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J

J. P. Bergman

Linkoping University

38H指数
252论文数
5.1K被引数
收录论文 50
发表时间
The role of boron related defects in limiting charge carrier lifetime in 4H-SiC epitaxial layers
err2023-03-17
err10
errOAAI
errGhezellou, Misagh; Kumar, Piyush; Bathen, Marianne E. E.; Karsthof, Robert; Sveinbjornsson, Einar O.; Grossner, Ulrike; Bergman, J. Peder; Vines, Lasse; Ul-Hassan, Jawad
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Carrier Lifetime Controlling Defects Z1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC
err2014-06-30
err16
errOAAI
errBooker, Ian D.; Ul Hassan, Jawad; Lilja, Louise; Beyer, Franziska C.; Karhu, Robin; Bergman, J. Peder; Danielsson, Orjan; Kordina, Olof; Sveinbjornsson, Einar O.; Janzen, Erik
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Delay and distortion of slow light pulses by excitons in ZnO
err2011-08-01
err18
errOAAI
errShubina, T. V.; Glazov, M. M.; Gippius, N. A.; Toropov, A. A.; Lagarde, D.; Disseix, P.; Leymarie, J.; Gil, B.; Pozina, G.; Bergman, J. P.; Monemar, B.
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Transient photoluminescence of shallow donor bound excitons in GaN
err2010-12-06
err39
errOAAI
errMonemar, B.; Paskov, P. P.; Bergman, J. P.; Pozina, G.; Toropov, A. A.; Shubina, T. V.; Malinauskas, T.; Usui, A.
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Polarization-resolved phonon-assisted optical transitions of bound excitons in wurtzite GaN
err2008-05-02
err7
PREAI
errToropov, A. A.; Kitaev, Yu. E.; Shubina, T. V.; Paskov, P. P.; Bergman, J. P.; Monemar, B.; Usui, A.
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Recombination dynamics of free and bound excitons in bulk GaN体GaN中自由和束缚激子的复合动力学
err2008-05-01
err4
PREAI
errMonemar, B.; Paskov, P. P.; Bergman, J. P.; Toropov, A. A.; Shubina, T. V.; Usui, A.
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Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates
err2008-04-14
err15
errOAAI
errPozina, G.; Hemmingsson, C.; Paskov, P. P.; Bergman, J. P.; Monemar, B.; Kawashima, T.; Amano, H.; Akasaki, I.; Usui, A.
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Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
err2007-11-26
err37
PREAI
errPozina, G.; Paskov, P. P.; Bergman, J. P.; Hemmingsson, C.; Hultman, L.; Monemar, B.; Amano, H.; Akasaki, I.; Usui, A.
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Recombination dynamics and lasing in ZnO/ZnMgO single quantum well structures
err2007-11-13
err22
PREAI
errShubina, T. V.; Toropov, A. A.; Lublinskaya, O. G.; Kop'ev, P. S.; Ivanov, S. V.; El-Shaer, A.; Al-Suleiman, M.; Bakin, A.; Waag, A.; Voinilovich, A.; Lutsenko, E. V.; Yablonskii, G. P.; Bergman, J. P.; Pozina, G.; Monemar, B.
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Mechanism for radiative recombination in ZnCdO alloys
err2007-06-26
err31
PREAI
errBuyanova, I. A.; Bergman, J. P.; Pozina, G.; Chen, W. M.; Rawal, S.; Norton, D. P.; Pearton, S. J.; Osinsky, A.; Dong, J. W.
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Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy
err2007-05-29
err15
PREAI
errPozina, G.; Hemmingsson, C.; Bergman, J. P.; Trinh, D.; Hultman, L.; Monemar, B.
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Coexistence of type-I and type-II band lineups in Cd(Te,Se)/ZnSe quantum-dot structures
err2006-09-19
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errOAAI
errToropov, A. A.; Sedova, I. V.; Lyublinskaya, O. G.; Sorokin, S. V.; Sitnikova, A. A.; Ivanov, S. V.; Bergman, J. P.; Monemar, B.; Donatini, F.; Dang, Le Si
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Density-dependent dynamics of exciton magnetic polarons in ZnMnSe/ZnSSe type-II quantum wells
err2006-06-28
err10
PREAI
errToropov, A. A.; Terent'ev, Ya. V.; Sorokin, S. V.; Ivanov, S. V.; Koyama, T.; Nishibayashi, K.; Murayama, A.; Oka, Y.; Bergman, J. P.; Buyanova, I. A.; Chen, W. M.; Monemar, B.
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Optical signatures of dopants in GaN
err2006-02-01
err11
PREAI
errMonemar, B.; Paskov, P. P.; Bergman, J. P.; Toropov, A. A.; Shubina, T. V.; Figge, S.; Paskova, T.; Hommel, D.; Usui, A.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.
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Radiative recombination of GaInNP alloys lattice matched to GaAs
err2006-01-05
err10
errOAAI
errIzadifard, M; Bergman, JP; Chen, WM; Buyanova, IA; Hong, YG; Tu, CW
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Observation of recombination enhanced defect annealing in 4H-SiC -: art. no. 091903
err2005-02-23
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PREAI
errStorasta, L; Carlsson, FHC; Bergman, JP; Janzén, E
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Evaluation of optical quality and defect properties of GaNxP1-x alloys lattice matched to Si
err2004-12-27
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PREAI
errIzadifard, M; Bergman, JP; Vorona, I; Chen, WM; Buyanova, IA; Utsumi, A; Furukawa, Y; Moon, S; Wakahara, A; Yonezu, H
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Photoluminescence study of Si-doped GaN/Al0.07Ga0.93N multiple quantum wells with different dopant position
err2004-06-21
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PREAI
errHaratizadeh, H; Monemar, B; Paskov, PP; Bergman, JP; Sernelius, BE; Holtz, PO; Iwaya, M; Kamiyama, S; Amano, H; Akasaki, I
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Photoluminescence upconversion in 4H-SiC
err2002-09-30
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PREAI
errWagner, M; Ivanov, IG; Storasta, L; Bergman, JP; Magnusson, B; Chen, WM; Janzén, E
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