2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light-Emitting Diodes

ADVANCED SCIENCE

IF14.1

2020-06-2346

OAAI

Direct Growth of Nanopatterned Graphene on Sapphire and Its Application in Light Emitting Diodes

ADVANCED FUNCTIONAL MATERIALS

IF19

2020-06-1137

PREAI

High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors

NANOSCALE

IF5.1

2020-01-0168

PREAI

Atomic mechanism of strong interactions at the graphene/sapphire interface

NATURE COMMUNICATIONS

IF15.7

2019-11-0135

OAAI

Large Band Edge Tunability in Colloidal Nanoplatelets

胶体纳米片中的大能带边缘可调性

NANO LETTERS

IF9.1

2019-09-2320

PREAI

Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene

ADVANCED MATERIALS

IF26.8

2019-04-16142

OAAI

Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

APPLIED PHYSICS LETTERS

IF3.6

2019-03-0798

OAAI

High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer

通过直接生长的石墨烯缓冲层实现的高亮度蓝色发光二极管

ADVANCED MATERIALS

IF26.8

2018-06-08109

PREAI

Shenyuan Yang

个人简介

教育背景

工作经历

荣誉奖项

研究方向